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Ryan M Diestelhorst

from Atlanta, GA
Age ~42
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Also known as:
Ryan Matthew Diestelhorst, Ryan N Diestelhorst
Phone and address:
914 Collier St, Atlanta, GA 30318
(404) 350-0739
Related to:
Preston R Sellars, 61Aaron Paul Sellars, 41Amy S Harllee, 49Jack B Diestelhorst, 71Debra D Solomon, 70Scott B Diestelhorst, 44Beatrice S Sellars, 99Lura Meyer, 42Richard J Solomon, 71
Connected to:
Emilee S Diestelhorst, 41Garrett J Diestel, 38Sharon L Diestelkamp, 87Jeannin Diesterhoft, 55Kathy Diesterhaupt, 71Troy A Diestler, 44Asher Diesto, 35Diana Diestra, 42Maria C Diestra, 63Erika M Diestro, 66

Ryan Diestelhorst Phones & Addresses

  • 914 Collier St, Atlanta, GA 30318 (404) 350-0739
  • Sunnyvale, CA
  • San Jose, CA
  • Tucker, GA
  • 2701 Everett Ln, Tallahassee, FL 32308 (850) 383-6907 (850) 385-5725
  • Decatur, GA

Work

Company: Onscale Apr 2018 Position: Vice president of cloud product

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Georgia Institute of Technology 2002 to 2012 Specialities: Electrical Engineering

Skills

Analog Circuit Design • Mems • Nanotechnology • Cmos • Mixed Signal • Cadence Virtuoso • Microfabrication • Characterization • Semiconductor Device • Spice • Semiconductors • Nanomaterials • Ic • Integrated Circuit Design • Analog • Sensors • Simulations • R&D • Circuit Design • Device Characterization

Industries

Electrical/Electronic Manufacturing

Resumes

Resumes

Ryan Diestelhorst Photo 1

Vice President Of Cloud Product

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Location:
Atlanta, GA
Industry:
Electrical/Electronic Manufacturing
Work:
Onscale
Vice President of Cloud Product
Nextinput Jun 2011 - Mar 2018
Founder and Chief Technology Officer
Georgia Institute of Technology Sep 2008 - Aug 2012
Graduate Researcher
Nextinput Sep 2008 - Aug 2012
Board Member
Nasa Jet Propulsion Laboratory May 2010 - Aug 2010
Intern
Education:
Georgia Institute of Technology 2002 - 2012
Doctorates, Doctor of Philosophy, Electrical Engineering Florida State University 2001 - 2002
Skills:
Analog Circuit Design
Mems
Nanotechnology
Cmos
Mixed Signal
Cadence Virtuoso
Microfabrication
Characterization
Semiconductor Device
Spice
Semiconductors
Nanomaterials
Ic
Integrated Circuit Design
Analog
Sensors
Simulations
R&D
Circuit Design
Device Characterization

Publications

Us Patents

Microelectromechanical Load Sensor And Methods Of Manufacturing The Same

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US Patent:
20140007705, Jan 9, 2014
Filed:
Jul 3, 2013
Appl. No.:
13/934900
Inventors:
Ryan Diestelhorst - Atlanta GA, US
International Classification:
G01L 1/18
B81C 1/00
B81B 3/00
US Classification:
73862628, 257417, 438 50
Abstract:
A microelectromechanical (“MEMS”) load sensor device for measuring a force applied by a human user is described herein. In one aspect, the load sensor device has a contact surface in communication with a touch surface which communicates forces originating on the touch surface to a deformable membrane, on which load sensor elements are arranged, such that the load sensor device produces a signal proportional to forces imparted by a human user along the touch surface. In another aspect, the load sensor device has an overload protection ring to protect the load sensor device from excessive forces. In another aspect, the load sensor device has embedded logic circuitry to allow a microcontroller to individually address load sensor devices organized into an array. In another aspect, the load sensor device has electrical and mechanical connectors such as solder bumps designed to minimize cost of final component manufacturing.

Force Sensitive Interface Device And Methods Of Using Same

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US Patent:
20130096849, Apr 18, 2013
Filed:
Oct 11, 2012
Appl. No.:
13/649526
Inventors:
Ryan Diestelhorst - Atlanta GA, US
Assignee:
NEXTINPUT INC. - Atlanta GA
International Classification:
G06F 19/00
US Classification:
702 42, 702 41
Abstract:
An interface device for measuring forces applied to the interface device. The interface device has a flexible contact surface suspended above a rigid substrate. The interface device has at least one sensor in communication with the contact surface. The interface device has processing circuitry for receiving signals from the sensors and substantially instantaneously producing an output signal corresponding to the location and force applied in multiple locations across the contact surface.

Integrated Digital Force Sensors And Related Methods Of Manufacture

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US Patent:
20220268648, Aug 25, 2022
Filed:
Feb 21, 2022
Appl. No.:
17/676477
Inventors:
- Mountain View CA, US
Ryan Diestelhorst - Atlanta GA, US
Dan Benjamin - Atlanta GA, US
Julius Minglin Tsai - San Jose CA, US
Michael Dueweke - Campbell CA, US
International Classification:
G01L 1/18
B81B 7/02
B81C 1/00
G01L 1/14
G01L 1/16
Abstract:
In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Integrated Piezoresistive And Piezoelectric Fusion Force Sensor

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US Patent:
20220260436, Aug 18, 2022
Filed:
Feb 3, 2022
Appl. No.:
17/591715
Inventors:
- Mountain View CA, US
Ryan Diestelhorst - Atlanta GA, US
Dan Benjamin - Atlanta GA, US
International Classification:
G01L 1/16
G01L 1/18
G01L 5/00
Abstract:
Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

Sealed Force Sensor With Etch Stop Layer

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US Patent:
20230016531, Jan 19, 2023
Filed:
Jul 8, 2022
Appl. No.:
17/860941
Inventors:
- San Jose CA, US
Ryan Diestelhorst - Sunnyvale CA, US
Dan Benjamin - Atlanta GA, US
International Classification:
G01L 1/18
B81B 3/00
B81C 1/00
G01L 1/26
Abstract:
An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

Methods And Systems For The Estimation Of The Computational Cost Of Simulation

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US Patent:
20210133378, May 6, 2021
Filed:
Nov 6, 2020
Appl. No.:
17/091505
Inventors:
- Redwood City CA, US
Anil Sehgal - Atlanta GA, US
Scott McClennan - Sunnyvale CA, US
Joshua Oster-Morris - Atlanta GA, US
Ryan Diestelhorst - Atlanta GA, US
International Classification:
G06F 30/27
G06N 20/00
Abstract:
Described herein are methods and systems for the estimation of the computational cost of simulation using a machine learning model. An example method includes inputting a feature data set into a machine learning model. The feature data set includes model geometry metadata and simulation metadata. The method further includes predicting, using the machine learning model, a computational cost characteristic for a simulation process.

Systems And Methods For Running A Simulation

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US Patent:
20200342148, Oct 29, 2020
Filed:
Apr 23, 2020
Appl. No.:
16/856222
Inventors:
- Cupertino CA, US
Gerald Harvey - San Francisco CA, US
Andy Tweedie - Glasgow, GB
Ryan Diestelhorst - Atlanta GA, US
Josh Oster-Morris - Atlanta GA, US
Laura Carcione - Los Altos CA, US
Scott McClennan - Sunnyvale CA, US
Jonathan McLaughlin - Glasgow, GB
Jeff Dobson - Glasgow, GB
International Classification:
G06F 30/20
G06F 9/54
Abstract:
Systems and methods are provided to move the solving of multi-physics engineering simulations away from specific CAE, or combination CAD and CAE, applications. In one embodiment, an Application Programming Interface (API) is provided that can be integrated into any device, system, application, or software workflow. The API exposes a series of functions or modules that a user can use to create a simulation file that includes parameters such as a model for the simulation, physics for the simulation, timings for the simulation, and other parameters. The simulation file may then be executed on one or more nodes of a cloud-based computer cluster, and the results of executing the simulation can be provided back to the user. The user may then visualize the results using their preferred device, software, application, or workflow.

Systems And Methods For Computational Windowing

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US Patent:
20200226310, Jul 16, 2020
Filed:
Jan 13, 2020
Appl. No.:
16/740960
Inventors:
- Redwood City CA, US
Dave Vaughan - Mountain View CA, US
Scott McClennan - Sunnyvale CA, US
Laura Carcione - Los Altos CA, US
Gerald Harvey - San Francisco CA, US
Ryan Diestelhorst - Atlanta GA, US
International Classification:
G06F 30/23
G06F 17/13
G06F 30/27
Abstract:
Described here is a method for the discretization of a complex model using computational windows to define the physics, solve type (explicit/implicit), mesh (type/density), and time step used within distinct spatial domains for finite element analysis. The windows can be defined manually or automatically and can be leveraged to reduce the overall computational energy and time required to solve the model.
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Ryan M Diestelhorst from Atlanta, GA, age ~42 Get Report