Peter M Asbeck

6506659, Jan 14, 2003

Mar 17, 2001

09/811321

Peter J. Zampardi - Newbury Park CA
Klaus F. Schuegraf - Aliso Viejo CA
Paul Kempf - Santa Ana CA
Peter Asbeck - San Diego CA

Newport Fab, LLC - Newport Beach CA

H01L 21331

438375, 438349, 257197

In one disclosed embodiment, a collector is deposited and a base is grown on the collector, for example, by epitaxially depositing either silicon or silicon-germanium. An emitter is fabricated on the base followed by implant doping an extrinsic base region. For example, the extrinsic base region can be implant doped using boron. The extrinsic base region doping diffuses out during subsequent thermal processing steps in chip fabrication, creating an out diffusion region in the device, which can adversely affect various operating characteristics, such as parasitic capacitance and linearity. The out diffusion is controlled by counter doping the out diffusion region. For example, the counter doped region can be implant doped using arsenic or phosphorous. Also, for example, the counter doped region can be formed using tilt implanting or, alternatively, by implant doping the counter doped region and forming a spacer on the base prior to implanting the extrinsic base region.

6563145, May 13, 2003

Dec 29, 1999

09/474624

Charles E. Chang - Newbury Park CA, 91320
Richard L. Pierson - Thousand Oaks CA, 91360
Peter J. Zampardi - Westlake Village CA, 91361
Peter M. Asbeck - San Diego CA, 92130

H01L 29739

257197, 257200, 438 35, 438235, 438342, 438796

A compound collector double heterojunction bipolar transistor (CCHBT) incorporates a collector comprising two layers: a wide bandgap collector region (e. g. , GaAs), and a narrow bandgap collector region (e. g. , InGaP). The higher electric field is supported in the wide bandgap region, thereby increasing breakdown voltage and reducing offset voltage. At the same time, the use of wide bandgap material in the depleted portion of the collector, and a higher mobility material toward the end and outside of the depletion region, reduces series resistance as well as knee voltage.

6624452, Sep 23, 2003

Jul 30, 2001

09/918306

Edward T. Yu - San Diego CA
Peter M. Asbeck - San Diego CA
Silvanus S. Lau - San Diego CA
Xiaozhong Dang - Fremont CA

The Regents of the University of California - Oakland CA

H01L 31072

257194, 257192, 257615

A GaN-based HFET includes a set of layers all having a common face polarity, i. e. , all being either Ga-face or N-face. One of the layers is a thin barrier layer having a first face with a positive charge and a second face with a negative charge thereby causing a potential change to occur between the two faces. The if potential change causes the barrier layer to prevent electron flow from a channel layer into a buffer layer. The GaN-based HFET may also be fabricated without a top barrier layer to obtain an inverted GaN-based HFET.

6674103, Jan 6, 2004

Jul 31, 2001

09/919367

Charles W. Tu - La Jolla CA
Peter M. Asbeck - San Diego CA
Kazuhiro Mochizuki - Nagasaki, JP
Rebecca Welty - La Jolla CA

The Regents of the University of California - Oakland CA

H01L 310328

257197, 257183, 257 76

An improved HBT of the invention reduces the current blocking effect at the base-collector interface. Nitrogen is incorporated at the base-collector interface in an amount sufficient to reduce the conduction band energy of the collector at the base-collector interface to equal the conduction band energy of the base. In a preferred embodiment, a nitrogen concentration on the order of 2% is used in a thin Ë20 nm layer at the base-collector interface. Preferred embodiment HBTs of the invention include both GaAs HBTs and InP transistors in various layer structures, e. g. , single and double heterojunction bipolar transistors and blocked hole bipolar transistors.

7439556, Oct 21, 2008

Mar 29, 2005

11/093592

Berinder P. S. Brar - Newbury Park CA, US
Peter M. Asbeck - San Diego CA, US

ColdWatt, Inc. - Austin TX

H01L 31/0328

257194

A substrate driven field effect transistor (FET) and a method of forming the same. In one embodiment, the substrate driven FET includes a substrate having a source contact covering a substantial portion of a bottom surface thereof and a lateral channel above the substrate. The substrate driven FET also includes a drain contact above the lateral channel. The substrate driven FET still further includes a source interconnect that connects the lateral channel to the substrate operable to provide a low resistance coupling between the source contact and the lateral channel.

7652532, Jan 26, 2010

Sep 5, 2006

11/515584

Mingyuan Li - La Jolla CA, US
Peter Asbeck - Del Mar CA, US
Ian Galton - Del Mar CA, US
Lawrence E. Larson - Del Mar CA, US

The Regents of the University of California - Oakland CA

H03F 1/32

330149, 4551152

The invention provides methods and devices for estimating power amplifier nonlinearity using simple correlation techniques. Methods and devices of the invention can monitor a power amplifier that has digitally modulated inputs and an output containing more than one signal stream. A preferred method of the invention creates a test signal by forming the products of several pseudorandom noise sequences from the digitally modulated inputs to the power amplifier. Nonlinear contributions of the power amplifier output are determined by cross-correlating the test signal and the total output signal of the power amplifier. In preferred embodiments, the determined nonlinear contributions of the power amplifier are used to introduce corrective predistortion in the power amplifier.

7953174, May 31, 2011

Mar 19, 2003

10/392290

Peter M. Asbeck - San Diego CA, US
Ian Galton - Del Mar CA, US

The Regents of the University of California - Oakland CA

H04L 27/00

375295, 375307

The invention is directed to digital generation of RF signals. In the digital domain, digital RF signals are converted to the digital signals clocked at a high speed clock that is phase-synchronized with the RF carrier. A band-pass delta-sigma modulator produces a bit stream from the converted digital signals.

8148718, Apr 3, 2012

Jun 2, 2008

12/156547

Peter Asbeck - Del Mar CA, US
Lingquan Wang - La Jolla CA, US

The Regents of the University of California - Oakland CA

H01L 29/15

257 27, 257192, 257200, 257E49001, 257E29081, 257E29091

The invention provides a transistor having a substrate, a structure supported by the substrate including a source, drain, gate, and channel, wherein the source and the channel are made of different materials, and a tunnel junction formed between the source and the channel, whereby the tunnel junction is configured for injecting carriers from the source to the channel.