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Shambhu K Shastry

from Framingham, MA
Age ~70
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Also known as:
Shastry K Shambhu
Connected to:
Anupama Shastry, 55Karthikeya Shastry, 49Mruthyunjaya Shastry, 47Padmini S Shastry, 54Shankar N Shastry, 44Manaf M Shata, 33Esan S Shatah, 49Andrew V Shatalin, 42Vladimir N Shatalin, 63Ekaterina S Shatalova, 33

Shambhu Shastry Phones & Addresses

  • Framingham, MA
  • Troy, MI
  • Merrimack, NH
  • Hooksett, NH
  • 6 Oak Tree Ln, Franklin, MA 02038 (508) 520-3975
  • 301 Union St, Franklin, MA 02038
  • Taunton, MA
  • Johnson City, NY
  • Orlando, FL
  • New York, NY

Publications

Us Patents

Method Of Making Light Emitting Diode Displays

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US Patent:
6403985, Jun 11, 2002
Filed:
Dec 23, 1994
Appl. No.:
08/363150
Inventors:
John C. C. Fan - Chestnut Hill MA
Brenda Dingle - Mansfield MA
Shambhu Shastry - Franklin MA
Mark B. Spitzer - Sharon MA
Robert W. McClelland - Norwell MA
Assignee:
Kopin Corporation - Taunton MA
International Classification:
H01L 3300
US Classification:
257 88, 257 90, 257 93
Abstract:
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/CaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.

Method Of Making Light Emitting Diode Displays

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US Patent:
20030020084, Jan 30, 2003
Filed:
Apr 29, 2002
Appl. No.:
10/135182
Inventors:
John Fan - Chestnut Hill MA, US
Brenda Dingle - Mansfield MA, US
Shambhu Shastry - Franklin MA, US
Mark Spitzer - Sharon MA, US
Robert McClelland - Norwell MA, US
Assignee:
Kopin Corporation - Taunton MA
International Classification:
H01L033/00
US Classification:
257/092000
Abstract:
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material such as III-V and particularly AIGaAs/GaAs material are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enabled device registration for LED bars and arrays to be maintained.

Method Of Making Light Emitting Diode Bars And Arrays

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US Patent:
54534054, Sep 26, 1995
Filed:
Dec 9, 1993
Appl. No.:
8/165025
Inventors:
John C. C. Fan - Chestnut Hill MA
Brenda Dingle - Mansfield MA
Shambhu Shastry - Franklin MA
Mark B. Spitzer - Sharon MA
Robert W. McClelland - Norwell MA
Assignee:
Kopin Corporation - Taunton MA
International Classification:
H01L 21465
US Classification:
437228
Abstract:
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.

Method Of Epitaxially Growing Gallium Arsenide On Silicon

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US Patent:
46996885, Oct 13, 1987
Filed:
Jul 14, 1986
Appl. No.:
6/885343
Inventors:
Shambhu K. Shastry - Framingham MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
C30B 2502
C30B 2510
C30B 2518
H01L 21205
US Classification:
156606
Abstract:
Two-step process of expitaxially growing gallium arsenide on a silicon substrate. A silicon substrate is heated to about 450. degree. C. in a reaction chamber and arsine and triethylgallium are introduced into the chamber. After a thin seed layer of gallium arsenide is grown at a relatively slow rate, the silicon substrate is heated to about 600. degree. C. and a thick buffer layer of gallium arsenide is grown at a relatively fast rate.

Light Emitting Diode Bars And Arrays And Method Of Making Same

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US Patent:
53007883, Apr 5, 1994
Filed:
Jan 18, 1991
Appl. No.:
7/643552
Inventors:
John C. C. Fan - Chestnut Hill MA
Brenda Dingle - Mansfield MA
Shambhu Shastry - Franklin MA
Mark B. Spitzer - Sharon MA
Robert W. McClelland - Norwell MA
Assignee:
Kopin Corporation - Taunton MA
International Classification:
H01K 2710
US Classification:
257 13
Abstract:
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.

Method Of Epitaxially Growing Compound Semiconductor Materials

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US Patent:
48910910, Jan 2, 1990
Filed:
Jun 8, 1987
Appl. No.:
7/059441
Inventors:
Shambhu K. Shastry - Framingham MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
C30B 2502
US Classification:
156606
Abstract:
Method of MOVPE growing a compound semiconductor material, for example GaAs, on a substrate, for example Si. Sodium ions are first introduced onto the substrate surface as by immersing it in a cleaning solution containing sodium. A two-step MOVPE process is then employed to grow device quality single crystal compound semiconductor material on the surface of the substrate.
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Shambhu K Shastry from Framingham, MA, age ~70 Get Report