Search

Paul Dennis Sunal

from Alexandria, VA
Age ~51
Get Report
Also known as:
Paul D Sunal, Paul Sural
Phone and address:
4610 Deming Ave, Alexandria, VA 22312
(703) 413-2059
Related to:
Daniella E Lopez, 32Kathy Marti, 42Cynthia SunalIsrael Lopez, 51Richard Stamper, 86Christina Lopez, 39
Connected to:
Yumi M Sunamoto, 45Vera Sunanto, 49Kiran K Sunar, 32Mehmet M Sunar, 51Ram K Sunar, 33David Sunarko, 39Dewi Sunarya, 100Karen S Sunberg, 60Stacy A Sunberg, 54Pedro J Suncar, 81

Paul Sunal Phones & Addresses

  • 4610 Deming Ave, Alexandria, VA 22312 (703) 413-2059
  • Arlington, VA
  • 4462 Cricket Ridge Dr, Holt, MI 48842
  • 737 Elmwood St, State College, PA 16801
  • 119 Locust Ln, State College, PA 16801
  • 1000 Aaron Dr, State College, PA 16803
  • Dearborn, MI
  • Tuscaloosa, AL
  • Gainesville, FL
  • 4610 Deming Ave, Alexandria, VA 22312

Work

Company: Cnri Apr 2006 to Apr 2014 Position: Senior process engineer

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Penn State University 2001 to 2005 Specialities: Engineering

Skills

Materials Science • Nanotechnology • Composites • Afm • Mems • Fabrication • Sputtering • Materials • Semiconductors • Metal Fabrication • Optics • Thin Films • Thin Film Coating • Thin Film Characterization • Nanofabrication • Microfluidics • Characterization

Industries

Nanotechnology

Public records

Vehicle Records

Paul D Sunal

View page
Address:
1101 S Joyce St APT 2544, Arlington, VA 22202
VIN:
2HGFG11677H508312
Make:
HONDA
Model:
CIVIC
Year:
2007

Resumes

Resumes

Paul Sunal Photo 1

Nanofabrication Cleanroom Facility Manager

View page
Location:
Washington, DC
Industry:
Nanotechnology
Work:
Cnri Apr 2006 - Apr 2014
Senior Process Engineer
Us Army Apr 2006 - Apr 2014
Nanofabrication Cleanroom Facility Manager
University of Michigan Sep 1999 - Jan 2001
Process Engineer
Education:
Penn State University 2001 - 2005
Doctorates, Doctor of Philosophy, Engineering Penn State University 1997 - 1999
Master of Science, Masters, Engineering University of Florida 1994 - 1996
Bachelors, Bachelor of Science, Materials Science, Engineering The University of Alabama
Skills:
Materials Science
Nanotechnology
Composites
Afm
Mems
Fabrication
Sputtering
Materials
Semiconductors
Metal Fabrication
Optics
Thin Films
Thin Film Coating
Thin Film Characterization
Nanofabrication
Microfluidics
Characterization

Business Records

Name / Title
Company / Classification
Phones & Addresses
Paul Sunal
Director of Engineering
Mems Exchange
Membership Organization · Nonclassifiable Establishments
1895 Preston White Dr, Herndon, VA 20191
(703) 262-5368

Publications

Us Patents

Method For The Fabrication Of Electron Field Emission Devices Including Carbon Nanotube Field Electron Emisson Devices

View page
US Patent:
20120301981, Nov 29, 2012
Filed:
May 23, 2011
Appl. No.:
13/113378
Inventors:
Mehmet OZGUR - Reston VA, US
Paul SUNAL - Arlington VA, US
Lance OH - Columbia MD, US
Michael HUFF - Oakton VA, US
Michael PEDERSEN - Ashton MD, US
International Classification:
H01L 21/62
B82Y 40/00
US Classification:
438 20, 438701, 977842, 257E21249, 257E2152
Abstract:
The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

Tailorable Titanium-Tungsten Alloy Material Thermally Matched To Semiconductor Substrates And Devices

View page
US Patent:
20100108254, May 6, 2010
Filed:
Jun 30, 2009
Appl. No.:
12/458073
Inventors:
Michael A. Huff - Oakton VA, US
Paul Sunal - Arlington VA, US
Assignee:
Corporation for National Research Initiatives - Reston VA
International Classification:
B32B 37/00
C23C 16/00
C22C 1/00
B32B 38/00
B23H 9/00
B22D 25/00
US Classification:
156281, 427250, 75392, 219 6917, 164 47
Abstract:
The present invention relates generally to a metallic alloy composed of Titanium and Tungsten that together form an alloy having a Coefficient of Thermal Expansion (CTE), wherein the content of the respective constituents can be adjusted so that the alloy material can be nearly perfectly matched to that of a commonly used semiconductor and ceramic materials. Moreover, alloys of Titanium-Tungsten have excellent electrical and thermal conductivities making them ideal material choices for many electrical, photonic, thermoelectric, MMIC, NEMS, nanotechnology, power electronics, MEMS, and packaging applications. The present invention describes a method for designing the TiW alloy so as to nearly perfectly match the coefficient of thermal expansion of a large number of different types of commonly used semiconductor and ceramic materials. The present invention also describes a number of useful configurations wherein the TiW material is made as well as how it can be shaped, formed and polished into heat sink, heat spreaders, and electrodes for many applications. The present invention also discloses the direct bonding of a TiW substrate to a semiconductor substrate.

Method For The Fabrication Of Electron Field Emission Devices Including Carbon Nanotube Electron Field Emission Devices

View page
US Patent:
20190355538, Nov 21, 2019
Filed:
Jul 31, 2019
Appl. No.:
16/527533
Inventors:
- Reston VA, US
Paul SUNAL - Arlington VA, US
Lance OH - Columbia MD, US
Michael HUFF - Oakton VA, US
Michael PEDERSEN - Ashton MD, US
International Classification:
H01J 1/304
B82Y 40/00
H01J 9/02
B82Y 10/00
Abstract:
The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto an electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

Method For The Fabrication Of Electron Field Emission Devices Including Carbon Nanotube Electron Field Emission Devices

View page
US Patent:
20180197711, Jul 12, 2018
Filed:
Dec 22, 2017
Appl. No.:
15/853485
Inventors:
- Reston VA, US
Paul Sunal - Arlington VA, US
Lance Oh - Columbia MD, US
Michael Huff - Oakton VA, US
Michael Pedersen - Ashton MD, US
International Classification:
H01J 1/304
H01J 9/02
B82Y 10/00
B82Y 40/00
Abstract:
The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
Control profile
Paul Dennis Sunal from Alexandria, VA, age ~51 Get Report