Inventors:
Edmund Seebauer - Urbana IL, US
Richard Braatz - Urbana IL, US
Michael Jung - Minneapolis MN, US
Rudiyanto Gunawan - Goleta CA, US
Assignee:
The Board of Trustees of the University of Illinois - Urbana IL
International Classification:
H01L 21/425
Abstract:
The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrication of a doped semiconductor structure having a selected dopant concentration depth profile, which provides useful junctions and other device components in microelectronic and nanoelectronic devices, such as transistors in high density integrated circuits. Surface modification in the present invention also allows for control of the concentration and depth profile of defects, such as interstitials and vacancies, in undersaturated semiconductor materials.