Reid A Mickelsen

RE319686, Aug 13, 1985

Jun 14, 1984

6/620637

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

The Boeing Company - Seattle WA

H01L 3106
H01L 3118

136260

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. 0. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U. S.

43352669, Jun 15, 1982

Dec 31, 1980

6/221761

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

The Boeing Company - Seattle WA

H01L 3106
H01L 3118

136260

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U. S.

45230510, Jun 11, 1985

Sep 27, 1983

6/536395

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

The Boeing Company - Seattle WA

H01L 3106
H01L 3118

136260

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

43924514, Jul 12, 1983

Jul 2, 1981

6/278343

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

The Boeing Company - Seattle WA

C23C 1310

118690

Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. 0. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.