Search

Paul Shufflebotham Phones & Addresses

  • 1667 Hurst Ave, San Jose, CA 95125 (408) 666-1231
  • 1574 Willowdale Dr, San Jose, CA 95118
  • Campbell, CA
  • Truckee, CA
  • Fremont, CA
  • La Mesa, CA

Resumes

Resumes

Paul Shufflebotham Photo 1

Paul Shufflebotham

View page
Location:
San Jose, CA
Industry:
Industrial Automation
Work:
Independent Engineering and Technology Management Consulting - San Jose, CA since Aug 2012
Consultant

MiaSole - Santa Clara Jan 2012 - Aug 2012
Vice President & General Manager, Flexible PV Products

MiaSole - Santa Clara Oct 2007 - Feb 2012
Vice President of Engineering

KLA-Tencor - San Jose, CA Sep 2006 - Oct 2007
Vice President, Metrology Engineering Group

Novellus Systems - San Jose, CA Jan 2004 - Sep 2004
General Manager, Aluminum PVD Business Unit
Education:
University of Manitoba 1979 - 1990
Skills:
Semiconductors
Photovoltaics
R&D
Thin Films
Manufacturing
Semiconductor Industry
Product Development
Solar Energy
Project Management
Problem Solving
Program Management
Strategic Planning
Engineering Management
Engineering
Metrology
Executive Management
Failure Analysis
New Business Development
Semiconductor Process
Product Management
Intellectual Property
Pvd
Plasma Processing
Crisis Management
Turn Around Management
Product Innovation
Cvd
Technology Product Development
Product Introduction
Semiconductor Fabrication
Paul Shufflebotham Photo 2

Paul Shufflebotham

View page

Business Records

Name / Title
Company / Classification
Phones & Addresses
Paul Shufflebotham
Vice President
Miasol
2590 Walsh Ave, Santa Clara, CA 95051

Publications

Us Patents

Predictive Wafer Temperature Control System And Method

View page
US Patent:
6468384, Oct 22, 2002
Filed:
Nov 9, 2000
Appl. No.:
09/710083
Inventors:
Vikram Singh - Fremont CA
Robert J. Whiting - Santa Clara CA
Paul K. Shufflebotham - San Jose CA
Ajay Saproo - Mountain View CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
C23F 100
US Classification:
15634527, 15634524, 118723 E
Abstract:
The present invention provides plasma processing systems and methods for providing a set-point temperature for substrates during plasma processing by controlling clamping force or RF power. The plasma processing system includes a plasma chamber, a controller, and an electrostatic power supply. The plasma chamber is arranged to receive an RF power and a source gas for producing plasma. The plasma chamber includes an electrostatic chuck for clamping a substrate in place during plasma processing. The electrostatic chuck includes an electrode and a sensor, which is arranged to monitor temperature of the substrate being processed. The controller is coupled to the sensor to receive the substrate temperature and is configured to generate a control signal for driving the substrate temperature to the set-point temperature. The electrostatic power supply is coupled between the controller and the electrode in the electrostatic chuck. The electrostatic power supply receives the control signal from the controller and generates a voltage adapted to clamp the substrate with a clamping force.

Method Of Depositing A Silicon Containing Layer On A Semiconductor Substrate

View page
US Patent:
6626185, Sep 30, 2003
Filed:
Mar 4, 1999
Appl. No.:
09/262019
Inventors:
Alex Demos - San Francisco CA
Paul Kevin Shufflebotham - San Jose CA
Michael Barnes - San Francisco CA
Huong Nguyen - Danville CA
Brian McMillin - Fremont CA
Monique Ben-Dor - Palo Alto CA
Assignee:
LAM Research Corporation - Fremont CA
International Classification:
B08B 704
US Classification:
134 11, 134 2218, 438680, 438905
Abstract:
A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

Method And Apparatus For Abatement Of Reaction Products From A Vacuum Processing Chamber

View page
US Patent:
6888040, May 3, 2005
Filed:
Jun 28, 1996
Appl. No.:
08/671684
Inventors:
Paul Kevin Shufflebotham - San Jose CA, US
Michael Barnes - San Francisco CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B01D053/70
US Classification:
588212, 588206, 588210, 423240 R, 423240 S, 95131, 95233
Abstract:
An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.

Sulfur Salt Containing Cig Targets, Methods Of Making And Methods Of Use Thereof

View page
US Patent:
8048707, Nov 1, 2011
Filed:
Oct 19, 2010
Appl. No.:
12/907652
Inventors:
Paul Shufflebotham - San Jose CA, US
Daniel R. Juliano - Santa Clara CA, US
Robert Tas - Aromas CA, US
Neil Mackie - Fremont CA, US
Assignee:
MiaSole - Santa Clara CA
International Classification:
H01L 31/032
US Classification:
438 62, 20429813, 257E31028, 438 95
Abstract:
A method of making a photovoltaic device includes forming a compound semiconductor layer including copper, indium, gallium, selenium and sulfur by reactive sputtering at least one target including copper, indium, gallium and a sulfur compound in an atmosphere including selenium.

Inductively Coupled Plasma Cvd

View page
US Patent:
20010019903, Sep 6, 2001
Filed:
Feb 5, 2001
Appl. No.:
09/775664
Inventors:
Paul Kevin Shufflebotham - San jose CA, US
Brian McMillin - Fremont CA, US
Alex Demos - San Francisco CA, US
Huong Nguyen - Danville CA, US
Butch Berney - Pleasanton CA, US
Monique Ben-Dor - Palo Alto CA, US
International Classification:
C23C016/00
H01L021/31
US Classification:
438/788000, 427/569000, 427/255280, 118/72300R
Abstract:
A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

Method And Apparatus For Abatement Of Reaction Products From A Vacuum Processing Chamber

View page
US Patent:
20050155854, Jul 21, 2005
Filed:
Dec 22, 2004
Appl. No.:
11/017637
Inventors:
Paul Shufflebotham - San Jose CA, US
Michael Barnes - San Francisco CA, US
International Classification:
B01J019/08
B01J019/12
US Classification:
204164000, 422186000, 422186290
Abstract:
An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.

Polishing A Thin Metallic Substrate For A Solar Cell

View page
US Patent:
20100258173, Oct 14, 2010
Filed:
Apr 13, 2009
Appl. No.:
12/422620
Inventors:
Joseph LAIA - Morgan Hill CA, US
Paul Shufflebotham - San Jose CA, US
Daniel R. Juliano - Santa Clara CA, US
Robert Martinson - Palo Alto CA, US
Timothy Kueper - Santa Clara CA, US
International Classification:
H01L 31/00
B24B 1/00
H01L 21/304
US Classification:
136256, 451 36, 451 59, 438 57, 257E21237
Abstract:
A method for fabricating a solar cell. The method includes providing a thin metallic substrate in roll form. The method also includes applying an abrasive grit to a surface of the thin metallic substrate. The method includes mechanical-polishing the surface with the abrasive grit such that the surface is polished to remove at least one defect from the surface. Mechanical-polishing the surface of the thin metallic substrate is by a roll-to-roll polishing process of the surface of the thin metallic substrate. Moreover, the method includes depositing an absorber layer of the solar cell on the thin metallic substrate.

Photovoltaic Module Electrical Connectors

View page
US Patent:
20110308562, Dec 22, 2011
Filed:
Jun 22, 2010
Appl. No.:
12/820408
Inventors:
Paul Shufflebotham - San Jose CA, US
Assignee:
MIASOLE - Santa Clara CA
International Classification:
H01L 31/042
H01L 31/00
US Classification:
136244, 136256
Abstract:
Provided are novel photovoltaic module electrical connectors, photovoltaic assemblies including these connectors, and techniques for installing these connectors to sealed photovoltaic modules. According to various embodiments, the connectors have conductive contact tips that are configured to pierce through a module exterior and form an electrical connection to the photovoltaic cells sealed inside. In certain embodiments, the novel photovoltaic module electrical connectors can be positioned at any location along one or more edges of a module to establish an electrical connection to any cell of the module. The conductive contact tips establish mechanical contacts with contact layers inside the modules, and in certain embodiments partially or completely penetrate the contact layers, without shorting the photovoltaic cells. In certain embodiments, the connectors have positive stop features that control penetration distances of the conductive contact tips into a module.
Paul K Shufflebotham from San Jose, CA, age ~64 Get Report