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Serpil Gonen Phones & Addresses

  • Odenton, MD
  • 9112 6Th St, Lanham Seabrook, MD 20706 (301) 577-4119
  • Lanham, MD
  • 4613 Calvert Rd, College Park, MD 20740 (301) 927-3238 (301) 982-2526
  • 9802 49Th Ave, College Park, MD 20740 (301) 982-2526
  • Lincoln, NE
  • Greenbelt, MD

Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Publications

Us Patents

Reversible Photobleachable Materials Based On Nano-Sized Semiconductor Particles And Their Optical Applications

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US Patent:
20040152011, Aug 5, 2004
Filed:
Dec 9, 2003
Appl. No.:
10/730382
Inventors:
Zhiyun Chen - Alexandria VA, US
Erin Fleet - Springfield VA, US
Serpil Gonen - College Park MD, US
Gregory Cooper - Vienna VA, US
Assignee:
Pixelligent Technologies LLC - Vienna VA
International Classification:
G03F007/00
US Classification:
430/270100, 430/270110, 430/311000, 430/394000
Abstract:
Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.

Reversible Photo Bleachable Materials Based On Nano Sized Semiconductor Particles And Their Optical Applications

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US Patent:
20090220756, Sep 3, 2009
Filed:
Mar 16, 2009
Appl. No.:
12/404472
Inventors:
Zhiyun Chen - Silver Spring MD, US
Erin F. Fleet - Springfield VA, US
Serpil Gonen - College Park MD, US
Gregory D. Cooper - Arlington VA, US
Assignee:
PIXELLIGENT TECHNOLOGIES LLC - College Park MD
International Classification:
B32B 5/16
H01B 1/22
B32B 3/10
G01N 21/00
US Classification:
428206, 252503, 4281951, 356432, 977814, 977811, 977816, 977818, 977819, 977823, 977824, 977773
Abstract:
Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.

Programmable Photolithographic Mask Based On Semiconductor Nano-Particle Optical Modulators

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US Patent:
20040150865, Aug 5, 2004
Filed:
Dec 9, 2003
Appl. No.:
10/730381
Inventors:
Zhiyun Chen - Alexandria VA, US
Gregory Cooper - Vienna VA, US
Serpil Gonen - College Park MD, US
Erin Fleet - Springfield VA, US
Assignee:
Pixelligent Technologies LLC, - Vienna VA
International Classification:
G02F001/03
US Classification:
359/252000
Abstract:
Nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography.
Serpil Z Gonen from Odenton, MD, age ~52 Get Report