Philbert F Marsh

6924218, Aug 2, 2005

Dec 17, 2002

10/321310

Philbert Francis Marsh - Andover MA, US
Colin S. Whelan - Wakefield MA, US

Raytheon Company - Waltham MA

H01L021/44

438570, 438572, 438 92

A method for passivating a III-V material Schottky layer of a field effect transistor. The transistor has a gate electrode in Schottky contact with a gate electrode contact region of the Schottky layer. The gate electrode is adapted to control a flow of carriers between a source electrode of the transistor and a drain electrode of such tarnsistor. The transistor has exposed surface portions of the Schottky layer beween the source electrode and the drain electrode adjacent to the gate electrode contact region of the Schottky layer. The method includes removing organic contamination from the exposed surface portions of the Schottky layer using a oxygen plasma. The contamination removed surface portions of the Schottky layer are exposed to a solution of ammonium sulfide and NHOH. After removal of the solution, the exposed regions are dried in a nitrogen enviroment. A layer of passivating material is deposited over the dried surface portions.

7030032, Apr 18, 2006

May 13, 2003

10/437095

Philbert Francis Marsh - Andover MA, US
Colin Steven Whelan - Wakefield MA, US

Raytheon Company - Waltham MA

H01L 21/302

438745, 438754, 257444

A method for passivating a photodiode so as to reduce dark current, I, due to the exposed semiconductor material on the sidewall of the device. The method includes etching away sidewall surface damage using a succinic acid-hydrogen peroxide based sidewall etch. This is followed by a subsequent hydrochloric acid (HCl)-based surface treatment which completes the surface treatment and reduces the dark current I. Finally, a polymer coating of benzocyclobutene (BCB) is applied after the surface treatment to stabilize the surface and prevent oxidation and contamination which would otherwise raise the dark current were the diodes left with no coating. The BCB is then etched away from the contact pad areas to allow wirebonding and other forms of electrical contact to the diodes. Such method effectively stabilizes the etched surfaces of photodiodes resulting in significantly reduced and stable dark current.

20040262632, Dec 30, 2004

Jun 26, 2003

10/606820

Philbert Marsh - Andover MA, US
Colin Whelan - Wakefield MA, US
William Hoke - Wayland MA, US

H01L031/0328
H01L031/072

257/194000, 257/192000, 257/195000

A transistor structure having an gallium arsenide (GaAs) semiconductor substrate; a lattice match layer; an indium aluminum arsenide (InAlAs) barrier layer disposed over the lattice match layer; an InGaAs lower channel layer disposed on the barrier layer, where y is the mole fraction of In content in the lower channel layer; an InGaAs upper channel layer disposed on the lower channel layer, where x is the mole fraction of In content in the upper channel layer and where x is different from y; and an InAlAs Schottky layer on the InGaAs upper channel layer. The lower channel layer has a bandgap greater that the bandgap of the upper channel layer. The lower channel layer has a bulk electron mobility lower than the bulk electron mobility of the upper channel layer where.

20190378978, Dec 12, 2019

Aug 16, 2019

16/542644

- Marina Del Rey CA, US
Christopher Michael Rutherglen - Marina del Rey CA, US
Alexander Allen Kane - Marina del Rey CA, US
Philbert Francis Marsh - Marina del Rey CA, US
Kosmas Galatsis - Marina del Rey CA, US

H01L 51/00
H01L 51/05
B05D 1/06

A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, the carbon nanotube solution including carbon nanotubes dispersed in chloroform, and a reservoir configured to contain a water subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

20190214565, Jul 11, 2019

Nov 26, 2018

16/199915

- Culver City CA, US
Alexander Allen Kane - Culver City CA, US
Christopher Michael Rutherglen - Culver City CA, US
Kosmas Galatsis - Culver City CA, US
Philbert Francis Marsh - Culver City CA, US

H01L 51/00
H01L 51/05
H01L 51/10

Manufacturing an electrical device including providing a substrate having a surface and providing a sacrificial layer on the surface of the substrate. Depositing a solution of carbon nanotubes suspended in a solvent on a surface of the sacrificial layer and removing the solvent of the solution to thereby leave the carbon nanotubes on the sacrificial layer. Removing the sacrificial layer whereby the carbon nanotubes form a carbon nanotube layer and the carbon nanotubes in the carbon nanotube layer are aligned with each other. An electrical device, including a substrate having a surface and a layer of carbon nanotubes on the surface of the substrate. The carbon nanotubes in the layer are aligned with each other, such that an alignment angle between adjacent ones of the carbon nanotubes is within about 20 degrees.

20170213963, Jul 27, 2017

Jan 19, 2017

15/409897

- Marina del Rey CA, US
Christopher Michael Rutherglen - Marina del Rey CA, US
Alexander Allen Kane - Marina del Rey CA, US
Philbert Francis Marsh - Marina del Rey CA, US
Kosmas Galatsis - Marina del Rey CA, US

H01L 51/00
B05D 1/06
H01L 51/05

A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, and a reservoir configured to contain a subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

20140138746, May 22, 2014

Nov 16, 2012

13/679257

- Singapore, SG
Nathan Perkins - Fort Collins CO, US
John Stanback - Fort Collins CO, US
Philbert Marsh - Fort Collins CO, US
Hans G. Rohdin - Los Altos CA, US

H01L 29/778
H01L 21/20

257194, 438478

A pseudomorphic high electron mobility transistor (PHEMT) comprises a substrate comprising a Group III-V semiconductor material, a buffer layer disposed over the substrate, wherein the buffer layer comprises microprecipitates of a Group V semiconductor element and is doped with an N-type dopant, and a channel layer disposed over the buffer layer.