Richard C Joy

44142935, Nov 8, 1983

Sep 20, 1982

6/420052

Richard W. Joy - Santa Clara CA
David F. Smith - Boulder Creek CA

The United States of America as represented by the United States
Department of Energy - Washington DC

H01M 412

429 27

A consumable metal anode which is used in refuelable electrochemical cells and wherein at least a peripheral edge portion of the anode is protected against a corrosive alkaline environment of the cell by the application of a thin metal coating, the coating being formed of metals such as nickel, silver, and gold.

44546467, Jun 19, 1984

Aug 27, 1981

6/296929

Richard C. Joy - Beacon NY
Bernard M. Kemlage - Kingston NY
John L. Mauer - South Kent CT

International Business Machines Corporation - Armonk NY

H01L 2176

29576W

An integrated circuit structure having substrate contacts formed as a part of the isolation structure and method for making the same is described. The integrated circuit structure is composed of a monocrystalline silicon body having a pattern of dielectric isolation surrounding regions of the monocrystalline silicon in the body. The dielectric isolation pattern includes a recessed dielectric portion at and just below the surface of the integrated circuit and a deep portion which extends from the side of the recessed dielectric portion opposite to that portion at the surface of said body into the monocrystalline silicon body. A highly doped polycrystalline silicon substrate contact is located within the deep portion of the pattern of isolation. At certain locations the deep portion of the pattern extends to the surface of the silicon body where interconnection metallurgy can electrically contact the polycrystalline silicon so as to form a substrate contact to the bottom of the deep portion of the isolation where the contact electrically connects to the silicon body. Any of a variety of integrated circuit device structures may be incorporated within the monocrystalline silicon regions.

44546475, Jun 19, 1984

Aug 27, 1981

6/296933

Richard C. Joy - Beacon NY
Bernard M. Kemlage - Kingston NY
John L. Mauer - South Kent CT

International Business Machines Corporation - Armonk NY

H01L 2176

29576W

An integrated circuit structure having substrate contacts formed as a part of the isolation structure and the method to form such structure is described. The integrated circuit structure is composed of a monocrystalline silicon body having a pattern of dielectric isolation surrounding regions of the monocrystalline silicon in the body. The dielectric isolation pattern includes a recessed dielectric portion at and just below the surface of the integrated circuit and a deep portion which extends through the recessed dielectric portion and extends further into the monocrystalline silicon body than the recessed portion. A highly doped polycrystalline silicon substrate contact is located within the deep portion of the pattern of isolation. The substrate contact extends from the surface of the pattern of isolation down to the bottom of the deep portion of the isolation where the contact electrically connects to the silicon body. Any of a variety of integrated circuit device structures may be incorporated within the monocrystalline silicon regions.

40539253, Oct 11, 1977

Aug 7, 1975

5/602710

Peter Burr - Winchester, EN
Richard C. Joy - Hopewell Junction NY
James F. Ziegler - Putnam Valley NY

IBM Corporation - Armonk NY

H01L 2176
H01L 21265
H01L 29167
H01L 2932

357 64

The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.

40897125, May 16, 1978

May 17, 1977

5/797895

Richard C. Joy - Hopewell Junction NY
Ingrid E. Magdo - Hopewell Junction NY
Alfred Phillips - Wappingers Falls NY

International Business Machines Corporation - Armonk NY

H01L 2120
H01L 2978

148175

An improved field effect transistor device in a monocrystalline semiconductor body provided with source and drain regions and a gate electrode disposed over the channel between the source and drain regions wherein at least the drain region is formed of a first region where the impurity concentration increases with depth with the peak concentration being spaced inwardly from the major surface, and a second region located within the first region having a peak impurity concentration at the major surface. The drain region structure in operation promotes the current flow between the source and drain to flow deeper in the channel region and spaced from the gate dielectric layer. In the method for forming the field effect transistor, an impurity is introduced into the semiconductor body underlying at least the ultimate drain region, an epitaxial semiconductor layer deposited, and a second impurity region formed over the first region to form the drain contact. In an alternate embodiment of the method for forming a field effect transistor, a first ion implantation is formed in the drain region, such that the peak impurity concentration is located well within the body spaced from the surface thereof, and a second ion implantation, or diffusion, performed forming the source and also the ohmic contact for the drain which is located over the first region and within the first implanted region.

43894666, Jun 21, 1983

Jun 3, 1981

6/270113

Richard W. Joy - Santa Clara CA

The United States of America as represented by the United States
Department of Energy - Washington DC

H01M 802
H01M 818

429 27

This invention is directed to a metal-air fuel cell where the consumable metal anode is movably positioned in the cell and an expandable enclosure, or bladder, is used to press the anode into contact with separating spacers between the cell electrodes. The bladder may be depressurized to allow replacement of the anode when consumed.

45606269, Dec 24, 1985

Sep 20, 1982

6/420053

Richard W. Joy - Santa Clara CA

The United States of America as represented by the United States
Department of Energy - Washington DC

H01M 802
H01M 818

429 27

A rapidly refuelable dual cell of an electrochemical type wherein a single anode cooperates with two cathodes and wherein the anode has a fixed position and the cathodes are urged toward opposite faces of the anodes at constant and uniform force. The associated cathodes are automatically retractable to permit the consumed anode remains to be removed from the housing and a new anode inserted between the two cathodes.

41546261, May 15, 1979

Feb 24, 1978

5/881095

Richard C. Joy - Hopewell Junction NY
Ingrid E. Magdo - Hopewell Junction NY
Alfred Phillips - Wappingers Falls NY

International Business Machines Corporation - Armonk NY

H01L 2120
H01L 21263

148 15

An improved field effect transistor device in a monocrystalline semiconductor body provided with source and drain regions and a gate electrode disposed over the channel between the source and drain regions wherein at least the drain region is formed of a first region where the impurity concentration increases with depth with the peak concentration being spaced inwardly from the major surface, and a second region located within the first region having a peak impurity concentration at the major surface. The drain region structure in operation promotes the current flow between the source and drain to flow deeper in the channel region and spaced from the gate dielectric layer. In the method for forming the field effect transistor, an impurity is introduced into the semiconductor body underlying at least the ultimate drain region, an epitaxial semiconductor layer deposited, and a second impurity region formed over the first region to form the drain contact. In an alternate embodiment of the method for forming a field effect transistor, a first ion implantation is formed in the drain region, such that the peak impurity concentration is located well within the body spaced from the surface thereof, and a second ion implantation, or diffusion, performed forming the source and also the ohmic contact for the drain which is located over the first region and within the first implanted region.