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Qing Qian

from San Jose, CA
Age ~70
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Also known as:
Qing Quian
Phone and address:
6817 Westmoor Way, San Jose, CA 95129
(408) 257-1865
Related to:
Jenny G Xue, 76Peimin W Lin, 64Qian L Xu, 68George Xu, 37David Xu, 32
Connected to:
Cen QianChelsea H Qian, 57Chunqi Qian, 44Crystal Qian, 29Elaine Y Qian, 61Fangzheng Qian, 34Feliks Qian, 57Flora F Qian, 51Guoqiang Qian, 57Haohua Qian, 61

Qing Qian Phones & Addresses

  • 6817 Westmoor Way, San Jose, CA 95129 (408) 257-1865
  • Fremont, CA
  • Sunnyvale, CA
  • 402 Front St, Mankato, MN 56001
  • Cupertino, CA
  • 6817 Westmoor Way, San Jose, CA 95129

Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Publications

Us Patents

Plasma Processing Apparatus

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US Patent:
7935186, May 3, 2011
Filed:
May 24, 2006
Appl. No.:
11/441290
Inventors:
Qing Qian - San Jose CA, US
Assignee:
Advanced Micro-Fabrication Equipment, Inc. Asia - George Town, Grand Cayman
International Classification:
C23C 16/00
C23F 1/00
H01L 21/306
US Classification:
118719, 118723 E, 118733, 15634531, 15634547
Abstract:
A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

Plasma Processing Apparatus

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US Patent:
8414702, Apr 9, 2013
Filed:
Apr 7, 2011
Appl. No.:
13/082340
Inventors:
Qing Qian - San Jose CA, US
Assignee:
Advanced Micro-Fabrication Equipment, Inc. Asia - George Town, Grand Cayman
International Classification:
C23C 16/00
C23F 1/00
H01L 21/306
US Classification:
118719, 118723 E, 118733, 15634531, 15634547
Abstract:
A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

Plasma Confinement Apparatus, And Method For Confining A Plasma

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US Patent:
8608851, Dec 17, 2013
Filed:
Oct 10, 2006
Appl. No.:
11/546041
Inventors:
Tom Ni - Pleasanton CA, US
Jinyuan Chen - Union City CA, US
Qing Qian - San Jose CA, US
Yuehong Fu - Fremont CA, US
Zhaoyang Xu - Shanghai, CN
Xusheng Zhou - Shanghai, CN
Ye Wang - Shanghai, CN
Assignee:
Advanced Micro-Fabrication Equipment, Inc. Asia - George Town, Grand Cayman
International Classification:
C23C 16/00
US Classification:
118715, 118723 E, 15634529, 15634547, 31511171
Abstract:
A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.

Apparatus To Decelrate And Control Ion Beams To Improve The Total Quality Of Ion Implantation

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US Patent:
20030066976, Apr 10, 2003
Filed:
Nov 19, 2002
Appl. No.:
10/299443
Inventors:
Jiong Chen - San Jose CA, US
Zhmin Wan - Sunnyvale CA, US
Qing Qian - San Jose CA, US
International Classification:
H01J037/317
US Classification:
250/492210
Abstract:
An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

Systems For Forming Photovoltaic Cells On Flexible Substrates

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US Patent:
20140367250, Dec 18, 2014
Filed:
Jan 18, 2013
Appl. No.:
14/371551
Inventors:
- Milpitas CA, US
Josef Bonigut - Alamo CA, US
Qing Qian - San Jose CA, US
Dennis R. Hollars - San Jose CA, US
Xiaodong Liu - Pudong, Shanghai, CN
Assignee:
NUVOSUN, INC. - Milpitas CA
International Classification:
H01L 31/18
H01J 37/34
US Classification:
20429811
Abstract:
A deposition system for depositing a thin film photovoltaic cell on a flexible substrate comprises an enclosure that is fluidically isolated from an environment external to the enclosure, and a plurality of deposition chambers in the enclosure. At least one deposition chamber of the plurality of deposition chambers comprises a magnetron sputtering apparatus that directs a material flux of one or more target materials towards a portion of the flexible substrate that is disposed in the at least one deposition chamber of the plurality of deposition chambers. A substrate payout roller in the enclosure provides a flexible substrate that is directed through each of the plurality of deposition chambers to a substrate take-up roller in the enclosure. At least one guide roller in the enclosure is configured to direct the flexible substrate to or from a given deposition chamber among the plurality of deposition chambers.

Plasma Confinement Apparatus, And Method For Confining A Plasma

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US Patent:
20140103805, Apr 17, 2014
Filed:
Dec 16, 2013
Appl. No.:
14/108241
Inventors:
- George Town, KY
Jinyuan Chen - Union City CA, US
Qing Qian - San Jose CA, US
Yuehong Fu - Fremont CA, US
Zhaoyang Xu - Shanghai, CN
Xusheng Zhou - Shanghai, CN
Ye Wang - Shanghai, CN
Assignee:
ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA - George Town
International Classification:
H05H 1/03
US Classification:
315 85
Abstract:
A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.
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Qing Qian from San Jose, CA, age ~70 Get Report