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Ronald J Naster

from Liverpool, NY
Age ~81
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Also known as:
Ronald A Naster, Jeanette M Naster, Ron J Naster, Jeanette Naster Ft, Rachel Naster
Phone and address:
3952 Bowdoin Ln, Liverpool, NY 13090
(315) 451-7494
Related to:
Jeanette M Naster, 69Michael T Naster, 47Michael T NasterJennifer M Naster, 45
Connected to:
Nikola Nastevski, 28Vince Nasti, 50Dragan Nastic, 45Ivica N Nastic, 71Linda R Nastick, 70Kathleen M Nasto, 69Kristen N Nasto, 48Laura Nasto, 38Robert E Nasto, 79Paul T Nastoff, 55

Ronald Naster Phones & Addresses

  • 3952 Bowdoin Ln, Liverpool, NY 13090 (315) 451-7494 (607) 451-7494
  • Camillus, NY
  • Syracuse, NY
  • Paola, KS
  • 3952 Bowdoin Ln, Liverpool, NY 13090 (315) 451-7494

Work

Company: Syracuse university - college of visual and performing arts Position: None

Education

Degree: Graduate or professional degree

Industries

Higher Education

Resumes

Resumes

Ronald Naster Photo 1

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Industry:
Higher Education
Work:
Syracuse University - College of Visual and Performing Arts
None

Publications

Us Patents

Digital Phase Bit For Microwave Operation

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US Patent:
44713304, Sep 11, 1984
Filed:
Nov 1, 1982
Appl. No.:
6/438028
Inventors:
Ronald J. Naster - Liverpool NY
John A. Windyka - Liverpool NY
Wendell M. Kong - Liverpool NY
Conrad E. Nelson - Camillus NY
Assignee:
General Electric Company - Syracuse NY
International Classification:
H01P 118
H01P 1185
US Classification:
333164
Abstract:
A digital phase bit is provided for microwave operation, comprising a pair of FET switches and at least three transmission lines. The FETs when operated in a digital switching mode, present a small impedance when on and a high impedance when off. Each of two of the transmission lines exhibits a series inductive impedance over the operating frequency band and shunts a FET switch, two shunt combinations being interconnected by the third transmission line. When the switches are on, the signal path is effectively through the FET switch alone (and not branched) and a reference phase shift is produced. When the FET switches are off, a signal applied to the phase bit branches at each shunt combination. The inductive reactance of the transmission line and the capacitive reactance of the FET switch of each shunt combination then jointly produce a resonantly enhanced reactance over the band, causing a reflection and a maximum differential phase shift. The reflections are cancelled at the input port by a suitable choice of length and impedance for the third transmission line.

Lumped Element Digital Phase Shifter Bit

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US Patent:
H9547, Aug 6, 1991
Filed:
Jul 5, 1990
Appl. No.:
7/548653
Inventors:
Mark R. Lang - Fayetteville NY
Ronald J. Naster - Liverpool NY
Conrad E. Nelson - Jensen Beach FL
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01P 300
US Classification:
333164
Abstract:
Digital phase shifter bits of predetermined phase shift capability and lumped element network component fabrication arrangement are described. A variety of phase shifter bits including the capability of eleven and one-quarter, twenty-two and one-half, forty-five, ninety, and one hundred eighty degrees of phase shift are included. Also included are a number of high-pass/low-pass and switching transistor inclusive phase shifter bit arrangements. Both electrical schematic diagram and integrated circuit embodiments of the phase shifting networks are also disclosed.

Method For Fabricating Silicon-On-Sapphire Monolithic Microwave Integrated Circuits

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US Patent:
44184700, Dec 6, 1983
Filed:
Oct 21, 1981
Appl. No.:
6/313378
Inventors:
Ronald J. Naster - Syracuse NY
Simon A. Zaidel - Liverpool NY
Ying-Chen Hwang - Liverpool NY
Earl L. Parks - Liverpool NY
William R. Cady - Scotia NY
Assignee:
General Electric Company - Syracuse NY
International Classification:
H01L 2980
H01L 2702
H01L 2904
US Classification:
29577C
Abstract:
A fabrication technique for monolithic microwave integrated circuits employs silicon-on-sapphire wafers. Active and passive elements are formed together in a series of implant and deposition steps. Electrically isolated islands of semiconductor material are defined upon the substrate. Multiple metallization deposits are employed to simultaneously interconnect the individual circuit elements and form passive elements upon the integrated circuit. The technique allows mass production of integrated circuits with considerable raw material savings.

Electronically Reconfigurable Digital Pad Attenuator Using Segmented Field Effect Transistors

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US Patent:
50498410, Sep 17, 1991
Filed:
Jul 11, 1990
Appl. No.:
7/551067
Inventors:
Paul D. Cooper - Baldwinsville NY
Paul A. Bourdelais - Liverpool NY
Anthony W. Jacomb-Hood - North Syracuse NY
John A. Windyka - Liverpool NY
David R. Helms - Liverpool NY
Ronald J. Naster - Liverpool NY
Assignee:
General Electric Company - Syracuse NY
International Classification:
H03H 1124
US Classification:
333 81R
Abstract:
An electronically reconfigurable digital pad attenuator is disclosed using selectively controlled segmented field effect transistors in a passive, non-gain state as the principal impedance elements. The attenuator may be fabricated in the monolithic microwave integrated circuit (MMIC) format with a segmented gate field effect transistor being connected in each of the separate branches of a Pi pad, Tee pad, or Bridged Tee pad attenuator configuration. The individual FET segments are maintained in a high admittance "ON" state or a low admittance "OFF" state in accordance with the binary control potentials applied to the gate of each segment, the principal electrodes being maintained at a zero potential difference. The attenuation then becomes a function of the binary gate potentials applied to each segment and assumes one of a set of well-defined discrete values. The attenuator consumes minimum power, provides attenuation steps that are independent of GaAs MMIC fabrication process tolerances, i. e.

Continuously Variable Phase Shifting Element Comprised Of Interdigitated Electrode Mesfet

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US Patent:
46059121, Aug 12, 1986
Filed:
Apr 26, 1984
Appl. No.:
6/604192
Inventors:
Ronald J. Naster - Liverpool NY
John A. Windyka - Liverpool NY
Allen R. Wolfe - Sauquoit NY
Assignee:
General Electric Company - Syracuse NY
International Classification:
H03H 1120
US Classification:
333164
Abstract:
A bidirectional continuously variable phase shifting element is described for incorporation in a monolithic microwave integrated circuit (a circuit which combines both passive and active circuit elements). The preferred active device for use in the phase shifting element is a variable resistance field effect transistor (MESFET), while the preferred passive circuit element is a short transmission line interconnecting the principal electrodes. A variable phase shift for an RF signal passing through the phase shifting element is obtained by adjusting the gate potential of the MESFET between full conduction and nonconduction. The change in conductivity of the MESFET causes the serial impedance of the phase shifting element to vary from a substantially resistive impedance to a substantially capacitively reactive impedance arrangement, which requires only a single active device, is applicable to frequencies generally above 1 GHz, and provides phase shifts up to 45. degree. with reasonable insertion loss and return loss.
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Ronald J Naster from Liverpool, NY, age ~81 Get Report