Peter Wennekers

57395616, Apr 14, 1998

Apr 30, 1996

8/640222

Peter Wennekers - Tempe AZ

Motorola, Inc. - Schaumburg IL

H01L 2980

257257

A light sensitive semiconductor device (10) is formed in a well region (12) in a semiconductor substrate (11). A first voltage (30) is applied to a source region (4) of the semiconductor device (10) and to a contact region (13) to the well region (12) to attract holes. A second voltage (31) is applied to the source region (14) and a drain region (16) to provide a current flow. As photons (23) from a light source are absorbed by semiconductor device (10), the source to drain current is decreased.

58048499, Sep 8, 1998

May 13, 1996

8/645378

Peter Wennekers - Tempe AZ

Motorola, Inc. - Schaumburg IL

H01L 2980
H01L 31112

257280

A MESFET structure (20) and a method that minimizes the effects of processing steps and device performance of the MESFET structure (20). The MESFET structure (20) has a gate (30) positioned over a channel region (28) and between a source region (36) and a drain region (34). The MESFET structure (20) further includes a hole injector region (32) formed near the channel region (28). The hole injector region (32) injects holes beneath the channel region (28) which decrease the ability of the trap sites to attract electrons generated by impact ionization. Thus, this supply of holes beneath the channel region (28) prevents the effects of IV-kink and hysteresis caused by electrons that are accumulated in the trap sites.