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Richard E Roybal

from Roanoke, TX
Age ~53
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Also known as:
Richard Eric Roybal, Robert Edward Roybal, Edward Edward Roybal, Robert E Roybal, Edward R Roybal, Ruchard E Roybal, Rick Roybal, Richard Reybal
Related to:
Alphonzo Ardoin, 38Rebecca RoybalElizabeth Price, 99Roger Smith, 89Kristin Roybal
Connected to:
Adam W Roybal, 58Amy Roybal, 40Angelina A Roybal, 43Annette S Roybal, 56Anthony E Roybal, 40Benses Roybal, 70Brandi N Roybal, 53Brandy L Roybal, 48Briana A Roybal, 36Carla I Roybal, 51

Richard Roybal Phones & Addresses

  • Roanoke, TX
  • Euless, TX
  • Thornton, CO
  • 6800 Pleasant Run Rd, Colleyville, TX 76034 (817) 581-9152
  • 12300 Macaroon Ln, Keller, TX 76248 (817) 741-6859
  • Fort Worth, TX
  • Colorado Springs, CO
  • Grapevine, TX

Resumes

Resumes

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Richard Roybal

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Richard Roybal

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Richard Roybal

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Location:
Dallas/Fort Worth Area
Industry:
Oil & Energy
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Richard Roybal

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Location:
United States
Richard Roybal Photo 8

Student At Parker College Of Chiropractic

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Location:
Dallas/Fort Worth Area
Industry:
Health, Wellness and Fitness

Business Records

Name / Title
Company / Classification
Phones & Addresses
Richard R. Roybal
Incorporator
PURE BRED CONSTRUCTION, INC

Publications

Us Patents

Radiation Hardened Integrated Circuit

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US Patent:
20130105904, May 2, 2013
Filed:
Nov 1, 2011
Appl. No.:
13/286293
Inventors:
RICHARD G. ROYBAL - ARLINGTON TX, US
SHARIQ ARSHAD - MURPHY TX, US
SHAOPING TANG - ALLEN TX, US
JAMES FRED SALZMAN - ANNA TX, US
Assignee:
TEXAS INSTRUMENTS INCORPORATED - Dallas TX
International Classification:
H01L 27/092
H01L 21/8238
US Classification:
257369, 438199, 257E21632, 257E27062
Abstract:
A method of forming an integrated circuit (IC) includes providing a substrate having a topside semiconductor surface, wherein the topside semiconductor surface includes at least one of N+ buried layer regions and P+ buried layer regions. An epitaxial layer is grown on the topside semiconductor surface. Pwells are formed in the epitaxial layer. Nwells are formed in the epitaxial layer. NMOS devices are formed in and over the pwells, and PMOS devices are formed in and over the nwells.

Radiation Induced Diode Structure

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US Patent:
20140124895, May 8, 2014
Filed:
Nov 6, 2013
Appl. No.:
14/073777
Inventors:
- Dallas TX, US
Richard Guerra ROYBAL - Denton TX, US
Randolph William KAHN - McKinney TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 29/73
H01L 21/265
H01L 29/66
US Classification:
257592, 438350
Abstract:
A semiconductor device containing an NPN bipolar junction transistor may be formed by forming a p-type radiation induced diode structure (RIDS) region in an intrinsic p-type base region of the NPN bipolar junction transistor at a boundary of the intrinsic p-type base region with a dielectric layer over a substrate of the semiconductor device, between an emitter of the NPN bipolar junction transistor and an extrinsic p-type base region of the NPN bipolar junction transistor. The p-type RIDS region has a doping density high enough to prevent inversion of a surface of the p-type RIDS region adjacent to the dielectric layer when trapped charge is accumulated in the dielectric layer, while the intrinsic p-type base region may invert from the trapped charge forming the radiation induced diode structure. The p-type RIDS region is separated from the emitter and from the extrinsic base region by portions of the intrinsic base region.
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Richard E Roybal from Roanoke, TX, age ~53 Get Report