Search

Shuo D Chen

from Goleta, CA
Age ~43
Get Report
Also known as:
Shuodan D Chen, Dan Chen Shuo
Related to:
Wen Mi Chen, 46Lesley C Mccool, 46
Connected to:
Abre G Chen, 65Adele Chen, 52Adeline K Chen, 39Ai M Chen, 60Ai C Chen, 79Aiping Chen, 63Alen Y Chen, 68Alma Chen, 29Amanda Chen, 44Amanda T Chen, 63

Shuo Chen Phones & Addresses

  • Goleta, CA
  • Duluth, GA
  • Cambridge, MA
  • Johns Creek, GA

Resumes

Resumes

Shuo Chen Photo 1

Shuo Chen

View page
Shuo Chen Photo 2

Shuo Chen

View page
Shuo Chen Photo 3

Student At Emory University

View page
Location:
Greater Atlanta Area
Work:
Vanderbilt University Medical Center 2005 - 2008
Biostatistician
Education:
Emory University 2007 - 2011
Shuo Chen Photo 4

Shuo Chen

View page
Location:
United States
Shuo Chen Photo 5

Shuo Chen

View page
Location:
United States

Publications

Us Patents

Metal Deposition Using Seed Layers

View page
US Patent:
8580100, Nov 12, 2013
Filed:
Feb 24, 2011
Appl. No.:
12/932372
Inventors:
Hsien-Ping Feng - Watertown MA, US
Gang Chen - Carlisle MA, US
Yu Bo - Chesnut Hill MA, US
Zhifeng Ren - Newton MA, US
Shuo Chen - Newton MA, US
Bed Poudel - Newtonville MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
The Trustees of Boston College - Chestnutt Hill MA
GMZ Energy, Inc. - Waltham MA
International Classification:
C25D 5/02
C25D 5/54
US Classification:
205135, 205162, 205118
Abstract:
Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

Synthesis Of Boron Carbide Nanoparticles

View page
US Patent:
20060057050, Mar 16, 2006
Filed:
Mar 24, 2005
Appl. No.:
11/088527
Inventors:
Zhifeng Ren - Newton MA, US
Jian Wen - Urbana IL, US
Jing Lao - Clifton Park NY, US
Wenzhi Li - Palmetto Bay FL, US
Shuo Chen - Brighton MA, US
International Classification:
C01B 31/36
US Classification:
423291000
Abstract:
The present invention relates generally to reinforced carbon nanotubes, and more particularly to reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs to reinforce the CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing carbide reinforced CNTs.

Half-Heusler Alloys With Enhanced Figure Of Merit And Methods Of Making

View page
US Patent:
20130175484, Jul 11, 2013
Filed:
Dec 19, 2012
Appl. No.:
13/719966
Inventors:
GMZ Energy, Inc. - Waltham MA, US
Giri Joshi - Brighton MA, US
Shuo Chen - Newton MA, US
Gang Chen - Carlisle MA, US
Bed Poudel - Brighton MA, US
James Christopher Caylor - Melrose MA, US
Assignee:
TRUSTEES OF BOSTON COLLEGE - Chestnut Hill MA
GMZ ENERGY, INC. - Waltham MA
International Classification:
H01B 1/02
US Classification:
252513
Abstract:
Thermoelectric materials and methods of making thermoelectric materials having a nanometer mean grain size less than 1 micron. The method includes combining and arc melting constituent elements of the thermoelectric material to form a liquid alloy of the thermoelectric material and casting the liquid alloy of the thermoelectric material to form a solid casting of the thermoelectric material. The method also includes ball milling the solid casting of the thermoelectric material into nanometer mean size particles and sintering the nanometer size particles to form the thermoelectric material having nanometer scale mean grain size.

Methods Of Synthesizing Thermoelectric Materials

View page
US Patent:
20130234375, Sep 12, 2013
Filed:
Mar 7, 2013
Appl. No.:
13/788932
Inventors:
Zhifeng Ren - Newton MA, US
Shuo Chen - Newton MA, US
Wei-Shu Liu - Brighton MA, US
Hengzhi Wang - West Roxbury MA, US
Hui Wang - Brookline MA, US
Bo Yu - West Roxbury MA, US
Gang Chen - Carlisle MA, US
International Classification:
H01L 35/34
US Classification:
264614
Abstract:
Methods for synthesis of thermoelectric materials are disclosed. In some embodiments, a method of fabricating a thermoelectric material includes generating a plurality of nanoparticles from a starting material comprising one or more chalcogens and one or more transition metals; and consolidating the nanoparticles under elevated pressure and temperature, wherein the nanoparticles are heated and cooled at a controlled rate.

Stepped Spring Contact

View page
US Patent:
20150072543, Mar 12, 2015
Filed:
Aug 25, 2014
Appl. No.:
14/467869
Inventors:
- Attleboro MA, US
Giovanni Fraone - Mansfield MA, US
Hedzer Wiersma - Deventer, NL
Andrew LeGendre - Dedham MA, US
Raymond E. Mandeville - Cumberland RI, US
Shuo Robert Chen - Providence RI, US
Ted Medeiros - North Smithfield RI, US
Matt Nelson - Watertown MA, US
International Classification:
H01R 4/48
H01R 12/70
US Classification:
439 81
Abstract:
In an embodiment, a stepped spring contact may have a first portion, a transition portion, and a second portion. The first portion may include a plurality of windings whose pitch may vary. The second portion may include a plurality of windings that are closely wound. A pitch of the windings contained in the second portion may be, for example, constant. The transition portion may include a winding that may make mechanical and electrical contact with a first electrical conductor (e.g., a pad contained on a printed circuit board (PCB)). The first portion may include a tip. The tip may be, for example, flat shaped or conically shaped. The tip may make electrical contact with a second electrical conductor (e.g., a terminal connector). In operation, the stepped spring contact may provide electrical continuity between the first electrical conductor and the second electrical conductor.
Control profile
Shuo D Chen from Goleta, CA, age ~43 Get Report