Search

Pedram Khalili Amiri

from Wilmette, IL
Age ~43
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Also known as:
Pedram K Amiri, Pedram Khalili, Amiri Pedram Khalili Haghayegh, Pedram I
Related to:
Sina AmiriKhalili Amiri
Connected to:
Angela Amiri, 50Behnam Amiri, 39Charlotte E Amiri, 55Fahim Amiri, 43Farzin D Amiri, 29Haleh Amiri, 45Halima S Amiri, 92Homa Amiri, 85Jafar Amiri, 88Joanne K Amiri, 73

Pedram Amiri Phones & Addresses

  • Wilmette, IL
  • Chicago, IL
  • Los Angeles, CA

Work

Company: DDD Specialities: problem solving

Education

School / High School: US Citizen, University of Baltimore Specialities: information systems, Model

Publications

Us Patents

Tunable And Metastable Ferroelectric Materials And Magneto-Electric Devices

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US Patent:
20140042574, Feb 13, 2014
Filed:
Apr 27, 2012
Appl. No.:
14/113562
Inventors:
Gregory P. Carman - Los Angeles CA, US
Tao Wu - Hillsboro OR, US
Alexandre Bur - Lausanne, CH
Pedram Khalili Amiri - Los Angeles CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 43/10
H01L 43/02
US Classification:
257421
Abstract:
A ferroelectric device includes a first electrode, a second electrode spaced apart from the first electrode, and a ferroelectric element arranged between the first and second electrodes. The ferroelectric element has a plurality of quasistatic strain configurations that are selectable by the application of an electric field and the device has selectable electromechanical displacement by the application of the electric field.

Artificial Neural Networks Using Magnetoresistive Random-Access Memory-Based Stochastic Computing Units

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US Patent:
20220309329, Sep 29, 2022
Filed:
Mar 24, 2022
Appl. No.:
17/703015
Inventors:
- Evanston IL, US
Pedram Khalili Amiri - Chicago IL, US
International Classification:
G06N 3/063
G06N 3/04
G06F 7/58
Abstract:
A stochastic computing artificial neural network (SC-ANN) includes magnetic tunnel junction (MTJ) devices configured as true random number generators (TRNGs) to output stochastic bit-streams of random numbers for processing by input, hidden, and/or output nodes of the ANN. The processing may include multiplication by a weighting value corresponding to a respective numerical value from the stochastic bit-streams.

Electric-Field-Induced Switching Of Antiferromagnetic Memory Devices

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US Patent:
20210383850, Dec 9, 2021
Filed:
Jul 17, 2019
Appl. No.:
17/260113
Inventors:
- EVANSTON IL, US
Pedram Khalili Amiri - Chicago IL, US
International Classification:
G11C 11/16
Abstract:
A new type of two-terminal magnetic memory device, referred to as antiferromagnetic voltage-controlled memory (AVM) device is disclosed. Antiferromagnetic (AFM) materials have zero magnetization, which makes it immune to external magnetic fields and opens to the possibility to implement high-density arrays without dipole coupling between adjacent devices. The AVM device combines a new state variable e.g., Néel vector l in a metallic (or non-metallic) AFM material with an electric-field-induced switching mechanism for writing of information. Utilizing electric fields E via an interfacial voltage-controlled magnetic anisotropy (VCMA) effect is a more efficient writing mechanism. The AVM device implements an antiferromagnetic tunnel junction (AFM-TJ) structure to exhibit high or low resistance states (HR, LR) corresponding to binary logic states of zero (0) or one (1). Both the AVM device structure and methods of writing a signal to the AVM device are disclosed.

Periodically Rippled Antenna

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US Patent:
20180123251, May 3, 2018
Filed:
Oct 17, 2017
Appl. No.:
15/786039
Inventors:
- Oakland CA, US
- Riyadh, SA
Pedram Khalili Amiri - Los Angeles CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY - Riyadh
International Classification:
H01Q 9/04
H01Q 1/38
H01Q 1/48
Abstract:
A periodically-rippled patch antenna structure with metal coated trenches only along one in-plane direction or in two perpendicular in-plane directions on a dielectric substrate and ground plane and methods of fabricating the antenna radiating elements are provided. An optional layer of oxide or nitride can be placed between the substrate and metal layers as an insulation layer. This use of trenches allows for miniaturization of the patch antenna as well as dual-band degeneracy. When a square 1D rippled patch antenna is excited by a microstrip line connected along the ripples, the effective length is longer than with a line orthogonal to the ripples enabling dual mode degeneracy and antennas working at two distinct frequencies of operation.

Fast And Low-Power Sense Amplifier And Writing Circuit For High-Speed Mram

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US Patent:
20170084322, Mar 23, 2017
Filed:
May 5, 2015
Appl. No.:
14/704936
Inventors:
- Oakland CA, US
Pedram Khalili Amiri - Los Angeles CA, US
Hochul Lee - Los Angeles CA, US
Juan G. Alzate - Los Angeles CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
G11C 11/16
Abstract:
A fast and low-power sense amplifier and writing circuit for high-speed Magnetic RAM (MRAM) which provides the long retention times and endurance of magnetic tunnel junction (MTJ) cells, while providing faster access speeds, verified writes, and an increased sensing margin. A high-speed and low-power pre-read and write sense amplifier (PWSA) provide VCMA effect precessional switching of MTJ cells which include pre-read and comparison steps which reduce power consumption. An embodiment of the PWSA circuit is described with write and pre-charge circuit, S and D latches, comparison circuit, and a differential amplifier and control circuit.

Multiple-Bits-Per-Cell Voltage-Controlled Magnetic Memory

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US Patent:
20150137289, May 21, 2015
Filed:
Dec 8, 2014
Appl. No.:
14/562978
Inventors:
- Oakland CA, US
Pedram Khalili Amiri - Los Angeles CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 27/22
H01L 43/12
H01L 43/10
H01L 43/02
H01L 43/08
US Classification:
257421, 438 3
Abstract:
Voltage controlled magneto-electric tunnel junctions and memory devices are described which provide efficient high speed voltage switching of non-volatile magnetic devices (MeRAM) at high cell densities. A multi-bit-per-cell (MBPC) MeRAM is described which requires only a single transistor to write and read two data bits from the one MBPC MeRAM cell.

Magnetic Memory Bits With Perpendicular Magnetization Switched By Current-Induced Spin-Orbit Torques

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US Patent:
20150129995, May 14, 2015
Filed:
Oct 30, 2014
Appl. No.:
14/528732
Inventors:
- Oakland CA, US
Pedram Khalili Amiri - Los Angeles CA, US
Guoqiang Yu - Los Angeles CA, US
Pramey Upadhyaya - Los Angeles CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 43/02
H01L 43/12
H01L 43/10
US Classification:
257421, 438 3
Abstract:
A basic Spin-Orbit-Torque (SOT) structure with lateral structural asymmetry is provided that produces a new spin-orbit torque, resulting in zero-field current-induced switching of perpendicular magnetization. More complex structures can also be produced incorporating the basic structure of a ferromagnetic layer with a heavy non-magnetic metal layer having strong spin-orbit coupling on one side, and an insulator layer on the other side with a structural mirror asymmetry along the in-plane direction. The lateral structural asymmetry and new spin-orbit torque, in effect, replaces the role of the external in-plane magnetic field. The direction of switching is determined by the combination of the direction of applied current and the direction of symmetry breaking in the device.

Voltage-Controlled Magnetic Memory Element With Canted Magnetization

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US Patent:
20140169085, Jun 19, 2014
Filed:
Dec 9, 2013
Appl. No.:
14/101260
Inventors:
- Oakland CA, US
Pedram Khalili Amiri - Los Angeles CA, US
Juan G. Alzate - Los Angeles CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 43/02
H01L 27/22
G11C 11/16
H01L 43/10
US Classification:
365158, 257421
Abstract:
A memory cell including information that is stored in the state of a magnetic bit (i.e. in a free layer, FL), where the FL magnetization has two stable states that may be canted (form an angle) with respect to the horizontal and vertical directions of the device is presented. The FL magnetization may be switched between the two canted states by the application of a voltage (i.e. electric field), which modifies the perpendicular magnetic anisotropy of the free layer.
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Pedram Khalili Amiri from Wilmette, IL, age ~43 Get Report