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Ralph R Dammel

from Hilton Head Island, SC
Age ~70
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Also known as:
Ralph Dr Dammel, Ralph R
Related to:
April W Lipford, 50Anne-Kathrin DammelChristian Dammel, 36Anne K Dammel, 38Barbara Dammel, 68
Connected to:
Hope Dammen, 42Michelle P Dammen, 39Terry L Dammen, 78Carl Dammer, 86Karen L Dammer, 60Cynthia A Dammermann, 59Kurt P Dammermann, 57Mandi A Dammerman, 43Markus Dammermann, 60Anne H Dammers, 69

Ralph Dammel Phones & Addresses

  • Hilton Head Island, SC
  • Springfield, PA
  • Kenvil, NJ
  • Branchburg, NJ
  • 8 Quimby Ln, Flemington, NJ 08822 (908) 806-2135
  • Coventry, RI
  • 69 N Hillside Ave, Kenvil, NJ 07847 (908) 619-3556

Work

Position: Transportation and Material Moving Occupations

Education

Degree: Graduate or professional degree

Resumes

Resumes

Ralph Dammel Photo 1

Research Fellow

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Location:
641 Hill Farm Ln, Springfield, PA 19064
Industry:
Chemicals
Work:
Emd Performance Materials A Subsidiary of Merck Kgaa Darmstadt
Research Fellow
Emd Performance Materials A Subsidiary of Merck Kgaa Darmstadt
Chief Technologist, Performance Materials
Az Electronic Materials Mar 2009 - Mar 2014
Chief Technology Officer
Az Electronic Materials 2007 - 2009
Vice President, Global R and D
Education:
Goethe University 1982 - 1986
Johannes Gutenberg University Mainz 1972 - 1981
Master of Science, Masters, Chemistry University of Sussex 1976
Skills:
Polymers
Chemistry
Characterization
Nanotechnology
Materials Science
Lithography
Coatings
R&D
Thin Films
Microfabrication
Semiconductor Industry
Semiconductors
Polymer Chemistry
Materials
Metrology
Spectroscopy
Design of Experiments
Polymer Science
Uv/Vis
Patents
Photolithography
Nanomaterials
Electrochemistry
Organic Chemistry
Process Simulation
Polymer Characterization
Surface Chemistry
Tga
Chemical Engineering
Analytical Chemistry
Nanoparticles
Afm
Catalysis
Cvd
Scanning Electron Microscopy
Technology Transfer
Mass Spectrometry
Ftir
Ic
Nanofabrication
Mems
Optics
Microfluidics
Silicon
Biomaterials
Adhesives
Pecvd
Research and Development
Integrated Circuits
Languages:
English
German
French
Latin
Thai
Ralph Dammel Photo 2

Ralph Dammel

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Publications

Us Patents

Photoresist Composition For Deep Uv Radiation

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US Patent:
6365322, Apr 2, 2002
Filed:
Dec 7, 1999
Appl. No.:
09/455872
Inventors:
Munirathna Padmanaban - Bridewater NJ
Ralph R. Dammel - Flemington NJ
Assignee:
Clariant Finance (BVI) Limited
International Classification:
G03F 7004
US Classification:
4302701, 430326, 430914, 430921
Abstract:
The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region, where the photoresist performance is not adversely impacted by basic contaminants in the processing environment of the photoresist. The novel photoresist comprises a polymer, a photoactive compound, a basic compound that is a sulfonium or iodonium compound that is essentially nonabsorbing at the exposure wavelength of the photoresist, and a solvent composition. The invention further relates to a process for imaging such a photoresist in the deep ultraviolet region.

Lift-Off Process For Patterning Fine Metal Lines

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US Patent:
6372414, Apr 16, 2002
Filed:
Mar 12, 1999
Appl. No.:
09/268438
Inventors:
Randy D. Redd - Chandler AZ
Ralph R. Dammel - Flemington NJ
John P. Sagan - Blairstown NJ
Mark A. Spak - Edison NJ
Assignee:
Clariant Finance (BVI) Limited
International Classification:
G03F 726
US Classification:
430327, 430322, 430326, 430329, 430330, 430331, 430464
Abstract:
The present invention relates to a process for providing a pattern on a substrate for use in a metal lift-off process, the process comprising: 1) coating a substrate with a liquid positive photoresist; 2) soft baking the coated substrate; 3) contacting the substrate with an aqueous alkaline developer containing from about 0. 005 volume percent to about 0. 05 volume percent of an alkylene glycol alkyl ether; 4) placing a patterned mask over the substrate; 5) exposing the substrate through the mask; 6) post exposure baking the substrate; 7) optionally, flood exposing the substrate; and 8) developing the substrate with an aqueous alkaline developer. The invention also relates to a novel developer solution of an ammonium hydroxide containing from about 0. 005 volume percent to about 0. 5 volume percent of an alkylene glycol alkyl ether and to a process for producing such a novel developer solution.

Photoresist Composition For Deep Uv And Process Thereof

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US Patent:
6447980, Sep 10, 2002
Filed:
Jul 19, 2000
Appl. No.:
09/619336
Inventors:
M. Dalil Rahman - Flemington NJ
Munirathna Padmanaban - Bridgewater NJ
Ralph R. Dammel - Flemington NJ
Assignee:
Clariant Finance (BVI) Limited
International Classification:
G03C 1492
US Classification:
4302701, 430326, 430914
Abstract:
The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.

Polymer Suitable For Photoresist Compositions

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US Patent:
6486282, Nov 26, 2002
Filed:
May 11, 2001
Appl. No.:
09/854312
Inventors:
Ralph R. Dammel - Flemington NJ
Raj Sakamuri - Sharon MA
Assignee:
Clariant Finance (BVI) Limited
International Classification:
C08F12042
US Classification:
526297, 5262196, 526245, 526282, 5263285, 526342
Abstract:
The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.

Negative-Acting Chemically Amplified Photoresist Composition

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US Patent:
6576394, Jun 10, 2003
Filed:
Jun 16, 2000
Appl. No.:
09/596098
Inventors:
Pingyong Xu - Basking Ridge NJ
Ping-Hung Lu - Bridgewater NJ
Ralph R. Dammel - Flemington NJ
Assignee:
Clariant Finance (BVI) Limited
International Classification:
G03C 1492
US Classification:
4302701, 430311, 430325, 430905, 430921
Abstract:
A chemically-amplified, negative-acting, radiation-sensitive photoresist composition that is developable in an alkaline medium, the photoresist comprising: a) a phenolic film-forming polymeric binder resin having ring bonded hydroxyl groups; b) a photoacid generator that forms an acid upon exposure to radiation, in an amount sufficient to initiate crosslinking of the film-forming binder resin; c) a crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises an etherified aminoplast polymer or oligomer; d) a second crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises either 1) a hydroxy substituted- or 2) a hydroxy C -C alkyl substituted-C -C alkyl phenol, wherein the total amount of the crosslinking agents from steps c) and d) is an effective crosslinking amount; and e) a photoresist solvent, and a process for producing a microelectronic device utilizing such a photoresist composition.

Polymer Suitable For Photoresist Compositions

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US Patent:
6686429, Feb 3, 2004
Filed:
May 11, 2001
Appl. No.:
09/854312
Inventors:
Ralph R. Dammel - Flemington NJ
Raj Sakamuri - Sharon MA
Assignee:
Clariant Finance (BVI) Limited
International Classification:
C08F12042
US Classification:
526297, 5262196, 526245, 526282, 5263285, 526342
Abstract:
The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.

Photoresist Composition For Deep Uv Radiation Containing An Additive

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US Patent:
6723488, Apr 20, 2004
Filed:
Nov 7, 2001
Appl. No.:
10/037161
Inventors:
Takanori Kudo - Bedminster NJ
Ralph R. Dammel - Flemington NJ
Munirathna Padmanaban - Bridgewater NJ
Assignee:
Clariant Finance (BVI) Ltd - Tortola
International Classification:
G03F 7004
US Classification:
4302701, 430296, 430905
Abstract:
The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.

Photoresist Composition For Deep Ultraviolet Lithography

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US Patent:
6737215, May 18, 2004
Filed:
May 11, 2001
Appl. No.:
09/853732
Inventors:
Ralph R. Dammel - Flemington NJ
Raj Sakamuri - Sharon MA
Assignee:
Clariant Finance (BVI) Ltd - Tortola
International Classification:
G03F 7004
US Classification:
4302701, 4302861, 430322, 430326, 430905, 430910, 526297, 526342
Abstract:
The present invention relates to a photoresist composition sensitive in the deep ultraviolet region and a method of processing the photoresist, where the photoresist comprises a novel copolymer, a photoactive component, and a solvent. The novel copolymer comprises a unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and a unit derived from an unsaturated cyclic non aromatic compound.

Isbn (Books And Publications)

Diazonaphthoquinone-Based Resists

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Author

Ralph Dammel

ISBN #

0819410195

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Ralph R Dammel from Hilton Head Island, SC, age ~70 Get Report