Simon Ruffell

20130285177, Oct 31, 2013

Apr 29, 2013

13/872903

Steven Sherman - Newton MA, US
John J. Hautala - Beverly MA, US
Simon Ruffell - Beverly MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 43/02
H01L 43/12

257421, 438 3

In one embodiment a magnetic memory includes a memory device base and a plurality of memory cells disposed on the memory cell base, where each memory cell includes a layer stack comprising a plurality of magnetic and electrically conductive layers arranged in a stack of layers common to each other memory cell. The magnetic memory further includes an implanted matrix disposed between the memory cells and surrounding each memory cell, where the implanted matrix includes component material of the layer stack of each memory cell inter mixed with implanted species, where the implanted matrix comprises a non-conducting material and a non-magnetic material, wherein each memory cell is electrically and magnetically isolated from each other memory cell.

20130288394, Oct 31, 2013

Apr 29, 2013

13/872888

Steven Sherman - Newton MA, US
John J. Hautala - Beverly MA, US
Simon Ruffell - Beverly MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 43/12

438 3

A method of forming a magnetic memory includes providing a layer stack comprising a plurality of magnetic layers and a plurality of electrically conducting layers on a base portion of a substrate; forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, the first mask feature and second mask feature defining an exposed region of the layer stack in portions of the layer stack therebetween; and directing ions towards exposed the region of the layer stack in an ion exposure that is effective to magnetically isolate the first protected region from the second protected region and to electrically isolate the first protected region from the second protected region without removal of the exposed region of the layer stack.

20120289031, Nov 15, 2012

May 11, 2012

13/470015

Morgan D. EVANS - Manchester MA, US
Simon Ruffell - Beverly MA, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

H01L 21/265

438478, 257E21334

A workpiece is implanted to affect growth of a compound semiconductor, such as GaN. Implanted regions of a workpiece increase, reduce, or prevent growth of this compound semiconductor. Combinations of implants may be performed to cause increased growth in certain regions of the workpiece, such as between regions where growth is reduced. Growth also may be reduced or prevented at the periphery of the workpiece.

20220384156, Dec 1, 2022

May 25, 2021

17/329883

- Santa Clara CA, US
Simon Ruffell - South Hamilton MA, US
Kevin R. Anglin - Somerville MA, US
Tyler Rockwell - Wakefield MA, US
Christopher Campbell - Newburyport MA, US
Kevin M. Daniels - Lynnfield MA, US
Richard J. Hertel - Boxford MA, US
Kevin T. Ryan - Wilmington MA, US

Applied Materials, Inc. - Santa Clara CA

H01J 37/32

A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

20220246397, Aug 4, 2022

Feb 4, 2021

17/167416

- Santa Clara CA, US
Simon Ruffell - Hamilton MA, US
Kevin Verrier - Hampton NH, US

H01J 37/305
H01J 37/304
H01J 37/32

A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.

20210375626, Dec 2, 2021

Aug 17, 2021

17/404438

- Gloucester MA, US
Simon Ruffell - South Hamilton MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/033
H01L 21/67
H01J 37/32
H01L 21/311

A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in a first exposure to the cavity, wherein after the first exposure the cavity has a second length, greater than the first length; directing normal ions in a second exposure to the cavity, wherein the cavity retains the second length after the second exposure; and directing second angled ions to the cavity is a third exposure, subsequent to the second exposure, wherein the cavity has a third length, greater than the second length, after the third exposure.

20210343550, Nov 4, 2021

May 4, 2020

16/865860

- Santa Clara CA, US
Simon Ruffell - Hamilton MA, US

H01L 21/673
H01L 21/67
H01L 21/02

A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

20200194271, Jun 18, 2020

Nov 7, 2019

16/676857

- Santa Clara CA, US
Simon Ruffell - South Hamilton MA, US

APPLIED Materials, Inc. - Santa Clara CA

H01L 21/3065
H01L 21/02
H01L 21/67
H01J 37/32
H01L 21/311

A method of patterning a substrate. The method may include providing a cavity in a layer, disposed on the substrate, the cavity having a first length along a first direction and a first width along a second direction, perpendicular to the first direction, and wherein the layer has a first height along a third direction, perpendicular to the first direction and the second direction. The method may include depositing a sacrificial layer over the cavity in a first deposition procedure; and directing angled ions to the cavity in a first exposure, wherein the cavity is etched, and wherein after the first exposure, the cavity has a second length along the first direction, greater than the first length, and wherein the cavity has a second width along the second direction, no greater than the first width.