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Selim S Bencuya

from San Francisco, CA
Age ~68
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Also known as:
Selim Tr Bencuya, Selim A Bencuya, Selim J Bencuya, Saleem Bencuya, Dsa Top
Phone and address:
235 Berry St APT 614, San Francisco, CA 94158
(949) 533-8964
Related to:
Shelly S Bencuya, 36Eitan Bencuya, 40Eitan Bencuya, 54Anna Bencuya, 64
Connected to:
Karilena A Bencuya, 54Craig L Bencz, 50Cynthia Bencz, 52Scott A Bencze, 49Steven Bencze, 67Michelle M Benczkowski, 55Eric G Bend, 45Jay Bend, 53Amy L Benda, 65Ben Benda, 76

Selim Bencuya Phones & Addresses

  • 235 Berry St APT 614, San Francisco, CA 94158 (949) 533-8964
  • 19201 Croyden Ter, Irvine, CA 92603 (949) 725-3470
  • 293 Stonecliffe Aisle, Irvine, CA 92612
  • 62 Westgate Rd, Newton Center, MA 02159 (617) 969-9154
  • 83 Saco St, Newton, MA 02464
  • Waltham, MA
  • Orange, CA
  • Douglas, WY

Work

Position: Administration/Managerial

Education

Degree: Graduate or professional degree

Resumes

Resumes

Selim Bencuya Photo 1

Selim Bencuya

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Location:
San Francisco Bay Area
Industry:
Semiconductors
Selim Bencuya Photo 2

Selim Bencuya

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Selim Bencuya
Vice-President
EMERGENTVIEWS, INC
Mfg Search/Navigation Equipment
71 Stevenson St STE 400, San Francisco, CA 94105
525 Market St, San Francisco, CA 94105
(415) 230-4345

Publications

Us Patents

Cmos Image Sensor Arrangement With Reduced Pixel Light Shadowing

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US Patent:
6838715, Jan 4, 2005
Filed:
Apr 29, 2003
Appl. No.:
10/425488
Inventors:
Selim Bencuya - Irvine CA, US
Richard Mann - Torrance CA, US
Erik Stauber - San Diego CA, US
Assignee:
ESS Technology, Inc. - Fremont CA
International Classification:
H01L 31062
US Classification:
257291, 257184, 257187, 257203, 257292, 257293, 257433, 257461, 257462, 257929
Abstract:
An exemplary CMOS image sensor comprises a plurality of pixels arranged in an array. The plurality of pixels includes a first pixel proximate an optical center of the array, and a second pixel proximate a peripheral edge of the array. The CMOS image sensor further comprises a first metal interconnect segment associated with the first pixel situated in a first metal layer, and a second metal interconnect segment associated with the second pixel situated in the first metal layer. The second metal interconnect segment is shifted closer to the optical center of the array than the first metal interconnect segment so that the second metal interconnect segment approximately aligns with a principle ray angle incident the second pixel, thereby reducing pixel light shadowing.

Reducing Reset Noise In Cmos Image Sensors

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US Patent:
6911640, Jun 28, 2005
Filed:
Apr 25, 2003
Appl. No.:
10/423681
Inventors:
Selim Bencuya - Irvine CA, US
Richard Mann - Torrance CA, US
Assignee:
ESS Technology, Inc. - Fremont CA
International Classification:
H04N003/14
US Classification:
2502081, 348308
Abstract:
An exemplary CMOS image sensor comprises a reset transistor, a photodiode, reset drain voltage circuitry, and reset gate voltage circuitry. A cathode of the photodiode is connected to a source of the reset transistor, and an anode of the photodiode is connected to ground. The reset drain voltage circuitry is connected to a drain of the reset transistor, and the reset gate voltage circuitry is connected to a gate of the reset transistor. During an exemplary hard reset operation, the reset drain voltage circuitry supplies a first drain voltage to the drain of the reset transistor in accordance with a determined level of light for exposure, which is determined dynamically. According to another exemplary reset operation, a hard reset phase is immediately followed by a soft reset phase.

Image Sensor With Guard Ring For Suppressing Radiation Charges

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US Patent:
7042058, May 9, 2006
Filed:
Jan 6, 2005
Appl. No.:
11/031561
Inventors:
Richard A. Mann - Torrance CA, US
Selim Bencuya - Irvine CA, US
Assignee:
ESS Technology, Inc. - Freemont CA
International Classification:
H01L 27/14
US Classification:
257452, 257414, 257428, 257431, 257449
Abstract:
An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark signal detector is shielded and separated from the active area to substantially reduce the radiation charges that reach the dark signal detector. In another implementation, the image sensor includes a radiation guard that is disposed between the active area and the shielded detector. When radiation or light is permitted to enter the active area, the guard when adequately biased attracts and collects radiated charges that may otherwise travel beyond the active area to reach the shielded detector and contaminate a measurement for the dark signal reference.

Suppressing Radiation Charges From Reaching Dark Signal Sensor

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US Patent:
7053458, May 30, 2006
Filed:
Apr 30, 2002
Appl. No.:
10/136413
Inventors:
Richard A. Mann - Torrance CA, US
Selim Bencuya - Irvine CA, US
Assignee:
ESS Technology, Inc. - Freemont CA
International Classification:
H01L 27/14
US Classification:
257452, 257414, 257428, 257431, 257449
Abstract:
An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark signal detector is shielded and separated from the active area to substantially reduce the radiation charges that reach the dark signal detector. In another implementation, the image sensor includes a radiation guard that is disposed between the active area and the shielded detector. When radiation or light is permitted to enter the active area, the guard when adequately biased attracts and collects radiated charges that may otherwise travel beyond the active area to reach the shielded detector and contaminate a measurement for the dark signal reference.

Method And System For Resetting Image Sensors

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US Patent:
7067786, Jun 27, 2006
Filed:
Mar 17, 2005
Appl. No.:
11/083466
Inventors:
Selim Bencuya - Irvine CA, US
Richard Mann - Torrance CA, US
Assignee:
ESS Technology, Inc. - Fremont CA
International Classification:
H04N 3/14
H04N 5/335
US Classification:
2502081, 348308
Abstract:
An exemplary CMOS image sensor comprises a reset transistor, a photodiode, reset drain voltage circuitry, and reset gate voltage circuitry. A cathode of the photodiode is connected to a source of the reset transistor, and an anode of the photodiode is connected to ground. The reset drain voltage circuitry is connected to a drain of the reset transistor, and the reset gate voltage circuitry is connected to a gate of the reset transistor. During an exemplary hard reset operation, the reset drain voltage circuitry supplies a first drain voltage to the drain of the reset transistor in accordance with a determined level of light for exposure, which is determined dynamically. According to another exemplary reset operation, a hard reset phase is immediately followed by a soft reset phase.

Method And Apparatus For Removing Electrons From Cmos Sensor Photodetectors

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US Patent:
7250665, Jul 31, 2007
Filed:
Dec 30, 2004
Appl. No.:
11/029100
Inventors:
Zeynep Toros - Aliso Viejo CA, US
Selim Bencuya - Irvine CA, US
Assignee:
ESS Technology, Inc. - Fremont CA
International Classification:
H01L 31/06
US Classification:
257463, 257464, 257465, 257292, 257E31073
Abstract:
An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.

Method And Apparatus For Varying A Cmos Sensor Control Voltage

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US Patent:
7323671, Jan 29, 2008
Filed:
Dec 30, 2004
Appl. No.:
11/029103
Inventors:
Zeynep Toros - Aliso Viejo CA, US
Richard Mann - Torrance CA, US
Selim Bencuya - Irvine CA, US
Chi-Shao (Sergi) Lin - Mission Viejo CA, US
Jiafu Luo - Irvine CA, US
Assignee:
ESS Technology, Inc. - Fremont CA
International Classification:
H01L 27/00
G01J 1/44
H03F 3/08
H01J 40/14
US Classification:
2502081, 250214 R, 257291, 348302
Abstract:
An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.

Method For Designing A Cmos Sensor Using Parameters

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US Patent:
7334211, Feb 19, 2008
Filed:
Dec 30, 2004
Appl. No.:
11/029101
Inventors:
Zeynep Toros - Aliso Viejo CA, US
Richard Mann - Torrance CA, US
Selim Bencuya - Irvine CA, US
Assignee:
ESS Technology, Inc. - Fremont CA
International Classification:
G06F 17/50
US Classification:
716 19, 716 11, 716 21
Abstract:
An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.
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Selim S Bencuya from San Francisco, CA, age ~68 Get Report