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Sanjeev Lahoti Phones & Addresses

  • 13818 Viewfield Ct, Houston, TX 77059 (281) 461-8109 (281) 486-0863
  • Webster, TX
  • Yamhill, OR

Work

Company: Consultant Jan 2013 Address: Houston, Texas Area Position: Silicon materials and the solar industry

Education

Degree: M. S. School / High School: University of Alabama 1987 to 1989 Specialities: Chemical Engineering

Industries

Renewables & Environment

Resumes

Resumes

Sanjeev Lahoti Photo 1

Silicon Materials And The Solar Industry Consultant

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Position:
Silicon Materials and the Solar Industry at Consultant, Owner at Saffron Fields Vineyard
Location:
Houston, Texas Area
Industry:
Renewables & Environment
Work:
Consultant - Houston, Texas Area since Jan 2013
Silicon Materials and the Solar Industry

Saffron Fields Vineyard - Yamhill, OR since Aug 2007
Owner

Virasa Technologies, Inc. Oct 2007 - Sep 2012
Managing Director

MEMC Electronic Materials 1997 - 2007
Marketing Manager
Education:
University of Alabama 1987 - 1989
M. S., Chemical Engineering
University of Houston-Clear Lake 1991 - 1994
M.B.A., Marketing
Amravati University 1983 - 1987
B. Tech, Chemical Engineering
University of California, Davis
Certificate in WineMaking, Oenology

Business Records

Name / Title
Company / Classification
Phones & Addresses
Sanjeev Lahoti
Director
SPECIALTY PRECURSORS G.P., INC
12621 Featherwood Dr SUITE 120, Houston, TX 77034

Publications

Us Patents

Silicon Tetrafluoride Byproduct Separation Process

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US Patent:
7897125, Mar 1, 2011
Filed:
Aug 14, 2009
Appl. No.:
12/541261
Inventors:
Vithal Revankar - Houston TX, US
Sanjeev Lahoti - Houston TX, US
International Classification:
C01B 17/96
C01D 5/00
C01F 7/02
B01J 19/00
US Classification:
423111, 423122, 423179, 423184, 423551, 423625, 422187, 23302 T, 23305 A
Abstract:
Embodiments of the invention provide a system and process for recovering useful compounds from a byproduct composition produced in a silicon tetrafluoride production process.

Process Of Silicon Tetrafluoride Gas Synthesis

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US Patent:
8124039, Feb 28, 2012
Filed:
Jan 26, 2009
Appl. No.:
12/359515
Inventors:
Vithal Revankar - Houston TX, US
Sanjeev Lahoti - Houston TX, US
International Classification:
C01B 33/08
US Classification:
423341, 423342, 423544, 423549, 423554, 423555, 423556
Abstract:
A process of producing silicon tetrafluoride from fluoride containing feedstocks. The process calcines the fluoride containing feedstock and a silica containing feedstock before reacting the mixture with sulfuric acid to produce silicon tetrafluoride. The silicon tetrafluoride is scrubbed with sulfuric acid. Excess sulfuric acid is recycled to the process. The process demonstrates an economic and environmentally friendly way to produce high quality silicon tetrafluoride.

Process For Improved Chemcial Vapor Deposition Of Polysilicon

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US Patent:
8399072, Mar 19, 2013
Filed:
Jun 4, 2009
Appl. No.:
12/478089
Inventors:
Vithal Revankar - Houston TX, US
Sanjeev Lahoti - Houston TX, US
Assignee:
Savi Research, Inc. - Houston TX
International Classification:
C23C 8/00
C23C 16/00
US Classification:
427588, 4272481
Abstract:
A process for producing silicon rods including providing a reactor vessel containing at least one reaction chamber surrounded by a jacket, wherein a pre-heating fluid is circulated in the jacket; one or more electrode assemblies extending into the reaction chamber wherein each electrode assembly comprises a gas inlet, one or more heat transfer fluid inlets/outlets, at least one pair of silicon filaments, the filaments connected to each other at their upper ends with a silicon bridge to form a filament/slim rod assembly, each filament/slim rod assembly enclosed in an isolation jacket; a source of a silicon-bearing gas connected to the interior of the vessel for supplying the gas into the reaction chamber to produce a reaction and to deposit polycrystalline silicon on the filament by chemical vapor deposition thereby producing a rod of polycrystalline silicon; a heat transfer system that is connected to the jacketed reaction chamber that supplies heat transfer fluid to preheat the reaction chamber; and a power supply wherein the power supply supplies less than about 26,000 volts; wherein the apparatus does not include a heating finger is provided.

Method Of Gas Distribution And Nozzle Design In The Improved Chemical Vapor Deposition Of Polysilicon Reactor

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US Patent:
20110151137, Jun 23, 2011
Filed:
Dec 16, 2010
Appl. No.:
12/970562
Inventors:
Vithal Revankar - Houston TX, US
Sanjeev Lahoti - Houston TX, US
International Classification:
B05D 3/06
C23C 16/00
C23C 16/22
US Classification:
427545, 118724, 118723 R
Abstract:
An improved process and apparatus for uniform gas distribution in chemical vapor deposition (CVD) Siemens type processes is provided. The process comprises introduction of a silicon-bearing gas tangentially to and uniformly along the length of a growing silicon rod in a CVD reactor, resulting in uniform deposition of polysilicon along the rod. The apparatus comprises an improved gas nozzle design and arrangement along the length of the rod, promoting uniform deposition of polysilicon.

Cvd-Siemens Reactor Process Hydrogen Recycle System

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US Patent:
20110206842, Aug 25, 2011
Filed:
Feb 25, 2010
Appl. No.:
12/712314
Inventors:
Vithal Revankar - Houston TX, US
Sanjeev Lahoti - Houston TX, US
International Classification:
C23C 16/448
C23C 16/00
US Classification:
4272481, 118724
Abstract:
A hydrogen recycle process and system for use with chemical vapor deposition (CVD) Siemens type processes is provided. The process results in substantially complete or complete hydrogen utilization and substantially contamination-free or contamination-free hydrogen.

Cvd-Siemens Monosilane Reactor Process With Complete Utilization Of Feed Gases And Total Recycle

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US Patent:
20120058022, Mar 8, 2012
Filed:
Sep 2, 2010
Appl. No.:
12/874873
Inventors:
Vithal Revankar - Houston TX, US
Sanjeev Lahoti - Houston TX, US
International Classification:
B01J 19/00
F25J 1/00
B01J 8/02
US Classification:
422187, 422198, 62607
Abstract:
The present invention relates to a monosilane (SiH) and hydrogen recycle process/system for chemical vapor deposition (CVD) of monosilane-based CVD polysilicon. In particular, the present invention relates to the substantially complete silane utilization and unconverted (from the reactor) contamination-free complete silane and hydrogen recycle process of producing polysilicon chunk materials via the decomposition of gaseous silane precursors.

Process For Preparing Dry Sodium Aluminum Hydride

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US Patent:
52955818, Mar 22, 1994
Filed:
Nov 5, 1992
Appl. No.:
7/972761
Inventors:
Sanjeev Lahoti - Houston TX
Assignee:
Ethyl Corporation - Richmond VA
International Classification:
B03B 100
US Classification:
209 3
Abstract:
This invention relates to a process for obtaining dry sodium aluminum hydride from a slurry containing the production products from a sodium aluminum hydride plant.

Cvd-Siemens Reactor Process Hydrogen Recycle System

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US Patent:
20150107298, Apr 23, 2015
Filed:
Dec 22, 2014
Appl. No.:
14/580210
Inventors:
- Houston TX, US
Sanjeev Lahoti - Houston TX, US
International Classification:
C23C 16/44
C23C 16/24
US Classification:
62617
Abstract:
A hydrogen recycle process and system for use with chemical vapor deposition (CVD) Siemens type processes is provided. The process results in substantially complete or complete hydrogen utilization and substantially contamination-free or contamination-free hydrogen.
Sanjeev M Lahoti from Houston, TX, age ~60 Get Report