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Reto A Furler

from San Jose, CA
Age ~68
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Also known as:
Reto Adrian Furler, Reto Living Furler, Reto Brenda Furler, Reto Brenda Ansbro Furler, Reto B Furler, Reto R Furler, Adrian Furler Reto, Furler Reto
Related to:
Brenda L Ansbro, 63
Connected to:
Franklin J Furlett, 74Jennifer L Furley, 51Patrick Furley, 27Susan Furley, 65Richard S Furlin, 57Robert J Furlin, 89Charmaine Furline, 47Theodore F Furlipa, 104Terilynn L Furll, 61Aileen M Furlong, 55

Reto Furler Phones & Addresses

  • San Jose, CA
  • 534 Queens Rd, Alameda, CA 94501 (510) 865-2617
  • Berkeley, CA
  • 1352 Ballena Blvd APT 204, Alameda, CA 94501

Work

Company: The leukemia & lymphoma society Nov 2016 to May 2017 Position: Volunteer to the leukemia and lymphoma society

Education

Degree: Doctorates, Doctor of Philosophy Specialities: Energy, Physics

Skills

R&D • Solar Energy • Manufacturing • Photovoltaics • Semiconductors • Cvd • Failure Analysis • Metrology • Materials Science • Characterization • Process Engineering • Spc • Jmp • Optics • Silicon • Lean Manufacturing • Process Simulation • Solar Cells • Materials • Start Ups • Engineering • Physics • Cross Functional Team Leadership • Six Sigma • Semiconductor Industry • Renewable Energy • Engineering Management • Product Management • Electronics • Pecvd • Nanotechnology • Simulations • Ic • Alloys • Plasma Physics • Total Cost of Ownership • Cleantech • Powder X Ray Diffraction • Fmea • Process Integration • Etching • Solidworks • Tin • Mocvd • Labview • Scanning Electron Microscopy • Afm • Electrical Engineering • Mechanical Engineering • Matlab

Languages

German

Interests

Health • Animal Welfare • Environment • Science and Technology

Industries

Semiconductors

Resumes

Resumes

Reto Furler Photo 1

Senior Member Of Technical Staff

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
The Leukemia & Lymphoma Society Nov 2016 - May 2017
Volunteer To the Leukemia and Lymphoma Society
Nanosolar Jun 2005 - Aug 2010
Senior Manufacturing Engineer Thin Films
Alta Devices Jun 2005 - Aug 2010
Senior Member of Technical Staff
Optivalues 2004 - 2005
Engineer
Southwall Technologies 1994 - 2003
Engineer and Scientist and R and D Lab Manager
Skills:
R&D
Solar Energy
Manufacturing
Photovoltaics
Semiconductors
Cvd
Failure Analysis
Metrology
Materials Science
Characterization
Process Engineering
Spc
Jmp
Optics
Silicon
Lean Manufacturing
Process Simulation
Solar Cells
Materials
Start Ups
Engineering
Physics
Cross Functional Team Leadership
Six Sigma
Semiconductor Industry
Renewable Energy
Engineering Management
Product Management
Electronics
Pecvd
Nanotechnology
Simulations
Ic
Alloys
Plasma Physics
Total Cost of Ownership
Cleantech
Powder X Ray Diffraction
Fmea
Process Integration
Etching
Solidworks
Tin
Mocvd
Labview
Scanning Electron Microscopy
Afm
Electrical Engineering
Mechanical Engineering
Matlab
Interests:
Health
Animal Welfare
Environment
Science and Technology
Languages:
German

Publications

Us Patents

Vacuum Deposition Of Bus Bars Onto Conductive Transparent Films

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US Patent:
6204480, Mar 20, 2001
Filed:
Feb 1, 2000
Appl. No.:
9/495464
Inventors:
Floyd E. Woodard - San Jose CA
Reto Furler - Alameda CA
Assignee:
Southwall Technologies, Inc. - Palo Alto CA
International Classification:
B60L 102
US Classification:
219203
Abstract:
Vacuum deposition processes such as sputter-depositing are employed to deposit electrically conductive bus bars onto thin film transparent conductor sheets. These assemblies provide efficient and durable electrical connections to the conductor sheets which can be laminated into glazing structures such as automotive windshields to provide resistance heating for defogging and deicing or the provide an electrical connection for in-window antennas and in window radiation shields.

Wavelength Selective Applied Films With Glare Control

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US Patent:
60348135, Mar 7, 2000
Filed:
Aug 24, 1998
Appl. No.:
9/138823
Inventors:
Floyd Eugene Woodard - Belmont CA
David A. Jones - Mountain View CA
Reto Furler - Alameda CA
Assignee:
Southwall Technologies, Inc. - Palo Alto CA
International Classification:
F21V 904
G02B 528
US Classification:
359360
Abstract:
A solar control film having low visible light transmittance and low visible light reflectance is comprised of a first sheet of transparent substrate material having deposited thereon a solar-load-reduction film for preferentially reducing infrared light energy transmitted through the film, and a second sheet of transparent substrate material having deposited thereon a thin, transparent film of metal effective to partially block light transmittance, wherein the first sheet of transparent substrate and the second sheet of transparent substrate are separated by an optically massive layer that prevents the constructive and destructive interference of reflected light. A preferred embodiment of a solar control film includes, in order, a pressure-sensitive adhesive layer, a polyethylene terephthalate layer, a Fabry-Perot interference filter layer, an adhesive layer, a grey metal layer, another polyethylene terephthalate layer, and a hardcoat layer. The preferred solar control film provides wavelength selectivity in the infrared range while controlling visible light transmission and minimizing visual light reflectance.

Laser-Textured Thin-Film Semiconductors By Melting And Ablation

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US Patent:
20220190172, Jun 16, 2022
Filed:
Mar 4, 2022
Appl. No.:
17/687026
Inventors:
- Rochester Hills MI, US
Daniel Guilford PATTERSON - Morgan Hill CA, US
Reto Adrian FURLER - San Jose CA, US
Andrew James RITENOUR - San Jose CA, US
International Classification:
H01L 31/0236
H01L 31/056
H01L 31/0304
H01L 31/18
Abstract:
A photovoltaic device and a method of making the photovoltaic device are disclosed. The photovoltaic device may include a semiconductor layer epitaxially grown using a compound semiconductor material, such as a group III-V semiconductor material, wherein a surface of the semiconductor layer is textured via one or more laser pulses of a laser. The photovoltaic device may also include a dielectric layer deposited over the textured surface of the semiconductor layer, and a back metal reflector provided on the dielectric layer. The textured surface extends a path of light traveling through the photovoltaic device to increase absorption of the light within the photovoltaic device.

Sputtered Then Evaporated Back Metal Process For Increased Throughput

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US Patent:
20200350460, Nov 5, 2020
Filed:
Apr 30, 2019
Appl. No.:
16/399012
Inventors:
- Sunnyvale CA, US
Reto Adrian FURLER - San Jose CA, US
Hasti MAJIDI - San Jose CA, US
Kirsten Sydney HESSLER - Menlo Park CA, US
International Classification:
H01L 31/18
H01L 31/0216
H01L 31/0304
H01L 31/0687
H01L 31/0735
H01L 31/0725
H01L 31/056
H01L 31/054
Abstract:
A method is described that includes sputtering multiple layers on a back surface of the photovoltaic structure, the photovoltaic structure being made of at least one group III-V semiconductor material, and evaporating, over the multiple layers, one or more additional layers including a metal layer, the back metal structure being formed by the multiple layers and the additional layers. A photovoltaic device is also described that includes a back metal structure disposed over a back surface of a photovoltaic structure made of a group III-V semiconductor material, the back metal structure including one or more evaporated layers disposed over multiple sputtered layers, the one or more evaporated layers including a metal layer. By allowing evaporation along with sputtering, tool size and costs can be reduced, including minimizing a number of vacuum breaks. Moreover, good yield and reliability, such as reducing dark line defects (DLDs), can also be achieved.

Laser-Textured Thin-Film Semiconductors By Melting And Ablation

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US Patent:
20200321480, Oct 8, 2020
Filed:
Apr 2, 2019
Appl. No.:
16/373305
Inventors:
- Sunnyvale CA, US
Daniel Guilford PATTERSON - Morgan Hill CA, US
Reto Adrian FURLER - San Jose CA, US
Andrew James RITENOUR - San Jose CA, US
International Classification:
H01L 31/0236
H01L 31/0304
H01L 31/18
H01L 31/056
Abstract:
A photovoltaic device and a method of making the photovoltaic device are disclosed. The photovoltaic device may include a semiconductor layer epitaxially grown using a compound semiconductor material, such as a group III-V semiconductor material, wherein a surface of the semiconductor layer is textured via one or more laser pulses of a laser. The photovoltaic device may also include a dielectric layer deposited over the textured surface of the semiconductor layer, and a back metal reflector provided on the dielectric layer. The textured surface extends a path of light traveling through the photovoltaic device to increase absorption of the light within the photovoltaic device.
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Reto A Furler from San Jose, CA, age ~68 Get Report