Resumes
Resumes
Shadi Sabri Phones & Addresses
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Apex, NC
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Cary, NC
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Raleigh, NC
Publications
Us Patents
Semiconductor Power Devices Having Gate Dielectric Layers With Improved Breakdown Characteristics And Methods Of Forming Such Devices
View pageUS Patent:
20210336021, Oct 28, 2021
Filed:
Apr 22, 2020
Appl. No.:
16/854959
Inventors:
- Durtham NC, US
Brett Hull - Raleigh NC, US
Edward Robert Van Brunt - Raleigh NC, US
Shadi Sabri - Cary NC, US
Matt N. McCain - Raleigh NC, US
Brett Hull - Raleigh NC, US
Edward Robert Van Brunt - Raleigh NC, US
Shadi Sabri - Cary NC, US
Matt N. McCain - Raleigh NC, US
International Classification:
H01L 29/423
H01L 29/06
H01L 29/739
H01L 29/66
H01L 29/40
H01L 29/78
H01L 29/06
H01L 29/739
H01L 29/66
H01L 29/40
H01L 29/78
Abstract:
A semiconductor device includes a semiconductor layer structure that includes silicon carbide, a gate dielectric layer on the semiconductor layer structure, and a gate electrode on the gate dielectric layer opposite the semiconductor layer structure. In some embodiments, a periphery of a portion of the gate dielectric layer that underlies the gate electrode is thicker than a central portion of the gate dielectric layer, and a lower surface of the gate electrode has recessed outer edges such as rounded and/or beveled outer edges.
Power Semiconductor Devices Having Reflowed Inter-Metal Dielectric Layers
View pageUS Patent:
20200365708, Nov 19, 2020
Filed:
May 16, 2019
Appl. No.:
16/413921
Inventors:
- Durham NC, US
Daniel J. Lichtenwalner - Raleigh NC, US
Shadi Sabri - Cary NC, US
Daniel J. Lichtenwalner - Raleigh NC, US
Shadi Sabri - Cary NC, US
International Classification:
H01L 29/51
H01L 29/16
H01L 29/06
H01L 29/739
H01L 29/78
H01L 29/66
H01L 29/16
H01L 29/06
H01L 29/739
H01L 29/78
H01L 29/66
Abstract:
Power semiconductor devices include multi-layer inter-metal dielectric patterns that include at least one reflowed dielectric material pattern and at least one non-reflowable dielectric material pattern. In other embodiments, power semiconductor devices include reflowed inter-metal dielectric patterns that are formed using sacrificial structures such as dams to limit the lateral spread of the reflowable dielectric material of the inter-metal dielectric pattern during the reflow process. The inter-metal dielectric patterns may have improved shapes and performance.