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Simon S Liao

from Union City, CA
Age ~70
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Also known as:
Simon Shobin Liao, Simon Jenny Liao, I Lio Simon
Phone and address:
32441 Darlene Way, Union City, CA 94587
(510) 565-2228
Related to:
Junxi Zhou, 43Xiao Wang, 55Ben W WangCheresa Tran, 44Tang Z Han
Connected to:
Allen H Liao, 70Benedict S Liao, 84Celina S Liao, 30Chong Liao, 79Christy Liao, 38Chunyuan Liao, 48Danny J Liao, 44Edward R Liao, 51Elena T Liao, 42Elyse A Liao, 42

Simon Liao Phones & Addresses

  • 32441 Darlene Way, Union City, CA 94587 (510) 565-2228
  • Hayward, CA
  • Alameda, CA

Resumes

Resumes

Simon Liao Photo 1

Mechenical Detailer And Drafter

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Location:
San Francisco, CA
Industry:
Mechanical Or Industrial Engineering
Work:
Beahm Designs
Mechenical Detailer and Drafter
Cobham 2005 - 2013
Drafer Ii
Bizlink Technology 2001 - 2005
Engineeing Technician and Drafter
Education:
Heald College 1999 - 1999
Associates Chabot College 1997 - 1997
Skills:
Cad
Autocad
Solidworks
Adobe Acrobat
Microsoft Office
Modeling
Photoshop
Sheet Metal
Manufacturing
Gd&T
Pore
Orcad
Pointman Database
Iso
Design For Manufacturing
Ptc Creo
Engineering
Pro Engineer
Software Documentation
Lean Manufacturing
Eco Processing
Design Conception
Design Cad Process
Interests:
Photography
Ping Pong
Swimming
Simon Liao Photo 2

Simon Liao

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Publications

Us Patents

Spin Valve Structure Design With Laminated Free Layer

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US Patent:
6392853, May 21, 2002
Filed:
Jan 24, 2000
Appl. No.:
09/489973
Inventors:
Min Li - Fremont CA
Simon H. Liao - Fremont CA
Cheng T. Horng - San Jose CA
Youfeng Zheng - Sunnyvale CA
Ru-Ying Tong - San Jose CA
Kochan Ju - Fremont CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 539
US Classification:
36032412, 360314, 428692, 428332, 428611
Abstract:
The giant magnetoresistance (GMR) effect includes a contribution that is due to anisotropic magnetoresistance (AMR). Unfortunately the AMR effect tends to degrade the peak-to-peak signal asymmetry. Additionally, a high AMR/GMR ratio causes a larger signal asymmetry variation. It is therefor desirable to reduce both the AMR contribution as well as the AMR/GMR ratio. This has been achieved by modifying the free layer through the insertion of an extra layer of a highly resistive or insulating material at approximately mid thickness level. This layer is from 3 to 15 Angstroms thick and serves to reduce the Anisotropic Magneto-resistance contribution to the total magneto-resistance of the device. This reduces the GMR contribution only slightly but cuts the AMR/GMR ratio in half, thereby improving cross-track asymmetry and signal linearity.

Ruthenium Bias Compensation Layer For Spin Valve Head And Process Of Manufacturing

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US Patent:
6396671, May 28, 2002
Filed:
Mar 15, 2000
Appl. No.:
09/525670
Inventors:
Cheng T. Horng - San Jose CA
Kochan Ju - Fremont CA
Min Li - Fremont CA
Simon H. Liao - Fremont CA
Ku-Ying Tong - San Jose CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 539
US Classification:
3603241, 2960314, 36032412
Abstract:
A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.

Bottom Spin Valves With Continuous Spacer Exchange (Or Hard) Bias

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US Patent:
6466418, Oct 15, 2002
Filed:
Feb 11, 2000
Appl. No.:
09/502035
Inventors:
Cheng T. Horng - San Jose CA
Min Li - Fremont CA
Simon H. Liao - Fremont CA
Ru-Ying Tong - San Jose CA
Chyu Jiuh Torng - Pleasanton CA
Rongfu Xiao - Fremont CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 539
US Classification:
36032412, 2960314
Abstract:
A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias and a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element fabricated according to that method. To practice the method, there is provided a substrate upon which is formed a seed layer, upon which is formed an antiferromagnetic pinning layer, upon which is formed a ferromagnetic pinned layer, upon which is formed a non-magnetic spacer layer, upon which is formed a ferromagnetic free layer, upon which is formed a specularly reflecting and capping layer. The width of the sensor element is defined by a pair of conducting leads aligned upon a pair of continuous spacer exchange hard bias layers.

Method For Forming A Bottom Spin Valve Magnetoresistive Sensor Element

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US Patent:
6581272, Jun 24, 2003
Filed:
Jan 4, 2002
Appl. No.:
10/037812
Inventors:
Min Li - Fremont CA
Simon H. Liao - Fremont CA
Masashi Sano - Nagano, JP
Kiyoshi Noguchi - Nagano, JP
Kochan Ju - Fremont CA
Cheng T. Horng - San Jose CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 5127
US Classification:
2960314, 2960308, 2960315, 36032411, 36032412, 427127, 427130, 427131
Abstract:
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.

Anisotropic Magnetoresistive (Mr) Sensor Element With Enhanced Magnetoresistive (Mr) Coefficient

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US Patent:
6590751, Jul 8, 2003
Filed:
Sep 30, 1999
Appl. No.:
09/408700
Inventors:
Cheng T. Horng - San Jose CA
Rongfu Xiao - Fremont CA
Ru-Ying Tong - San Jose CA
Kochan Ju - Fremont CA
Simon H. Liao - Fremont CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 5127
US Classification:
360325
Abstract:
A method for forming an anisotropic magnetoresistive (MR) sensor element, and the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a magnetoresistive (MR) layer. The method contemplates the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. The nickel oxide material layer provides the anisotropic magnetoresistive (MR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.

Canted Adjacent Layer Stabilized Sv Heads

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US Patent:
6594124, Jul 15, 2003
Filed:
Nov 6, 2001
Appl. No.:
09/993402
Inventors:
You Feng Zheng - San Jose CA
Kochan Ju - Fremont CA
Simon Liao - Fremont CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 5127
US Classification:
36032412, 360328, 428694 EC, 428694 TM, 148103
Abstract:
An improved stabilization scheme for a GMR read head is described. Two important changes relative to prior art designs have been introduced. Instead of biasing by means of a permanent magnet or through exchange coupling with an antiferromagnetic layer, the magnetostatic field emanating from a nearby, but not contiguous, layer is used. Additionally, to obtain optimum stability with this scheme the bias, instead of running parallel to the easy axis of the free layer, is canted away from it towards the direction of the demagnetizing field of the pinned layer. A process for the manufacture of the structure is also described.

Synthetic Anti-Parallel Spin Valve, Having Improved Robustness, And Process To Manufacture It

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US Patent:
6620530, Sep 16, 2003
Filed:
Jan 26, 2001
Appl. No.:
09/769813
Inventors:
Min Li - Fremont CA
Cheng T. Horng - San Jose CA
Ru Ying Tong - San Jose CA
Simon H. Liao - Fremont CA
Kochan Ju - Fremont CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 560
US Classification:
428692, 428694 TM, 428694 TS, 428900, 427 58, 427123, 4271263, 4271264, 427128, 427130, 427131, 427132, 427404, 4274191, 4274192, 4273761, 360110, 360113, 360122, 360124, 360128, 338 32 R, 324252
Abstract:
A spin valve structure and a method for manufacturing it are described. The spin valve uses a modified pinned layer that consists of two cobalt iron layers separated by a layer of either ruthenium, iridium, or rhodium. A key feature of the invention is that this spacer layer is significantly thinner (typically 3-4 Angstroms) than similar layers in prior art structures. Normally, when such thin spacer layers are used, annealing fields in excess of 20,000 Oersted are needed to cause the two cobalt iron layers to become antiparallel. The present invention, however, teaches that much lower annealing fields (spanning a limited range) may be used with equal effect. The result is that a very high internal pinning field is created giving devices of this type greater pinned layer stability and reduced pinning reversal. These devices also exhibits a minimum amount of open looping in their hysteresis curves.

Synthetic Anti-Parallel/Parallel/Pinned Layer Spin Valve

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US Patent:
6630248, Oct 7, 2003
Filed:
Jan 19, 2001
Appl. No.:
09/764231
Inventors:
Cheng T. Horng - San Jose CA
Min Li - Fremont CA
Ru-Ying Tong - San Jose CA
Simon H. Liao - Fremont CA
Kochan Ju - Fremont CA
Assignee:
Headway Technologies, Inc. - Milpitas CA
International Classification:
G11B 539
US Classification:
428611, 428637, 428663, 428668, 428669, 428678, 428216, 428692, 36032411, 36032412
Abstract:
A spin valve structure is described that has greater pinned layer robustness than is found in spin valves of the existing known art, making it well suited for use in high density recording. This has been achieved by a using a modified pinned layer that is a laminate of five layersâa first layer of cobalt-iron, a layer of ruthenium, a second layer of cobalt-iron, a layer of nickel-chromium, and a third layer of cobalt-iron. The second layer of cobalt-iron should be about twice the thickness of the third cobalt-iron layer. The sum of the second and third cobalt-iron layer thicknesses may be greater or smaller than the thickness of the first cobalt-iron layer. A process for manufacturing the structure is also described.
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Simon S Liao from Union City, CA, age ~70 Get Report