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Ranjana Pandya

from New Paltz, NY
Age ~64
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Also known as:
Rangana Pandya, Ranjana Biswas
Phone and address:
3 Kaegill Ln, New Paltz, NY 12561
(845) 255-7789
Related to:
Ranjana Biswas, 64Taposhi Biswas, 36Salil Biswas
Connected to:
Aakash J Pandya, 37Alberto E Pandya, 32Alok R Pandya, 38Alpesh P Pandya, 43Anju A Pandya, 43Arvind S Pandya, 82Ashwin M Pandya, 69Avinash N Pandya, 62Bakul K Pandya, 83Dhaivat V Pandya, 61

Ranjana Pandya Phones & Addresses

  • 3 Kaegill Ln, New Paltz, NY 12561 (845) 255-7789
  • Cold Spring, NY
  • Ossining, NY
  • 3 Kaegill Ln, New Paltz, NY 12561

Work

Position: Construction and Extraction Occupations

Education

Degree: High school graduate or higher

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ranjana Pandya
PALTZ ASSOCIATES, INC
3 Kaegill Ln, New Paltz, NY 12561

Publications

Us Patents

Thinner, Lighter And Lower Aberration Prisms For Ophthalmic Applications

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US Patent:
6934084, Aug 23, 2005
Filed:
Jul 2, 2002
Appl. No.:
10/187638
Inventors:
Ranjana Pandya - New Paltz NY, US
International Classification:
G02B005/18
US Classification:
359571, 359831, 351175
Abstract:
Novel optical devices, which are referred to as composite prisms in this document, have been designed, produced and tested. They have the potential to be useful for a number of vision related applications. For high prism diopter (15 prism diopters or more), composite prisms have resulted in thinner, lighter and lower aberration optical devices than the standard ophthalmic prisms currently in use. They also offer significantly better optical quality than the Fresnel press-on prisms which are also used to correct several ophthalmic disorders.

Method Of Forming Thin, Defect-Free, Monocrystalline Layers Of Semiconductor Materials On Insulators

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US Patent:
47435674, May 10, 1988
Filed:
Aug 11, 1987
Appl. No.:
7/084657
Inventors:
Ranjana Pandya - Cold Spring NY
Andre M. Martinez - Wappingers Falls NY
Assignee:
North American Philips Corp. - New York NY
International Classification:
H01L 21265
H01L 21225
US Classification:
437 84
Abstract:
A structure comprising thin defect-free monocrystalline layer of a silicon of an insulating layer is produced from a structure comprising a thin recrystallizable layer of silicon on an insulating layer by use of a low softening point insulating layer, scanning the structure relative to a zone heater the beams of which are focused on the recrystallizable silicon layer so as to form a melt zone having a convex solid-liquid interface in the silicon layer while forming a liquid area under the melt zone in the insulating layer.

Method Of Making Dielectrically Isolated Metal Base Transistors And Permeable Base Transistors

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US Patent:
52907155, Mar 1, 1994
Filed:
Dec 31, 1991
Appl. No.:
7/815689
Inventors:
Ranjana Pandya - New Paltz NY
Assignee:
U.S. Philips Corporation - New York NY
International Classification:
H01L 21265
US Classification:
437 29
Abstract:
The invention is directed to method for making a dielectrically isolated metal base transistors and permeable base transistors. The first step is the production of a silicon/metal silicide/silicon heterostructure. Thereafter the surface of the heterostructure is oxidized so as to provide a bonding surface. A second silicon substrate has its surface oxidized and is bonded to the heterostructure. The surface of the heterostructure is then etched back so as to expose individual transistors which are disposed on the oxidized surface of the second substrate. With suitable processing of the metal silicide layer it may act as the base region for a metal base or permeable base transistor.
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Ranjana Pandya from New Paltz, NY, age ~64 Get Report