Raghu N Bhattacharya

7297868, Nov 20, 2007

Jul 25, 2003

10/627322

Raghu Nath Bhattacharya - Littleton CO, US

Davis, Joseph & Negley - Mill Valley CA

H01L 31/00

136262, 136264, 136265, 205239, 205316

A photovoltaic cell exhibiting an overall conversion efficiency of at least 9. 0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

7611573, Nov 3, 2009

Apr 2, 2004

10/592963

Raghu N. Bhattacharya - Littleton CO, US

Alliance for Sustainable Energy, LLC - Golden CO

C09K 3/00
H01L 31/0296
H01L 31/032
B05D 5/00

1062866, 10628718, 427 74, 427226, 136265, 423 99, 4235121, 4235661

The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

8513050, Aug 20, 2013

Jun 15, 2010

12/815585

Raghu Nath Bhattacharya - Littleton CO, US
Sovannary Phok - Lakewood CO, US
Philip Anthony Parilla - Lakewood CO, US

U.S. Department of Energy - Washington DC

H01L 21/00

438 95, 438102, 438103, 257 42, 257 43, 257414

A Bi—Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1. 2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

8586506, Nov 19, 2013

Aug 1, 2005

11/817452

Raghu N. Bhattacharya - Littleton CO, US
Sovannary Phok - Lakewood CO, US
Priscila Spagnol - Boulder CO, US
Tapas Chaudhuri - Lakewood CO, US

Alliance for Sustainable Energy, LLC - Golden CO

H01L 39/24
C25D 7/00
C25D 9/04
B32B 15/04

505472, 505470, 505434, 505500, 505510, 205 51, 205170, 205148, 205227, 428701

Methods of producing one or more biaxially textured layer on a substrate, and articles produced by the methods, are disclosed. An exemplary method may comprise electrodepositing on the substrate a precursor material selected from the group consisting of rare earths, transition metals, actinide, lanthanides, and oxides thereof. An exemplary article () may comprise a biaxially textured base material (), and at least one biaxially textured layer () selected from the group consisting of rare earths, transition metals, actinides, lanthanides, and oxides thereof. The at least one biaxially textured layer () is formed by electrodeposition on the biaxially textured base material ().

20020189665, Dec 19, 2002

Apr 10, 2001

09/829730

Raghu Bhattacharya - Littleton CO, US

DAVIS, JOSEPH & NEGLEY

H01L021/00
C25D005/00
H01L031/00

136/262000, 136/265000, 438/093000, 205/080000

A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

20040131792, Jul 8, 2004

Jun 17, 2003

10/451048

Raghu Bhattacharya - Littleton CO, US

B05D001/18

427/437000, 427/250000

A process for depositing copper-indium-gallium-selenide thin films on substrates, including foreign substrates, occurs in a chemical bath that includes a buffer solution and does not require external current as a catalyst. Formation of the chemical bath includes compounds of each of the constituent elements dissolved in deionized water and the addition of pHydrion buffers likewise dissolved. Deposition occurs as a result of the introduction of both a working electrode and a counter electrode. The deposited thin film is further processed through physical vapor deposition of additional indium, gallium, and selenium in order to fine-tune the stoichiometry of the resultant thin film.

20060049057, Mar 9, 2006

Dec 20, 2002

10/535026

Raghu Bhattacharya - Littleton CO, US
Jun Chen - Golden CO, US

Midwest Research Institute - Kansas City MO

C25D 3/00
C25D 3/48

205266000, 205261000, 428672000

The present invention provides a method of forming a biaxially textured gold buffer layer () a on a substrate() by electrodeposition. A superconducting material () may be deposited onto the biaxially textured goldlayer (). The biaxial texturing in the gold layer () is maintained in the deposited superconductor material() to produce high critical current density.

20090209429, Aug 20, 2009

Feb 19, 2008

12/033660

Raghu N. Bhattacharya - Littleton CO, US
Xun Zhang - Schenectady NY, US
Venkat Selvamanickam - Wynantskill NY, US

SUPERPOWER, INC. - Schenectady NY

H01L 39/24

505434, 205183

A method of forming a superconducting article includes providing a substrate tape, forming a superconducting layer overlying the substrate tape, and depositing a capping layer overlying the superconducting layer. The capping layer includes a noble metal and has a thickness not greater than about 1.0 micron. The method further includes electrodepositing a stabilizer layer overlying the capping layer using a solution that is non-reactive to the superconducting layer. The superconducting layer has an as-formed critical current Iand a post-stabilized critical current I. The Iis at least about 95% of the I.