Randall S Urdahl

6387761, May 14, 2002

Feb 4, 2000

09/499336

Wong-Cheng Shih - Hsinchu, TW
Pravin K. Narwankar - Sunnyvale CA
Randall S. Urdahl - Mountain View CA
Turgut Sahin - Cupertino CA

Applied Materials, Inc. - Santa Clara CA
Vanguard Semiconductor, Ltd. - Hsinchu

H01L 218238

438287, 438591, 438197, 438216, 438261, 438791

A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H ). In a prefered embodiment of the present invention the ambient comprises H and N.

6573150, Jun 3, 2003

Oct 10, 2000

09/686451

Randall S. Urdahl - Mountain View CA
Pravin K. Narwankar - Sunnyvale CA
Asher K. Sinensky - Berkeley CA
Andrea M. Mendoza - Palo Alto CA

Applied Materials, Inc. - Santa Clara CA

H01L 2120

438396, 438240, 438785, 438907, 438381

The present invention provides a method of integrating tantalum oxide into an MIM capacitor for a semiconductor device, comprising the step of vapor-depositing the tantalum oxide from an oxygen-free liquid precursor and under process conditions comprising a deposition temperature of less than about 500Â C. and a deposition pressure of less than about 96 Torr, wherein the tantalum oxide is integrated into the MIM capacitor. Also provided is a method of forming an MIM capacitor comprising the step of integrating a tantalum oxide dielectric film with a tantalum nitride or a titanium nitride bottom electrode deposited on a substrate and a titanium nitride top electrode thereby forming an MIM capacitor.

6677254, Jan 13, 2004

Jul 23, 2001

09/911947

Pravin Narwankar - Sunnyvale CA
Mouloud Bakli - Crollis, FR
Ravi Rajagopalan - Sunnyvale CA
Randall S. Urdahl - Mountain View CA
Asher Sinensky - Berkeley CA
Shankarram Athreya - Sunnyvale CA

Applied Materials, Inc. - Santa Clara CA

H01L 2131

438785, 438240, 438769, 438770, 438775, 438786

The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta O , a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700Â C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.

7812307, Oct 12, 2010

Jul 11, 2006

11/485063

David T. Dutton - San Jose CA, US
Randall S. Urdahl - Mountain View CA, US
Arthur Schleifer - Portola Valley CA, US
Karen L. Seward - Palo Alto CA, US

Agilent Technologies, Inc. - Santa Clara CA

H01J 49/00
H01J 27/00

250288, 250423 R

Aspects of the invention include sample ionizing devices and methods of use thereof. Embodiments of the sample ionizing devices include a microplasma generation source with a plasma generation region, a sample input port for delivering a sample to the plasma generation region, and a gas flow element configured to flow gas through the microplasma generation source independently of the sample input port. The devices and methods of the invention find use in a variety of different applications, including analyte detection applications.

8217343, Jul 10, 2012

Jan 26, 2010

12/693857

James Edward Cooley - San Francisco CA, US
Viorica Lopez-Avila - Sunnyvale CA, US
Randall Urdahl - Mountain View CA, US

Agilent Technologies, Inc. - Santa Clara CA

H01J 49/16
H01J 27/24

250288, 250423 P, 31511121, 31511181

A device includes a first substrate having a principal surface having a plurality of sample sites having a corresponding sample; a second substrate having a principal surface facing and spaced apart from the principal surface of the first substrate, the second substrate having a plurality of ultraviolet emission sites corresponding to the sample sites of the first substrate, each of the ultraviolet emission sites being spaced apart from and facing a corresponding one of the sample sites of the first substrate, each of the ultraviolet emission sites being configured to emit ultraviolet light to a corresponding one of the sample sites on the first substrate, and to ionize at least a portion of a sample provided at each sample site; and an ion extraction device configured to extract ions from a gap between the first substrate and the structure.

20020009861, Jan 24, 2002

Jun 12, 1998

09/096858

PRAVIN K. NARWANKAR - SUNNYVALE CA, US
TURGUT SAHIN - CUPERTINO CA, US
RANDALL S. URDAHL - PALO ALTO CA, US
ANKINEEDU VELAGA - CUPERTINO CA, US
PATRICIA LIU - SARATOGA CA, US

H01L021/76
H01L021/31
H01L021/469

438/404000

A method and apparatus for forming and annealing a dielectric layer. According to the present invention an active atomic species is generated in a first chamber. A dielectric layer formed on a substrate is then exposed to the active atomic species in a second chamber, wherein the second chamber is remote from the first chamber.

20110109226, May 12, 2011

Nov 6, 2009

12/613643

James Edward COOLEY - San Francisco CA, US
Gregory S. LEE - Mountain View CA, US
Arthur SCHLEIFER - Portola Valley CA, US
Robert C. TABER - Palo Alto CA, US
Randall URDAHL - Mountain View CA, US
Martin L. GUTH - Colorado Springs CO, US
Lewis R. DOVE - Monument CO, US

AGILENT TECHNOLOGIES, INC. - Loveland CO

H05B 31/26

31511121

An illumination device provides light to a flowing gaseous sample. The device includes a structure including a cavity configured to have a microplasma disposed therein. The cavity substantially encircles a cross-section of a channel that is configured to pass the flowing gaseous sample therethrough. The cavity is defined in part by an interior wall of the structure separating the cavity from the channel. The interior wall includes at least one orifice passing therethrough configured to provide to the flowing gaseous sample light generated by the microplasma. At least one electrode is configured to supply energy to the microplasma within the cavity.

20110175531, Jul 21, 2011

Jan 15, 2010

12/688082

Randall URDAHL - Mountain View CA, US
James Edward COOLEY - San Francisco CA, US
Gregory S. LEE - Mountain View CA, US
August Jon HIDALGO - San Francisco CA, US
Martin L. GUTH - Colorado Springs CO, US

AGILENT TECHNOLOGIES, INC. - Loveland CO

H05H 1/24

31511121

A plasma generation device includes: a substrate having a first surface and a second surface; a stripline resonant ring disposed on the first surface of the substrate, and defining a discharge gap; a pair of electrode extensions connected to the stripline resonant ring at the discharge gap; a ground plane disposed on the second surface of the substrate; a gas flow element configured to flow gas between at least one of: (1) the discharge gap, and (2) the pair of electrode extensions; and a structure disposed adjacent the substrate to form an enclosure that substantially encloses at least a region including the discharge gap and the electrode extensions, the enclosure being adapted to contain a plasma.