Shu D Satoh

6878946, Apr 12, 2005

Sep 30, 2002

10/259827

Marvin Farley - Ipswich MA, US
Takao Sakase - Rowley MA, US
Shu Satoh - Byfield MA, US
Geoffrey Ryding - Manchester MA, US
Peter Rose - Rockport MA, US
Christos Christou - West Suxex, GB

Applied Materials, Inc. - Santa Clara CA

H01J037/08

250427, 250426, 250424

An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly P for subsequent acceleration for high energy implantation.

6908836, Jun 21, 2005

Sep 23, 2002

10/251780

Adrian Murrell - West Sussex, GB
Bernard Harrison - West Sussex, GB
Peter Edwards - West Sussex, GB
Peter Kindersley - West Sussex, GB
Takao Sakase - Rowley MA, US
Marvin Farley - Ipswich MA, US
Shu Satoh - Byfield MA, US
Geoffrey Ryding - Manchester MA, US

Applied Materials, Inc. - Santa Clara CA

H01L021/26

438535, 438511

An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

6998626, Feb 14, 2006

Dec 20, 2004

11/015740

Geoffrey Ryding - Manchester MA, US
Shu Satoh - Byfield MA, US

Applied Materials, Inc. - Santa Clara CA

H01J 37/317
H01J 49/10

25049221, 250423 R, 250424, 250425, 250426, 31511181, 31511101, 31523141

This invention relates to a method of producing a dopant gas species containing a required dopant element for implanting in a target and to an ion source for implementing such a method. In particular, although not exclusively, this invention relates to producing dopant ions for implanting in semiconductor wafers using an ion implanter. The present invention provides a method of producing a dopant gas species containing a required dopant element for implanting in a target, the method comprising: exposing a source mass of the element to gaseous bromine and element react to form a reactant product, and ionising the reactant product to produce ions of the dopant gas species.

7049210, May 23, 2006

Jan 12, 2004

10/754502

Adrian Murrell - Horsham, GB
Bernard Harrison - Copthorne, GB
Peter Ivor Tudor Edwards - Kingsfold, GB
Peter Kindersley - Horsham, GB
Craig Lowrie - West Grinstead, GB
Peter Michael Banks - Horsham, GB
Takao Sakase - Rowley MA, US
Marvin Farley - Ipswich MA, US
Shu Satoh - Byfield MA, US
Geoffrey Ryding - Manchester MA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/26

438535

An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

7235797, Jun 26, 2007

May 24, 2005

11/135666

Adrian Murrell - West Sussex, GB
Bernard Harrison - West Sussex, GB
Peter Edwards - West Sussex, GB
Peter Kindersley - West Sussex, GB
Takao Sakase - Rowley MA, US
Marvin Farley - Ipswich MA, US
Shu Satoh - Byfield MA, US
Geoffrey Ryding - Manchester MA, US

Applied Materials, Inc. - Santa Clara CA

H01J 37/317
H01J 37/30

25049221, 2504911, 2504922, 250397, 250398

An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

7253424, Aug 7, 2007

May 4, 2006

11/417027

Adrian Murrell - West Sussex, GB
Bernard Harrison - West Sussex, GB
Peter Ivor Tudor Edwards - West Sussex, GB
Peter Kindersley - West Sussex, GB
Craig Lowrie - West Sussex, GB
Peter Michael Banks - West Sussex, GB
Takao Sakase - Rowley MA, US
Marvin Farley - Ipswich MA, US
Shu Satoh - Byfield MA, US
Geoffrey Ryding - Manchester MA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/26
G21K 5/10

25049221, 2504922, 25049222, 25049223, 25049224, 438535

An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

7282427, Oct 16, 2007

May 4, 2006

11/417028

Adrian Murrell - West Sussex, GB
Bernard Harrison - West Sussex, GB
Peter Ivor Tudor Edwards - West Sussex, GB
Peter Kindersley - West Sussex, GB
Craig Lowrie - West Sussex, GB
Peter Michael Banks - West Sussex, GB
Takao Sakase - Rowley MA, US
Marvin Farley - Ipswich MA, US
Shu Satoh - Byfield MA, US
Geoffrey Ryding - Manchester MA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/26
H01L 21/04

438535, 438511

An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

7528390, May 5, 2009

Sep 29, 2006

11/540897

Shu Satoh - Byfield MA, US

Axcelis Technologies, Inc. - Beverly MA

H01J 37/08
H01J 37/317
H01J 37/302

25049221, 2504922, 2504923, 250396 R

An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.