Paul M Raccah

46209689, Nov 4, 1986

Sep 17, 1982

6/419537

Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL

Stauffer Chemical Company - Westport CT

C01B 2500
C01B 2501
C01B 2502
C04B 3500

423299

Monoclinic phosphorus is produced in a single source vapor transport apparatus comprising a sealed evacuated ampoule containing a mixture or compound of phosphorus and an alkali metal with the phosphorus to alkali metal ratio being 11 or greater. The charge is heated to 550. degree. -560. degree. C. and the monoclinic phosphorus crystals are formed on the cooler surface at the top of the ampoule over the temperature range of 500. degree. -560. degree. C. The preferred heating temperature is in the neighborhood of 555. degree. C. and the preferred deposition temperature is in the neighborhood of 539. degree. C. Alkali metals that may be employed include sodium, potassium, rubidium and cesium. The monoclinic phosphorus crystals form in two habits. Those formed in the presence of sodium and cesium are in the form of flat square platelets up to 4 mm on a side and 2 mm thick.

47131926, Dec 15, 1987

Dec 4, 1984

6/677911

Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL

Stauffer Chemical Company - Westport CT

H01L 2134
H01L 2138

252 623R

High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

46968288, Sep 29, 1987

May 21, 1985

6/736750

Rozalie Schachter - Flushing NY
Marcello Viscogliosi - North Tarrytown NY
Lewis A. Bunz - Peekskill NY
Diego J. Olego - Croton-on-Hudson NY
Harvey B. Serreze - Pound Ridge NY
Paul M. Raccah - Chicago IL

Stauffer Chemical Company - Westport CT

B05D 306

427 38

Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the , and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metalsemiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component.

48225819, Apr 18, 1989

Dec 4, 1984

6/677845

Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL

Stauffer Chemical Company - Westport CT

C01B 2508

423302

High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconducutors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

45089310, Apr 2, 1985

Nov 16, 1982

6/442208

Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL

Stauffer Chemical Company - Westport CT

H01L 3106

136255

High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

42218276, Sep 9, 1980

Dec 19, 1978

5/970878

John M. Parry - Sudbury MA
Paul Raccah - Chicago IL

The United States of America as represented by the Secretary of the
Interior - Washington DC

G01N 2704
H01C 1300

427125

A system for detecting carbon monoxide, even in the presence of methane, using a catalytic sensor material having a perovskite crystal structure and a composition A. sub. 1-n B. sub. n CO. sub. 3-m where A is a rare earth metal; B is an alkaline metal; C is a metal from the group consisting of cobalt, vanadium and maganese; O is oxygen; n is less than 0. 1; and m is not greater than 0. 5, which material is substantially free of oxides of A, B and C. The method of making the crystalline material involves firing appropriate amounts of mixed salts of A, B and C until substantially converted to the perovskite structure, and then leaching with a caustic to remove the undesired oxides.

48186368, Apr 4, 1989

Dec 11, 1984

6/680367

Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL

Stauffer Chemical Company - Westport CT

B32B 900
B32B 1300

428704

High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

50324721, Jul 16, 1991

Mar 13, 1989

7/322688

Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL

Stauffer Chemical Company - Westport CT

B32B 904

428704

High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.