Ralf Jonczyk

7975833, Jul 12, 2011

Jul 15, 2008

12/173248

Ralf Jonczyk - Wilmington DE, US
James A Rand - Landenberg PA, US

General Electric Company - Schenectady NY

B65G 33/14

198669, 198662, 425207, 425208

A material handling system for moving material from a storage device to a receiver comprises a counter rotating double screw feeder extending from the storage device to the receiver. The counter rotating double screw feeder comprises an outer screw feed member; an inner screw feed member; where the outer screw feed member being positioned in an outer screw feed member tube; and the inner screw feed member being positioned in an inner screw feed member tube. The material is feed from the storage device to the process tube via the outer screw feed member; the inner screw feed member removes gas and byproducts from the receiver.

8003882, Aug 23, 2011

Nov 7, 2006

11/557231

Stephen George Pisklak - Hockessin DE, US
James Allan Rand - Landenberg PA, US
Ralf Jonczyk - Wilmington DE, US
Alysha Grenko - Bulger PA, US

General Electric Company - Schenectady NY

H01L 31/0203
H01L 31/0224

136251, 136244, 136246, 136256, 136259, 438 64

Methods and systems for photovoltaic roofing systems are provided. The system includes a back sheet including a length, L, a width, W, and a thickness, T, the back sheet including an overlap portion extending along length L having a width, WO and an active portion extending along length L having a width, WA. The system also includes a photovoltaic cell formed on a surface of the active portion, the photovoltaic cell including a photovoltaic member electrically responsive to an absorption of photons, a negative electrode coupled to a surface of the photovoltaic member, and a positive electrode coupled to the surface of the photovoltaic member, wherein the thickness T is selected such that thickness T plus a thickness of the photoelectric cell substantially match a thickness of a proximate non-photovoltaic roofing member when the photovoltaic roofing system is installed.

8062704, Nov 22, 2011

Aug 2, 2007

11/832871

Ralf Jonczyk - Wilmington DE, US

Motech Americas, LLC - Newark DE

B05D 7/22
B05D 3/02
F27B 14/10

427230, 4273741

A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000 C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.

8293009, Oct 23, 2012

Nov 17, 2011

13/299031

Emanuel M. Sachs - Newton MA, US
Richard L. Wallace - Acton MA, US
Eerik T. Hantsoo - Livermore CA, US
Adam M. Lorenz - Arlington MA, US
G. D. Stephen Hudelson - Lexington MA, US
Ralf Jonczyk - Wilmington DE, US

1366 Technologies Inc. - Lexington MA

C30B 15/02

117 13, 117 40, 117 45, 117 50, 117 54

A pressure differential is applied across a mold sheet and a semiconductor (e. g. silicon) wafer (e. g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

8334194, Dec 18, 2012

Feb 6, 2008

12/026586

Ralf Jonczyk - Wilmington DE, US
James Rand - Landenberg PA, US

Motech Americas, LLC - Newark DE

H01L 21/324

438486, 438799, 257E2109

Methods and apparatus for fabricating a semiconductor sheet are provided. In one aspect, a method for fabricating a semiconductor wafer includes applying a layer of semiconductor material across a portion of a setter material, introducing the setter material and the semiconductor material to a predetermined thermal gradient to form a melt, wherein the thermal gradient includes a predetermined nucleation and growth region, and forming at least one local cold spot in the nucleation and growth region to facilitate inducing crystal nucleation at the at least one desired location.

20050176218, Aug 11, 2005

Jan 28, 2005

11/046535

Ralf Jonczyk - Wilmington DE, US
Scott Kendall - Lincoln University PA, US
James Rand - Landenberg PA, US

GE ENERGY (USA) LLC - Atlanta GA

H01L021/36
C30B001/00
H01L021/00
H01L021/20

438478000

There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.

20070034251, Feb 15, 2007

Jul 26, 2004

10/562518

Ralf Jonczyk - Wilmington DE, US
Scott Kendall - Berlin MD, US
James Rand - Landenberg PA, US

GE Energy (USA) LLC - Atlanta GA

H01L 31/00

136252000

There is provided a structure comprising semiconductor material, the structure having at least one zone of reduced oxygen concentration, such zone having an interstitial oxygen concentration of not greater than 3×10oxygen atoms/cm, such zone extending at least 75 microns in depth from a first major surface. There is further provided a photovoltaic cell comprising at least one such structure.

20080308970, Dec 18, 2008

Jun 15, 2007

11/763806

Ralf Jonczyk - Wilmington DE, US
James Rand - Landenberg PA, US
Victor Lienkong Lou - Schenectady NY, US

GENERAL ELECTRIC COMPANY - Schenectady NY

B29C 43/22

264280

A process for melting powders of a semiconductor material, such as silicon, to yield a high-purity solid product. The process generally entails introducing the powder into an elevated end of a tube inclined from horizontal and, while maintaining an inert atmosphere within the tube, rotating the tube so as to agitate and cause the powder therein to flow toward an oppositely-disposed lower end of the tube while heating the tube so that the powder melts as it flows toward the lower end of the tube. The molten material is then allowed to flow freely from the lower end of the tube and subsequently solidify to form a product.