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Rosemary U Anthraper

from Richardson, TX
Age ~56

Rosemary Anthraper Phones & Addresses

  • 4608 Deer Valley Ln, Richardson, TX 75082 (972) 889-1869
  • Irving, TX
  • 707 Valley Pkwy, Lewisville, TX 75077 (972) 221-1828
  • Hunt, TX
  • 4608 Deer Valley Ln, Richardson, TX 75082

Work

Position: Production Occupations

Resumes

Resumes

Rosemary Anthraper Photo 1

Rosemary Anthraper

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Rosemary Anthraper Photo 2

Rosemary Anthraper Richardson, TX

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Work:
DRS Technologies - a Finmeccanica Company
Dallas, TX
Jul 2008 to Jan 2013
Senior Manufacturing Engineer - Quality

Texas Instruments
Dallas, TX
Apr 2000 to Jul 2008
Process Engineer

MIC Technology
Richardson, TX
Mar 1999 to Apr 2000
Process Engineer

Johnson & Johnson

Aug 1997 to Feb 1999
Quality Engineer

Education:
Gandhi University
1997
Master of Science in Kerala, India

Texas Woman's University
Denton, TX
Master of Science in Chemistry

Rosemary Anthraper Photo 3

Rosemary Anthraper Richardson, TX

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Work:
DRS Technologies - a Finmeccanica Company

Jul 2008 to 2000
Senior Product/Process Engineer

Texas Instruments
Dallas, TX
Apr 2000 to Jul 2008
Make Member of Technical Staff

MIC Technology
Richardson, TX
Mar 1999 to Apr 2000
Process Engineer - Chemical Processing

Quality EngineerIrving, TX
Aug 1997 to Feb 1999

Education:
Texas Woman's University
Denton, TX
Jan 1994 to May 1997
Masters in Chemistry

Gandhi University
Jun 1990 to May 1992
Masters in Chemistry

Publications

Us Patents

Planarity Of Pixel Mirrors

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US Patent:
8203776, Jun 19, 2012
Filed:
Nov 26, 2008
Appl. No.:
12/324259
Inventors:
Rosemary Urmese Anthraper - Richardson TX, US
Lucius M. Sherwin - Plano TX, US
Irma Izzeth Annillo - Rowlett TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G02B 26/08
US Classification:
3592241, 359900, 438 50, 438622, 216 17
Abstract:
A method of forming an electronic device includes providing a patterned lower metal layer over a substrate and a first sacrificial layer there between. A second sacrificial layer is formed over the metal layer, and a portion thereof is removed. A third sacrificial layer is formed over the second sacrificial layer, and an upper metal layer is formed over the third sacrificial layer. A portion of the upper metal layer is removed, and the first, second and third sacrificial layers are removed.

Etching Method For Use In Deep-Ultraviolet Lithography

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US Patent:
20100028810, Feb 4, 2010
Filed:
Aug 4, 2008
Appl. No.:
12/185197
Inventors:
Ronald Charles Roth - McKinney TX, US
Georgina Marie Park - Dallas TX, US
Rosemary Urmese Anthraper - Richardson TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G03F 7/00
G03F 7/20
US Classification:
430315, 430311, 430313, 430324, 430323
Abstract:
In a lithography process using an ultraviolet process, the applied ultraviolet resist can be removed by intentionally condensing the ultraviolet resist before removing the ultraviolet resist.
Rosemary U Anthraper from Richardson, TX, age ~56 Get Report