Inventors:
Peruvamba R. Hariharan - Fort Wayne IN
Assignee:
Magnavox Government and Industrial Electronics Company - Fort Wayne IN
International Classification:
H03H 1112
Abstract:
A circuit for monolithic or film stratum is adapted to have circuit capacitances integrated therein and having a minimum unit capacitance (MUC), or smallest practical capacitance that can be fabricated therein. Circuits are provided that have in one circuit arm a capacitor having a first capacity and in a second circuit arm a number N of series connected switched capacitors having a second or terminal capacity, or effective capacity between the end terminals of the second arm, that is less than the first capacity. The first capacity and second capacity form a ratio R, which is the factor by which the first capacity is greater than the second capacity. Switching is provided for each plate of each of the series connected capacitors and at the end terminals of the second arm to alternately connect the second arm into the circuit and to discharge the series connected capacitors which minimizes the effects of parasitic capacitances. Each series connected switched capacitor of the second circuit arm may have a capacity of substantially one MUC so that the terminal capacity of the second circuit arm is (1/N) MUCs and the first capacity is (R/N) MUCs. The total capacitance, or circuit capacitance, that is integrated into the stratum is (N+R/N) MUCs.