Search

Shinzo O Onishi

from Seminole, FL
Age ~81
Get Report
Also known as:
Shinzo S Onishi, Shinzo M Onishi
Phone and address:
13090 82Nd Ave, Largo, FL 33776
(727) 397-9049
Related to:
Kazumitsu Onishi
Connected to:
Aya Onishi, 52Harry A Onishi, 89Janice M Onishi, 75Katherine S Onishi, 40Kensuke Onishi, 52Johnny Onisko, 48Maria A Onisko, 37Ryan Onisko, 35Karimu R Onissema, 63Libby D Oniszko, 38

Shinzo Onishi Phones & Addresses

  • 13090 82Nd Ave, Seminole, FL 33776 (727) 397-9049
  • Largo, FL
  • Blacksburg, VA
  • 1484 Seagull Dr, Palm Harbor, FL 34685 (727) 789-5240
  • Lebanon, NH

Work

Company: Crt llc Position: Chief engineer

Education

School / High School: Kyoto University 1978 Specialities: Doctorate of Philosophy in Electronics Engineering

Resumes

Resumes

Shinzo Onishi Photo 1

Part Time Consultant

View page
Location:
Omak, WA
Industry:
Research
Work:
Sri International
Part Time Consultant
Usf St. Petersburg 2002 - 2007
Senior Process Engineer
Unaxis/Plasma Therm 1997 - 2002
Senior Process Engineer
Education:
Kyoto University 1974 - 1978
Doctorates, Doctor of Philosophy, Electronics, Electronics Engineering, Philosophy Kyoto University 1972 - 1974
Masters, Electronics Engineering, Electronics
Skills:
Analysis
Research
Project Management
Strategic Planning
Program Management
Data Analysis
Leadership
Training
Change Management
Languages:
Japanese
Shinzo Onishi Photo 2

Engineer

View page
Location:
7935 114Th Ave north, Largo, FL 33773
Industry:
Research
Work:
Sri International
Engineer
Shinzo Onishi Photo 3

Shinzo Onishi Seminole, FL

View page
Work:
CRT LLC

Chief Engineer
CRT LLC

2007 to 2011
Sr. Research Engineer
NSF
Arlington, VA
2010 to 2010
University of South Florida
Saint Petersburg, FL
2002 to 2007
Sr. Process Engineer
Unaxis/Plasma Therm Inc
Saint Petersburg, FL
1997 to 2002
Engaged in PVD Commercial System Development R&D
Creare Incorporated
Hanover, NH
1994 to 1997
Heat Flux Micro

1990 to 1994
Consultant
Litton Poly-Scientific
Blacksburg, VA
1987 to 1993
Consultant
Virginia Polytechnic Institute and State University/NSF
Blacksburg, VA
1987 to 1992
Assistant Professor, Electrical Engineering
E.I. DuPont DeNemours & Company
Wilmington, DE
Jun 1987 to Aug 1987
Visiting Scientist in CR&D
CRT LLC

1979 to 1986
Post-Doctoral Fellow/Research Assistant Professor
Zhejiang University
Hangzhou, CN
1985 to 1985
Polytechnic University
Farmingdale, NY
1983 to 1984
Consultant
Education:
Kyoto University
1978
Doctorate of Philosophy in Electronics Engineering
Tokyo University
1978
film
Kyoto University
1974
Master of Science in Electronics Engineering
Kyoto University
1972
Bachelor of Science in Electronics Engineering

Business Records

Name / Title
Company / Classification
Phones & Addresses
Shinzo Onishi
President, Vice President
Willow Grove Estates Homeowners Association, Inc
8115 131 St, Largo, FL 33776

Publications

Us Patents

Magnetron Sputtering Target For Magnetic Materials

View page
US Patent:
6623610, Sep 23, 2003
Filed:
Mar 2, 2002
Appl. No.:
10/090948
Inventors:
Shinzo Onishi - Palm Harbor FL, 34685
International Classification:
C23C 1435
US Classification:
20429816, 20429809
Abstract:
A target for physical-vapor deposition (PVD) and methods for depositing magnetic materials are described Radio frequency (RF) or direct current (DC) power is introduced into the chamber through the target to produce plasma. The planar magnetron system is chosen for its high deposition rates. Since the permanent magnets are behind the target in the traditional system, a magnetic target interferes with the required magnetic fields on the target. To eliminate this problem permanent magnets are arranged on the surface and a magnetic target is used as a part of the magnetic circuit. Strong magnetic fields on the target can now be maintained for high deposition rates. The permanent magnets may be covered by a relatively thin, suitable protective-film or by a film of the same material as the target.

Corner Cube Retroreflector

View page
US Patent:
7201485, Apr 10, 2007
Filed:
Aug 16, 2004
Appl. No.:
10/710983
Inventors:
Rahul Agarwal - Tampa FL, US
Shekhar Bhansali - Tampa FL, US
Shinzo Onishi - Palm Harbor FL, US
Scott Samson - Safety Harbor FL, US
Assignee:
University of South Florida - Tampa FL
International Classification:
G02B 5/122
US Classification:
359529
Abstract:
The present invention includes a novel method to fabricate corner cube retroreflectors, CCRs, where a majority of the wafer area acts as CCRs as compared to a maximum of 33% in previous MEMS CCRs. The present invention also allows for the fabrication of moveable cantilevers which operate at one-third the voltage as compared to a conventional planar cantilever.

Method Of Manufacturing Silicon Topological Capacitors

View page
US Patent:
7829409, Nov 9, 2010
Filed:
Feb 27, 2007
Appl. No.:
11/679580
Inventors:
Shinzo Onishi - Seminole FL, US
Lawrence C. Langebrake - Seminole FL, US
Assignee:
University of South Florida - Tampa FL
International Classification:
H01L 21/8242
US Classification:
438239, 438381, 438700, 257E21008
Abstract:
In accordance with the present invention, a novel method to fabricate topological capacitors is provided. The fabrication method of the instant invention is based upon a reversed surface topology utilizing deep reactive ion etching to establish conductive capacitive elements and non-conductive capacitive element groups.

Hydrogen Storage Nano-Foil And Method Of Manufacture

View page
US Patent:
8083907, Dec 27, 2011
Filed:
Sep 24, 2004
Appl. No.:
10/711552
Inventors:
Shinzo Onishi - Palm Harbor FL, US
Melynda Calves - Riverview FL, US
Assignee:
University of South Florida - Tampa FL
International Classification:
C23C 14/00
C23C 14/32
H01M 8/00
US Classification:
20419215, 20419214, 429400
Abstract:
A hydrogen storage system using a coiled nano-foil hydride and methods for forming the hydrogen absorbing nano-foil coil without backing materials. Intercalation of hydrogen in metal hydrides allows for large amounts of hydrogen to be stored at atmospheric temperatures and pressures. Nano-films provide a large surface area for storage of hydrogen. Excessive heating of the system is avoided by use of a modified magnetron source, and the deposition rate is increased by employing stronger magnetic fields. The foil formed is capable of storage and of mechanical self-support without breakage and expansion up to 20% of its initial volume.

Mems Dc To Dc Switching Converter

View page
US Patent:
8088638, Jan 3, 2012
Filed:
Mar 16, 2007
Appl. No.:
11/687223
Inventors:
Shinzo Onishi - Seminole FL, US
Scott Samson - Safety Harbor FL, US
Raj Popuri - Tampa FL, US
Assignee:
University of South Florida - Tampa FL
International Classification:
H01L 21/00
US Classification:
438 50, 310309
Abstract:
The present invention provides a DC high voltage converter having an oscillator driver, main switch array and topological enhanced capacitors. The switch array utilizes MEM cantilevers and topological capacitors for charge storages for the generation of a high voltage output from a low voltage input.

Mems High Speed Switching Converter

View page
US Patent:
8093967, Jan 10, 2012
Filed:
Mar 16, 2007
Appl. No.:
11/687206
Inventors:
Weidong Wang - Oldsmar FL, US
Shinzo Onishi - Seminole FL, US
Assignee:
University of South Florida - Tampa FL
International Classification:
H01H 51/22
US Classification:
335 78, 200181
Abstract:
The present invention provides a DC high voltage converter having an oscillator driver, main switch array and topological enhanced capacitors. The switch array utilizes MEM cantilevers and topological capacitors for charge storages for the generation of a high voltage output from a low voltage input utilizing the chattering motion of the cantilever.

Mems Dc To Dc Switching Converter

View page
US Patent:
8384169, Feb 26, 2013
Filed:
Nov 30, 2011
Appl. No.:
13/307549
Inventors:
Lawrence Langebrake - Seminole FL, US
Shinzo Onishi - Seminole FL, US
Scott Samson - Safety Harbor FL, US
Raj Popuri - Tampa FL, US
Assignee:
University of South Florida - Tampa FL
International Classification:
H01L 21/76
US Classification:
257418, 257415, 257E29324
Abstract:
The present invention provides a DC high voltage converter having an oscillator driver, main switch array and topological enhanced capacitors. The switch array utilizes MEM cantilevers and topological capacitors for charge storages for the generation of a high voltage output from a low voltage input.

Reactive Physical Vapor Deposition With Sequential Reactive Gas Injection

View page
US Patent:
8597473, Dec 3, 2013
Filed:
Aug 24, 2005
Appl. No.:
11/161976
Inventors:
Shinzo Onishi - Seminole FL, US
Assignee:
University of South Florida - Tampa FL
International Classification:
C23C 14/00
C23C 14/32
C25B 9/00
C25B 11/00
C25B 13/00
US Classification:
20419213, 20419212, 20419215, 20429807
Abstract:
The present invention provides a method of controlling a reactive sputtering system used in coating processes. More specifically, the present invention provides a microprocessor-based control system for reactive gases in a sputtering system, particularly during the start-up phase of operation. The preferred demand for such a reactive gas is predicted for every stage of the operation, and the reactive gas supply is amenable to predictive control provided by object program-driven mathematical formulae. The injection of reactive gas using time-advanced, sequential, mathematically-derived procedures simplifies overall system operation and provides a system with an optimal amount of reactive gas at an optimal time.
Control profile
Shinzo O Onishi from Seminole, FL, age ~81 Get Report