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Peter F Kurunczi

from Winchester, MA
Age ~54
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Related to:
Luis F Duran, 63Dilcia Ruiz Usma, 56Javier Duran
Connected to:
Kavya Kurup, 30Meenakshi U Kurup, 51Priyesh Kurup, 48Rahul S Kurup, 44Ramachandra K Kurup, 74Ramesh K Kurup, 58Varun Kurup, 39Viswanath P Kurup, 89Nicholas T Kurupas, 63Smitha Kuruppath, 43

Peter Kurunczi Phones & Addresses

  • 9 Davey Ln, Winchester, MA 01890
  • Cambridge, MA
  • 123 Highland Ave, Somerville, MA 02143 (617) 764-5187
  • 1737 Wroxton Rd, Houston, TX 77005 (713) 528-5506
  • Beverly, MA
  • Medford, MA
  • New York, NY
  • Jamaica, NY
  • Weehawken, NJ
  • Sunnyside, NY

Work

Company: Applied materials May 1, 2005 Position: Physicist

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Stevens Institute of Technology 2003 Specialities: Physics

Skills

Plasma Physics • Materials Science • Semiconductors • Metrology • Characterization • Semiconductor Industry • Electronics • Thin Films • Physics • Pvd

Industries

Semiconductors

Resumes

Resumes

Peter Kurunczi Photo 1

Physicist

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Location:
Cambridge, MA
Industry:
Semiconductors
Work:
Applied Materials
Physicist
University of Houston 2003 - 2005
Postdoctoral Fellow
Education:
Stevens Institute of Technology 2003
Doctorates, Doctor of Philosophy, Physics
Skills:
Plasma Physics
Materials Science
Semiconductors
Metrology
Characterization
Semiconductor Industry
Electronics
Thin Films
Physics
Pvd

Publications

Us Patents

Ion Source Configuration For Production Of Ionized Clusters, Ionized Molecules And Ionized Mono-Atoms

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US Patent:
7459704, Dec 2, 2008
Filed:
Nov 8, 2005
Appl. No.:
11/269033
Inventors:
Joseph C. Olson - Beverly MA, US
Anthony Renau - West Newbury MA, US
Donna L. Smatlak - Belmont MA, US
Paul Murphy - Reading MA, US
Alexander S. Perel - Danvers MA, US
Russell J. Low - Rowley MA, US
Peter Kurunczi - Somerville MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
G21K 5/10
H01J 37/08
US Classification:
25049221, 250427, 250307, 250310, 250300, 250251, 250423 R, 2504923, 250425, 250426, 250289, 2504922, 438300, 438 61, 438513, 438528, 257E21345, 257E21607, 257E21143, 257E21433, 31511181, 31523131, 31511121, 313230, 3133591, 3133631, 376144
Abstract:
Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.

Wafer Charge Monitoring

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US Patent:
7476877, Jan 13, 2009
Filed:
Feb 14, 2006
Appl. No.:
11/353820
Inventors:
Russell J. Low - Rowley MA, US
George M. Gammel - Marblehead MA, US
Peter F. Kurunczi - Somerville MA, US
Eric Cobb - Danvers MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 37/30
US Classification:
25049221, 250397
Abstract:
A charge monitoring system may include a platen having a surface configured to accept a wafer thereon, and a charge monitor disposed relative to the platen so that an ion beam simultaneously strikes a portion of the charge monitor and a portion of the wafer. The charge monitor is configured to provide a charge monitor signal representative of a charge on a surface of the wafer when the ion beam simultaneously strikes the portion of the charge monitor and the portion of the wafer. The charge monitor signal may depend, at least in part, on a beam potential of the ion beam.

Method And Apparatus For Controlling Beam Current Uniformity In An Ion Implanter

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US Patent:
7767986, Aug 3, 2010
Filed:
Jun 20, 2008
Appl. No.:
12/143144
Inventors:
Rajesh Dorai - Woburn MA, US
Peter F. Kurunczi - Cambridge MA, US
Alexander S. Perel - Danvers MA, US
Wilhelm P. Platow - Somerville MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 37/08
H01J 37/15
H01J 27/02
US Classification:
25049221, 250423 R, 250396 R, 250397, 250398, 31511181
Abstract:
An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

Techniques For Providing A Multimode Ion Source

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US Patent:
7812321, Oct 12, 2010
Filed:
Jun 11, 2008
Appl. No.:
12/137225
Inventors:
Peter Kurunczi - Cambridge MA, US
Rajesh Dorai - Woburn MA, US
Costel Biloiu - Rockport MA, US
Wilhelm Platow - Somerville MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 27/00
H01J 27/24
H01T 23/00
US Classification:
250424, 25049221, 250423 R, 250423 F, 250426
Abstract:
Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Method And Apparatus For Controlling Beam Current Uniformity In An Ion Implanter

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US Patent:
8003956, Aug 23, 2011
Filed:
Oct 3, 2008
Appl. No.:
12/244978
Inventors:
D. Jeffrey Lischer - Acton MA, US
John (Bon-Woong) Koo - Andover MA, US
Peter F. Kurunczi - Cambridge MA, US
Shardul Patel - Woburn MA, US
Wilhelm P. Platow - Somerville MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
G21K 5/10
US Classification:
25049221, 2504921, 2504922, 2504923
Abstract:
An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.

Ion Source Cleaning End Point Detection

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US Patent:
8003959, Aug 23, 2011
Filed:
Jun 26, 2009
Appl. No.:
12/492894
Inventors:
Wilhelm P. Platow - Somerville MA, US
Neil J. Bassom - Hamilton MA, US
Peter F. Kurunczi - Cambridge MA, US
Alexander S. Perel - Danvers MA, US
Craig R. Chaney - Lanesville MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 37/317
H01J 37/08
H01J 49/10
H01J 27/02
H01J 9/38
US Classification:
25049221, 134 11, 134 221
Abstract:
In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.

Method And Apparatus For Cleaning And Surface Conditioning Objects Using Plasma

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US Patent:
8092643, Jan 10, 2012
Filed:
Jun 2, 2005
Appl. No.:
11/142988
Inventors:
Peter Frank Kurunczi - Beverly MA, US
Assignee:
IonField Systems, LLC - Moorestown NJ
International Classification:
B01L 3/00
C23F 1/00
US Classification:
15634543, 15634544, 422553
Abstract:
A method and apparatus for cleaning and surface conditioning objects using plasma are disclosed. One embodiment of the method discloses providing a plurality of elongated dielectric barrier members arranged adjacent each other, the elongated dielectric barrier members having electrodes coupled therein, providing a ground plane, introducing the objects proximate the elongated dielectric barrier members and the ground plane, and producing a dielectric barrier discharge to form plasma between the ground plane and the elongated dielectric barrier members for cleaning the objects. One embodiment of the apparatus for cleaning objects using plasma discloses a plurality of elongated dielectric barrier members arranged adjacent each other, a plurality of electrodes, each contained within, and extending substantially along the length of, respective ones of the elongated dielectric barrier members, and a ground plane proximate the plurality of elongated dielectric barrier members.

Method And Apparatus For Cleaning And Surface Conditioning Objects Using Plasma

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US Patent:
8092644, Jan 10, 2012
Filed:
Jun 2, 2006
Appl. No.:
11/421983
Inventors:
Peter Frank Kurunczi - Beverly MA, US
Assignee:
IonField Systems, LLC - Moorestown NJ
International Classification:
B01L 1/00
C23F 3/00
US Classification:
15634543, 15634544, 422553, 42218604
Abstract:
An apparatus and method for cleaning objects using plasma are disclosed. The apparatus provides a plurality of elongated dielectric barrier members arranged adjacent each other, a plurality of electrodes each contained within, and extending substantially along the length of, the plurality of elongated dielectric barrier members, and at least one buss bar for electrically coupling the plurality of electrodes to a voltage source. The method provides providing a plurality of elongated dielectric barrier members arranged adjacent each other, providing a plurality of electrodes each contained within, and extending substantially along the length of the plurality of elongated dielectric barrier members, providing at least one buss bar connected to the plurality of electrodes, electrically coupling the plurality of electrodes to a voltage source through the at least one buss bar, introducing the objects proximate the plurality of elongated dielectric barrier members, generating a dielectric barrier discharge between the plurality of dielectric barrier members and the objects; and forming plasma to clean at least a portion of the objects.
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Peter F Kurunczi from Winchester, MA, age ~54 Get Report