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Rosemary T Nettleton

from Rockaway Beach, OR
Age ~62
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Also known as:
Rosemary E Nettleton, Rosemary Ettleton, Nettleton Rosemary
Phone and address:
1435 N 1St Ave, Twin Rocks, OR 97136
Related to:
Betty J Nettleton, 59Pi Y HuangPei Huang, 64Robin StanleyRobin J Kearns, 53Lisa Kaiser, 60
Connected to:
Brian K Nettleton, 58Bruce L Nettleton, 64Charles A Nettleton, 65Christopher D Nettleton, 56Dustin R Nettleton, 41Emma Nettleton, 24Forrest R Nettleton, 77Jean M Nettleton, 61Jordan M Nettleton, 33Joseph B Nettleton, 57

Rosemary Nettleton Phones & Addresses

  • 1435 N 1St Ave, Rockaway Bch, OR 97136
  • Rockaway Beach, OR
  • Portland, OR
  • 10503 22Nd St, Vancouver, WA 98664 (360) 891-8335
  • Lompoc, CA
  • Yakima, WA
  • 10505 NE 53Rd Ave UNIT 25A, Vancouver, WA 98686

Work

Company: Concussion definition consortium - Portland, OR 2011 Position: Bioinformatics consultant

Education

School / High School: Portland Community College- Portland, OR 2004 Specialities: Biotechnology Program

Resumes

Resumes

Rosemary Nettleton Photo 1

Rosemary Nettleton Portland, OR

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Work:
Concussion Definition Consortium
Portland, OR
2011 to 2013
Bioinformatics Consultant
Concussion Definition Consortium
New York, NY
2011 to 2013
Independent Contractor
Oregon Health & Science University
Portland, OR
2004 to 2007
Research Associate
ShinEtsu-America
Vancouver, WA
1997 to 2002
Senior Process Engineer
Education:
Portland Community College
Portland, OR
2004
Biotechnology Program
Washington State University
Pullman, WA
1997
BS in Chemical Engineering
Oregon Health & Science University
Portland, OR
Medical Informatics & Clinical Epidemiology

Publications

Us Patents

Method Of Growing Large-Diameter Dislocation-Free110 Crystalline Ingots

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US Patent:
6514337, Feb 4, 2003
Filed:
Feb 7, 2001
Appl. No.:
09/778373
Inventors:
Rosemary T. Nettleton - Vancouver WA
Robert L. Faulconer - Brush Prairie WA
Aaron W. Johnson - Vancouver WA
Assignee:
SEH America, Inc. - Vancouver WA
International Classification:
C30B 1520
US Classification:
117 13, 117 14, 117 15, 117201, 117202, 117208
Abstract:
A method of growing a crystalline ingot having a 110 orientation, such as a dislocation-free (âDFâ) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a 110 crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2. 5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2. 5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a 110 crystal direction and a diameter of at least about 200 mm.

Method Of Growing Large-Diameter Dislocation-Free 110 Crystalline Ingots

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US Patent:
6652824, Nov 25, 2003
Filed:
Dec 9, 2002
Appl. No.:
10/314719
Inventors:
Rosemary T. Nettleton - Vancouver WA
Robert L. Faulconer - Brush Prairie WA
Aaron W. Johnson - Vancouver WA
Assignee:
SEH America, Inc. - Vancouver WA
International Classification:
C01B 3326
US Classification:
4233282, 117 13, 117 19
Abstract:
A method of growing a crystalline ingot having a 110 orientation, such as a dislocation-free (âDFâ) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a 110 crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2. 5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2. 5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a 110 crystal direction and a diameter of at least about 200 mm.

Method And Apparatus For Treating Discharge Gas From A Czochralski Crystal Growing Chamber Utilizing Water Spray

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US Patent:
6488768, Dec 3, 2002
Filed:
Jul 17, 2001
Appl. No.:
09/907408
Inventors:
Rosemary T. Nettleton - Vancouver WA
Assignee:
SEH America, Inc. - Vancouver WA
International Classification:
C30B 1520
US Classification:
117 13, 117208
Abstract:
A water spray subsystem apparatus and method of treating discharge gas designed for use in the gas discharge zone of a Czochralski crystal growing apparatus. The subsystem composes a structure containing or defining a water spray body, which is capable of providing a water spray into the discharge gas stream from the CZ chamber. The water is supplied into the discharge gas in the form of a spray or a mist in order to provide for intimate contact between the droplets of sprayed water and the discharge gas stream. Contacting the discharge gas stream with the water spray cools the gas stream, causes the reaction of SiO to SiO , and causes the precipitation of cooled SiO and SiC out of the discharge gas stream.
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Rosemary T Nettleton from Rockaway Beach, OR, age ~62 Get Report