Search

Renato Guida Phones & Addresses

  • 620 Church St, Wynantskill, NY 12198 (518) 283-4415 (518) 286-2838
  • 147 3Rd St, Troy, NY 12180
  • 20033 Satin Leaf Ave, Tampa, FL 33647 (201) 936-5945
  • Rensselaer, NY
  • 620 Church St, Wynantskill, NY 12198 (518) 283-4415

Publications

Us Patents

Method Of Reducing Shear Stresses On Ic Chips And Structure Formed Thereby

View page
US Patent:
6429042, Aug 6, 2002
Filed:
Apr 4, 2000
Appl. No.:
09/542815
Inventors:
Renato Guida - Wynantskill NY
Assignee:
General Electric Company - Schenectady NY
International Classification:
H01L 2144
US Classification:
438106, 438107, 257620, 257622, 257623, 257626, 257780, 257781
Abstract:
A method and structure for reducing mechanical shear stresses induced in an IC chip by metal interconnect lines that interconnect the chip with its surrounding substrate. A dielectric layer overlies at least a portion of the substrate and a peripheral surface region of the chip. The lines are formed on the dielectric layer and are electrically interconnected with contact pads on the peripheral surface region of the chip, i. e. , beneath the dielectric layer. At least one trench is formed in the dielectric layer and surrounds the peripheral surface region of the chip. The lines traverse the trench so as to have nonplanar portions within the trench. The trenches and the nonplanar portions of the lines increase the expansion/contraction capability of the dielectric layer and lines in a region sufficiently close to where the lines are interconnected to the contact pads, such that shear stresses at critical points near the line-pad connections are significantly reduced.

Method Of Reducing Shear Stresses On Ic Chips And Structure Formed Thereby

View page
US Patent:
6548896, Apr 15, 2003
Filed:
May 20, 2002
Appl. No.:
10/150868
Inventors:
Renato Guida - Wynantskill NY
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H01L 2334
US Classification:
257728, 257735, 333247
Abstract:
A method and structure for reducing mechanical shear stresses induced in an IC chip by metal interconnect lines that interconnect the chip with its surrounding substrate. A dielectric layer overlies at least a portion of the substrate and a peripheral surface region of the chip. The lines are formed on the dielectric layer and are electrically interconnected with contact pads on the peripheral surface region of the chip, i. e. , beneath the dielectric layer. At least one trench is formed in the dielectric layer and surrounds the peripheral surface region of the chip. The lines traverse the trench so as to have nonplanar portions within the trench. The trenches and the nonplanar portions of the lines increase the expansion/contraction capability of the dielectric layer and lines in a region sufficiently close to where the lines are interconnected to the contact pads, such that shear stresses at critical points near the line-pad connections are significantly reduced.

Two-Stage Valve Suitable As High-Flow High-Pressure Microvalve

View page
US Patent:
6557820, May 6, 2003
Filed:
May 22, 2001
Appl. No.:
09/862809
Inventors:
Todd Garrett Wetzel - Niskayuna NY
Matthew Christian Nielsen - Schenectady NY
Renato Guida - Wynantskill NY
James Wilson Rose - Guilderland NY
Laura Jean Meyer - Schenectady NY
Assignee:
Lockheed Martin Corporation - Bethesda MD
International Classification:
F16K 3112
US Classification:
251 3002, 251 3005, 251 31, 251 611, 251331, 13759616
Abstract:
A two-stage valve for controlling the flow of gas from a pressurized gas supply with an upper main body including a cavity; a lower main body with at least one flow exhaust passage forming a primary flow path through the two-stage valve; a pre-stressed diaphragm sandwiched between the upper and lower main bodies, and pressure control capability for controlling the pressure in the cavity. A secondary flow path exists from the pressurized gas supply through the lower main body, through the upper main body, and terminating in the cavity in the upper main body. A first valve is installed in the secondary flow path to open and close the flow of gas from the pressurized gas supply to the cavity. A second valve installed in an exhaust passage in the upper main body allows the pressure in the cavity to exhaust to the environment. When the second valve is closed, the pressure in the cavity in the upper main body can be increased to lower the pre-stressed diaphragm. Raising and lowering of the pressure in the cavity causes the pre-stressed diaphragm to open and close the flow of gas from the pressurized gas supply through the primary flow path of the two-stage valve.

Fiber Optic Prism Coupler, Coupling Arrangement And Fabrication Method

View page
US Patent:
6560385, May 6, 2003
Filed:
May 24, 2001
Appl. No.:
09/681715
Inventors:
Renato Guida - Wynantskill NY
Matthew Christian Nielsen - Schenectady NY
Assignee:
General Electric Company - Niskayuna NY
International Classification:
G02B 634
US Classification:
385 36, 385 31, 359834, 359837
Abstract:
An optical coupler comprises a fiber optic prism (FOP) comprising first, second, and third side surfaces, the FOP being adapted to receive light through the first side surface, reflect the received light from the third side surface, and transmit the reflected light through the second side surface. The FOP may be used in an optical coupling arrangement comprising a substrate including a light element and a wave guide overlying the substrate, with the optical being situated such that one of the first and second side surfaces is adjacent the light element and the other of the first and second side surfaces is adjacent the wave guide.

System For Fabricating Anti-Scatter X-Ray Grid

View page
US Patent:
6733266, May 11, 2004
Filed:
Aug 15, 2000
Appl. No.:
09/639636
Inventors:
Renato Guida - Wynantskill NY
James Wilson Rose - Guilderland NY
Kenneth Paul Zarnoch - Scotia NY
Gary John Thumann - Oconomowoc WI
Assignee:
General Electric Company - Niskayuna NY
International Classification:
B29C 3508
US Classification:
4251744, 264400, 264482
Abstract:
A method for fabricating a substantially transparent polymer substrate for an anti-scatter x-ray grid for medical diagnostic radiography includes positioning a phase mask between the substrate and a high power laser; providing a laser beam from the laser; conditioning the laser beam; ablating a first portion the substrate through the phase mask with the conditioned laser beam; and moving the substrate; and ablating a second portion of the substrate through the phase mask with the conditioned laser beam.

High Pressure, High Speed Actuator

View page
US Patent:
6774539, Aug 10, 2004
Filed:
Sep 23, 2002
Appl. No.:
10/252886
Inventors:
Renato Guida - Wynantskill NY
Assignee:
Lockheed Martin Corporation - Bethesda MD
International Classification:
H01L 4108
US Classification:
310328
Abstract:
An actuator for applying an actuating force through a total displacement. The actuator includes: an actuator body; n piezo members supported by the body where n is an integer greater than or equal to two, each of the piezo members generating a force and a displacement upon application of a voltage thereon; and n-1 levers rotatably disposed in the body and each having first and second ends corresponding to two of the n piezo members such that the displacements of the n piezo members are accumulated to generate the total displacement at the nth piezo member. Preferably, at least one of the n-1 levers are rotatably disposed in the body such that the displacement from one of the n piezo members acting on the first end of the at least one of the n-1 levers is amplified at the second end of the at least one of the n-1 levers.

Two-Stage Valve Suitable As High-Flow High-Pressure Microvalve

View page
US Patent:
6830229, Dec 14, 2004
Filed:
Feb 28, 2003
Appl. No.:
10/376150
Inventors:
Todd Garrett Wetzel - Niskayuna NY
Mathew Christian Nielsen - Schenectady NY
Renato Guida - Wynantskill NY
James Wilson Rose - Guilderland NY
Laura Jean Meyer - Schenectady NY
Assignee:
Lockheed Martin Corporation - Bethesda MD
International Classification:
F16K 3112
US Classification:
251 3002, 251 3005, 251 31, 251 611, 251331, 13759616
Abstract:
A two-stage valve for controlling the flow of fluid from a pressurized fluid supply with an upper main body including a cavity with a contoured inner surface; a lower main body with at least one flow exhaust passage forming a primary flow path through the two-stage valve; a pre-stressed diaphragm sandwiched between the upper and lower main bodies, and pressure control capability for controlling the pressure in the cavity. A first valve opens and closes the flow of gas from the pressurized gas supply to the cavity. A second valve allows the pressure in the cavity to exhaust to the environment. Raising and lowering of the pressure in the cavity causes the pre-stressed diaphragm to open and close the flow of gas from the pressurized gas supply through the primary flow path of the two-stage valve. The design is suitable as a microvalve using Micro-Electro-Mechanical Systems (MEMS) concepts.

Microelectromechanical High Pressure Gas Microvalve

View page
US Patent:
6883774, Apr 26, 2005
Filed:
Oct 21, 2002
Appl. No.:
10/277028
Inventors:
Matthew C. Nielsen - Schenectady NY, US
Laura J. Meyer - Schenectady NY, US
Todd G. Wetzel - Niskayuna NY, US
Stanton E. Weaver - Northville NY, US
Jeffrey B. Fortin - Niskayuna NY, US
Renato Guida - Wynantskill NY, US
Assignee:
Lockheed Martin Corporation - Bethesda MD
International Classification:
F16K007/12
US Classification:
251 11, 251331
Abstract:
A microvalve and a method of forming a microvalve. The microvalve comprises first and second layers, a diaphragm member and a switching means. The first and second layers are secured together to form a valve body that forms an inlet opening for receiving fluid, an outlet opening for conducting fluid from the valve body, and a flow channel for conducting fluid from the inlet to the outlet. The diaphragm is disposed between the layers, and is movable between open and closed positions. In these position, the diaphragm, respectively, allows and blocks the flow of fluid from the inlet to the flow channel. The diaphragm is biased to the closed position, and moves from the closed position to the open position when the pressure of fluid in the inlet reaches a preset value. The switching means is connected to the valve body for moving the diaphragm to the closed position against the pressure of fluid in the inlet. Preferably, the microvalve is constructed out of SiC and stainless steel materials, allowing the microvalve to be used in a harsh environment.
Renato J Guida from Wynantskill, NY, age ~82 Get Report