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Roshni Biswas

from Milpitas, CA
Age ~43
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Also known as:
Roshni Binstas
Related to:
Shreyash SinhaAvik Sinha, 45Vineesh SinhaChristina ChristianiJuan Morales, 35Shakina Morales, 40Juan Morales, 56Heather M Shakina
Connected to:
Amitabh Biswas, 44Anima R Biswas, 47Aninda C Biswas, 57Aniruddha Biswas, 50Anwesha Biswas, 31Apurba Biswas, 38Arabinda K Biswas, 88Archana Biswas, 72Ashok Biswas, 65Ashutosh Biswas, 46

Roshni Biswas Phones & Addresses

  • Milpitas, CA
  • San Jose, CA
  • Santa Clara, CA
  • Los Angeles, CA
  • Williamsville, NY

Work

Company: University of southern california Aug 2010 Position: Research assistant

Education

School / High School: University of Southern California- Los Angeles, CA 2010 Specialities: PhD in Electrical Engineering

Resumes

Resumes

Roshni Biswas Photo 1

Roshni Biswas Los Angeles, CA

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Work:
University of Southern California

Aug 2010 to 2000
Research Assistant
University of Southern California
Los Angeles, CA
Aug 2011 to Dec 2013
Teaching Assistant
University at Buffalo
Buffalo, NY
Jan 2009 to May 2010
Research Assistant
Siemens India Ltd.
Bangalore, Karnataka
Feb 2008 to Jul 2008
Senior Systems Engineer
Wipro Technologies Ltd
Bangalore, Karnataka
Oct 2005 to Jan 2008
Project Engineer
Education:
University of Southern California
Los Angeles, CA
2010 to 2015
PhD in Electrical Engineering
University at Buffalo, SUNY
Buffalo, NY
2008 to 2010
MS in Electrical Engineering
West Bengal University of Technology
Kolkata, West Bengal
2001 to 2005
BTech in Electronics and Communication Engineering

Publications

Us Patents

Methods Of Determining Scattering Of Radiation By Structures Of Finite Thicknesses On A Patterning Device

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US Patent:
20210271173, Sep 2, 2021
Filed:
May 21, 2021
Appl. No.:
17/326481
Inventors:
- Veldhoven, NL
Yen-Wen LU - Saratoga CA, US
Peng LIU - Cupertino CA, US
Rafael C. HOWELL - Santa Clara CA, US
Roshni BISWAS - San Jose CA, US
Assignee:
ASML NETHERLANDS B.V. - Veldhoven
International Classification:
G03F 7/20
Abstract:
A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
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Roshni Biswas from Milpitas, CA, age ~43 Get Report