Resumes
Resumes
Sergey Nikishin Phones & Addresses
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8504 Joliet Ave, Lubbock, TX 79423 (806) 791-0368 (806) 791-1182
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8525 Jordan Ave, Lubbock, TX 79423 (806) 791-1182
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6302 Elgin Ave, Lubbock, TX 79413 (806) 792-8488
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Fort Collins, CO
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8504 Joliet Ave, Lubbock, TX 79423 (806) 791-0368
Work
Position:
Sales Occupations
Education
Degree:
Associate degree or higher
Emails
Publications
Us Patents
Method Of Epitaxial Growth Of High Quality Nitride Layers On Silicon Substrates
View pageUS Patent:
6391748, May 21, 2002
Filed:
Oct 3, 2000
Appl. No.:
09/677762
Inventors:
Henryk Temkin - Ransom Canyon TX
Sergey A. Nikishin - Lubbock TX
Sergey A. Nikishin - Lubbock TX
Assignee:
Texas Tech University - Lubbock TX
International Classification:
H01L 2120
US Classification:
438478, 438483, 438493
Abstract:
Aluminum nitride, AlN, layers are grown on silicon substrates using molecular beam epitaxial (MBE) growth. The AlN layer is initially grown by subjecting the silicon substrate to background ammonia followed by repetitively alternating the flux of 1) Al without ammonia and 2) ammonia without Al. After the surface of the silicon structure is sufficiently covered with AlN, the wafer is further subjected to a flux of ammonia and aluminum applied simultaneously to continue the epitaxial growth process. The process minimizes the formation of amorphous silicon nitride, SiN , compounds on the surface of the substrate which form due to background nitrogen levels in the molecular beam epitaxial growth apparatus. A surface free of amorphous silicon nitride is necessary for formation of high quality AlN. The AlN layer may be further used as a buffer layer for AlGaN/GaN growth.