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Qingwei Mo

from San Jose, CA
Age ~51
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Also known as:
Qing W Mo, I Mo
Phone and address:
5806 Wales Ct, San Jose, CA 95138
Connected to:
Ahn K Mo, 64Alvin Mo, 30Amy J Mo, 83Anthony W Mo, 52Aye Mo, 38Carina Mo, 45Clark Mo, 40Delia W Mo, 35Elizabeth S Mo, 36Emily Mo, 27

Qingwei Mo Phones & Addresses

  • 5806 Wales Ct, San Jose, CA 95138
  • Sunnyvale, CA
  • 11250 Taylor Draper Cv, Austin, TX 78759 (512) 795-1240
  • 1642 6Th St, Austin, TX 78703 (512) 476-4746
  • 2501 Lake Austin Blvd, Austin, TX 78703 (512) 476-4746
  • 1642 W Sixth St, Austin, TX 78703 (512) 476-4746

Publications

Us Patents

Robust Led Structure For Substrate Lift-Off

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US Patent:
7687810, Mar 30, 2010
Filed:
Oct 22, 2007
Appl. No.:
11/876404
Inventors:
Qingwei Mo - Sunnyvale CA, US
Arnold Daguio - Gilroy CA, US
Assignee:
Philips Lumileds Lighting Company, LLC - San Jose CA
Koninklijke Philip Electronics N.V. - Eindhoven
International Classification:
H01L 27/15
H01L 29/40
H01L 23/29
US Classification:
257 79, 257 84, 257737, 257777, 257778, 257782, 257788
Abstract:
An etching step is performed on an LED/substrate wafer to etch through the LED epitaxial layers entirely around each LED on the substrate wafer to form a gap between each LED on the wafer. The substrate is not etched. When the LEDs/substrates are singulated, edges of each substrate extend beyond edges of the LED die. The LEDs are flip-chips and are mounted on a submount with the LED die between the submount and the substrate. An insulating underfill material is injected under the LED die and also covers the sides of the LED die and “enlarged” substrate. The substrate is then removed by laser lift-off. The raised walls of the underfill that were along the edges of the enlarged substrate are laterally spaced from the edges of the LED die so that a phosphor plate can be easily positioned on top to the LED die with a relaxed positioning tolerance.

Highly Reflective Mounting Arrangement For Leds

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US Patent:
8324652, Dec 4, 2012
Filed:
Oct 30, 2009
Appl. No.:
12/610261
Inventors:
Steven D. Lester - Sunnyvale CA, US
Frank Shum - Sunnyvale CA, US
Chao-Kun Lin - Sunnyvale CA, US
William So - Sunnyvale CA, US
Qingwei Mo - Sunnyvale CA, US
Assignee:
Bridgelux, Inc. - Livermore CA
International Classification:
H01L 33/00
US Classification:
257 99, 257 98, 257E33064, 257E33068
Abstract:
A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.

Passivation For A Semiconductor Light Emitting Device

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US Patent:
8471282, Jun 25, 2013
Filed:
Jun 7, 2010
Appl. No.:
12/795272
Inventors:
Frederic S. Diana - Santa Clara CA, US
Henry Kwong-Hin Choy - Sunnyvale CA, US
Qingwei Mo - Sunnyvale CA, US
Serge I. Rudaz - Sunnyvale CA, US
Frank L. Wei - San Francisco CA, US
Daniel A. Steigerwald - Cupertino CA, US
Assignee:
Koninklijke Philips Electronics N.V. - Eindhoven
Philips Lumileds Lighting Company, LLC - San Jose CA
International Classification:
H01L 33/00
US Classification:
257 98, 257 99, 257100
Abstract:
In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Optical Microscanning System And Method With Embedded Scannable Photo-Pumped Light Source

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US Patent:
20060126144, Jun 15, 2006
Filed:
Dec 9, 2004
Appl. No.:
11/008077
Inventors:
Qingwei Mo - Austin TX, US
International Classification:
G02B 26/08
US Classification:
359196000
Abstract:
An optical microscanning system for selectively emitting a highly coherent, collimated, and monochromatic beam of light () in a desired trajectory and selectively redirecting the trajectory within a scan field. The system includes a fixed light source () of substantially coherent, collimated, and monochromatic light () and an optically pumped light source () of highly coherent, collimated, and monochromatic light (). The optically pumped light source () is optically pumped by the fixed light source (). The optically pumped light source () can selectively redirect its light output (). Also, a method of manufacturing such an optical microscanning system. A cavity is etched () in a base substrate. Two electrodes are provided () at the cavity floor. A second layer is provided () over the mouth of the cavity. A mirror layer is bonded () onto the second layer. Spacers are etched () through the mirror layer and second layer to define a substrate section (). The mirror layer is etched to define a mirror ().

Islanded Carrier For Light Emitting Device

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US Patent:
20130221386, Aug 29, 2013
Filed:
Nov 14, 2011
Appl. No.:
13/878432
Inventors:
Qingwei Mo - Sunnyvale CA, US
Dirk Paul Joseph Vanderhaeghen - Los Gatos CA, US
Assignee:
KONINKLIJKE PHILIPS ELECTRONICS N.V. - EINDHOVEN
International Classification:
H01L 33/62
US Classification:
257 93, 438 28
Abstract:
A low-cost conductive carrier element provides structural support to a light emitting device (LED) die, as well as electrical and thermal coupling to the LED die. A lead-frame is provided that includes at least one carrier element, the carrier element being partitioned to form distinguishable conductive regions to which the LED die is attached. When the carrier element is separated from the frame, the conductive regions are electrically isolated from each other. A dielectric may be placed between the conductive regions of the carrier element.

Passivation For A Semiconductor Light Emitting Device

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US Patent:
20130252358, Sep 26, 2013
Filed:
May 29, 2013
Appl. No.:
13/904299
Inventors:
- EINDHOVEN, NL
Henry Kwong-Hin Choy - Sunnyvale CA, US
Qingwei Mo - Sunnyvale CA, US
Serge L. Rudaz - Sunnyvale CA, US
Frank L. Wei - San Francisco CA, US
Daniel A. Steigerwald - Cupertino CA, US
Assignee:
KONINKLIJKE PHILIPS ELECTRONICS N.V. - EINDHOVEN
International Classification:
H01L 33/60
H01L 33/08
US Classification:
438 28, 438 29
Abstract:
In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Highly Reflective Mounting Arrangement For Leds

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US Patent:
7622746, Nov 24, 2009
Filed:
Mar 17, 2006
Appl. No.:
11/378763
Inventors:
Steven D. Lester - Palo Alto CA, US
Frank Shum - Sunnyvale CA, US
Chao-Kun Lin - Sunnyvale CA, US
William So - Sunnyvale CA, US
Qingwei Mo - Sunnyvale CA, US
Assignee:
Bridgelux, Inc. - Sunnyvale CA
International Classification:
H01L 31/0232
US Classification:
257 98, 257 99, 257E33064, 257E33068
Abstract:
A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.

Passivation For A Semiconductor Light Emitting Device

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US Patent:
20210111321, Apr 15, 2021
Filed:
Dec 21, 2020
Appl. No.:
17/129164
Inventors:
- San Jose CA, US
Qingwei Mo - Sunnyvale CA, US
Serge L. Rudaz - Sunnyvale CA, US
Frank L. Wei - San Francisco CA, US
Daniel A. Steigerwald - Cupertino CA, US
Assignee:
LUMILEDS LLC - San Jose CA
International Classification:
H01L 33/60
H01L 33/54
H01L 33/48
H01L 33/38
H01L 33/44
H01L 33/00
H01L 33/08
Abstract:
In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
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Qingwei Mo from San Jose, CA, age ~51 Get Report