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Satoru Kobayashi Phones & Addresses

  • Austin, TX
  • Los Altos, CA
  • Natick, MA
  • San Jose, CA
  • Mountain View, CA

Business Records

Name / Title
Company / Classification
Phones & Addresses
Satoru Kobayashi
Director
JAPAN MAINTENANCE AND OPERATION SERVICE CORPORATIO

Publications

Wikipedia

Satoru Kobayashi

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Satoru Kobayashi (, Kobayashi Satoru, born April 5, 1959) is a professional Go player. Contents. 1 Biography; 2 Suspension; 3 Promotion record ...

Us Patents

Plasma Reactor With Reduced Electrical Skew Using Electrical Bypass Elements

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US Patent:
7988815, Aug 2, 2011
Filed:
Jul 26, 2007
Appl. No.:
11/828568
Inventors:
Shahid Rauf - Pleasanton CA, US
Kenneth S. Collins - San Jose CA, US
Kallol Bera - San Jose CA, US
Kartik Ramaswamy - San Jose CA, US
Hiroji Hanawa - Sunnyvale CA, US
Andrew Nguyen - San Jose CA, US
Steven C. Shannon - San Mateo CA, US
Lawrence Wong - Fremont CA, US
Satoru Kobayashi - Mountain View CA, US
Troy S. Detrick - Los Altos CA, US
James P. Cruse - Santa Cruz CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
H01L 21/306
US Classification:
15634543, 15634547, 15634548, 118723 R, 118723 E, 118723 I
Abstract:
RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

In-Situ Vhf Voltage Sensor For A Plasma Reactor

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US Patent:
8513939, Aug 20, 2013
Filed:
Mar 21, 2011
Appl. No.:
13/052280
Inventors:
Hiroji Hanawa - Sunnyvale CA, US
Satoru Kobayashi - Santa Clara CA, US
Kartik Ramaswamy - San Jose CA, US
Shahid Rauf - Pleasanton CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01R 31/02
G01R 27/08
US Classification:
324 725, 324713
Abstract:
An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.

Plasma Reactor With Reduced Electrical Skew Using A Conductive Baffle

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US Patent:
20090025879, Jan 29, 2009
Filed:
Jul 26, 2007
Appl. No.:
11/828713
Inventors:
Shahid Rauf - Pleasanton CA, US
Kenneth S. Collins - San Jose CA, US
Kallol Bera - San Jose CA, US
Kartik Ramaswamy - San Jose CA, US
Andrew Nguyen - San Jose CA, US
Steven C. Shannon - San Mateo CA, US
Lawrence Wong - Fremont CA, US
Satoru Kobayashi - Mountain View CA, US
Troy S. Detrick - Los Altos CA, US
James P. Cruse - Santa Cruz CA, US
International Classification:
H01L 21/306
US Classification:
15634548
Abstract:
RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall.

Plasma Uniformity Control Through Vhf Cathode Ground Return With Feedback Stabilization Of Vhf Cathode Impedance

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US Patent:
20110005679, Jan 13, 2011
Filed:
Jul 13, 2009
Appl. No.:
12/502005
Inventors:
HIROJI HANAWA - Sunnyvale CA, US
Kartik Ramaswamy - San Jose CA, US
Satoru Kobayashi - Mountain View CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/3065
H05K 3/07
US Classification:
15634524, 205641
Abstract:
Plasma process uniformity is controlled by maintaining near an optimum value an impedance of a ground return path for VHF source power from an overhead electrode through a workpiece support. A feedback control loop controls a variable reactance element of a reactive circuit that provides isolation between the VHF source power and a lower frequency bias power match circuit.

Independent Control Of Rf Phases Of Separate Coils Of An Inductively Coupled Plasma Reactor

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US Patent:
20130284370, Oct 31, 2013
Filed:
Mar 14, 2013
Appl. No.:
13/804616
Inventors:
Satoru Kobayashi - Santa Clara CA, US
Lawrence Wong - Fremont CA, US
Jonathan Liu - Sunnyvale CA, US
Yang Yang - Sunnyvale CA, US
Kartik Ramaswamy - San Jose CA, US
Shahid Rauf - Pleasanton CA, US
International Classification:
H05H 1/46
US Classification:
15634528, 118663
Abstract:
Plasma distribution is controlled in a plasma reactor by controlling the phase differences between different RF coil antennas, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.

In-Situ Vhf Current Sensor For A Plasma Reactor

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US Patent:
20130320998, Dec 5, 2013
Filed:
Jul 17, 2013
Appl. No.:
13/944026
Inventors:
SATORU KOBAYASHI - SANTA CLARA CA, US
KARTIK RAMASWAMY - SAN JOSE CA, US
SHAHID RAUF - PLEASANTON CA, US
Assignee:
APPLIED MATERIALS, INC. - SANTA CLARA CA
International Classification:
G01R 27/32
US Classification:
324629
Abstract:
An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.

N-Word Read/Write Access Achieving Double Bandwidth Without Increasing The Width Of External Data I/O Bus

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US Patent:
53414888, Aug 23, 1994
Filed:
Feb 14, 1992
Appl. No.:
7/837555
Inventors:
Satoru Kobayashi - Natick MA
Assignee:
NEC Electronics, Inc. - Mountain View CA
International Classification:
G06F 1200
G11C 700
G11C 800
US Classification:
395425
Abstract:
An N-word write access memory is described. Using a variation of conventional control signals RAS, CAS, WE and OE, an innovative scheme of signal protocol allows the N-bit word write memory to have an input/output bandwidth double that attained in the prior art, using substantially the same components and without affecting the bit-width, hence, the pin-count, of the external data bus.

Device And Method For Tuning Plasma Distribution Using Phase Control

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US Patent:
20200161093, May 21, 2020
Filed:
Oct 24, 2019
Appl. No.:
16/663215
Inventors:
- Santa Clara CA, US
Kallol BERA - Fremont CA, US
Jonghoon BAEK - San Jose CA, US
Amit Kumar BANSAL - Milpitas CA, US
Jun MA - San Diego CA, US
Satoru KOBAYASHI - Sunnyvale CA, US
International Classification:
H01J 37/32
C23C 16/505
Abstract:
Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.
Satoru Kobayashi from Austin, TX, age ~75 Get Report