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Sasan A Fathpour

from Winter Park, FL
Age ~51
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Also known as:
Sasan C Fathpour, Fafan Fathpour, Susan Fathpour
Connected to:
Elsayed Fathy, 44Sarah H Fathy, 41Taher F Fathy, 28Kenneth J Fatica, 88Nancy K Fatica, 59Nicholas J Fatica, 68Roger E Fatica, 98Victor A Fatica, 36Kurt P Faticanti, 57Barry A Faticoni, 70

Sasan Fathpour Phones & Addresses

  • Winter Park, FL
  • 4062 Markham Pl, Orlando, FL 32814 (407) 644-6961
  • Laguna Beach, CA
  • Los Angeles, CA
  • Ann Arbor, MI

Resumes

Resumes

Sasan Fathpour Photo 1

Assistant Professor

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Position:
Assistant Professor at CREOL, the University of Central Florida
Location:
Orlando, Florida Area
Industry:
Research
Work:
CREOL, the University of Central Florida since Sep 2008
Assistant Professor
Ostendo Technologies Mar 2008 - Aug 2008
Senior Member Research Staff
UCLA Jul 2007 - Mar 2008
Visiting Assistant Professor
UCLA Jul 2005 - Jul 2007
Postdoctoral Fellow
Education:
University of Michigan 2000 - 2005
Ph.D., Electrical Engineering The University of British Columbia 1999 - 2000
MASc, Electrical Engineering Isfahan University of Technology 1991 - 1995
BS, Electrical Engineering
Honor & Awards:
2007: Featured in the 62nd Edition of Marquis Who’s Who in America 2007: Recipient of the 2007 UCLA Chancellor’s Award for Postdoctoral Research 2006: Worldwide Press Coverage of Research in Silicon Photonics 2000: International Graduate Student Fellowship, University of Michigan
Languages:
Persian

Business Records

Name / Title
Company / Classification
Phones & Addresses
Sasan D. Fathpour
Manager
Partow Technologies LLC
Engineering Services
4000 Central Florida Blvd, Orlando, FL 32816
4304 Scorpius St, Orlando, FL 32816

Publications

Us Patents

Photonic Apparatus For Controlling Polarization

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US Patent:
20190204504, Jul 4, 2019
Filed:
Dec 10, 2018
Appl. No.:
16/214456
Inventors:
- Orlando FL, US
SASAN FATHPOUR - ORLANDO FL, US
International Classification:
G02B 6/02
F21V 8/00
G02B 6/126
G02B 6/27
G02B 5/30
Abstract:
A photonic device has a polarization-dependent region and a device layer including a first cladding film, a second cladding film, and a core film. The core film includes one of (1) a material having an index nand (2) alternating layers of a first material having a first index and second material having a second index. The alternating layers have an effective index for TE polarized light nand an effective index for TM polarized light n. Each of the first cladding film and the second cladding film include the other of (1) the material having the index of refraction nand (2) the alternating layers n

Hetero-Structure-Based Integrated Photonic Devices, Methods And Applications

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US Patent:
20190207370, Jul 4, 2019
Filed:
Dec 3, 2018
Appl. No.:
16/207890
Inventors:
- Orlando FL, US
SASAN FATHPOUR - ORLANDO FL, US
International Classification:
H01S 5/20
H01S 5/042
H01S 5/22
G02B 6/122
H01S 5/02
Abstract:
An integrated photonic structure and a method of fabrication includes a substrate having at least one opening disposed therein; a semiconductor stack disposed above the substrate, the semiconductor stack being, at least in part, isolated from the substrate by an opening to define a suspended semiconductor membrane; and a first doped region and a second doped region located within the suspended semiconductor membrane. The first doped region is laterally separated from the second doped region by an optically active region disposed therein that defines a waveguiding region of the integrated photonic structure.
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Sasan A Fathpour from Winter Park, FL, age ~51 Get Report