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Paul Raccah Phones & Addresses

  • 7521 Albany Ave, Chicago, IL 60645
  • 3053 Jerome St, Chicago, IL 60645
  • 3055 Jerome St, Chicago, IL 60645
  • 2721 W Fargo Ave, Chicago, IL 60645

Publications

Us Patents

Monoclinic Phosphorus Formed From Vapor In The Presence Of An Alkali Metal

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US Patent:
46209689, Nov 4, 1986
Filed:
Sep 17, 1982
Appl. No.:
6/419537
Inventors:
Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL
Assignee:
Stauffer Chemical Company - Westport CT
International Classification:
C01B 2500
C01B 2501
C01B 2502
C04B 3500
US Classification:
423299
Abstract:
Monoclinic phosphorus is produced in a single source vapor transport apparatus comprising a sealed evacuated ampoule containing a mixture or compound of phosphorus and an alkali metal with the phosphorus to alkali metal ratio being 11 or greater. The charge is heated to 550. degree. -560. degree. C. and the monoclinic phosphorus crystals are formed on the cooler surface at the top of the ampoule over the temperature range of 500. degree. -560. degree. C. The preferred heating temperature is in the neighborhood of 555. degree. C. and the preferred deposition temperature is in the neighborhood of 539. degree. C. Alkali metals that may be employed include sodium, potassium, rubidium and cesium. The monoclinic phosphorus crystals form in two habits. Those formed in the presence of sodium and cesium are in the form of flat square platelets up to 4 mm on a side and 2 mm thick.

Doping Of Catenated Phosphorus Materials

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US Patent:
47131926, Dec 15, 1987
Filed:
Dec 4, 1984
Appl. No.:
6/677911
Inventors:
Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL
Assignee:
Stauffer Chemical Company - Westport CT
International Classification:
H01L 2134
H01L 2138
US Classification:
252 623R
Abstract:
High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Passivation Of Inp By Plasma Deposited Phosphorus

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US Patent:
46968288, Sep 29, 1987
Filed:
May 21, 1985
Appl. No.:
6/736750
Inventors:
Rozalie Schachter - Flushing NY
Marcello Viscogliosi - North Tarrytown NY
Lewis A. Bunz - Peekskill NY
Diego J. Olego - Croton-on-Hudson NY
Harvey B. Serreze - Pound Ridge NY
Paul M. Raccah - Chicago IL
Assignee:
Stauffer Chemical Company - Westport CT
International Classification:
B05D 306
US Classification:
427 38
Abstract:
Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the <100> <110>, and <111> surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metalsemiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component.

Catenated Phosphorus Materials And Their Preparation

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US Patent:
48225819, Apr 18, 1989
Filed:
Dec 4, 1984
Appl. No.:
6/677845
Inventors:
Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL
Assignee:
Stauffer Chemical Company - Westport CT
International Classification:
C01B 2508
US Classification:
423302
Abstract:
High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconducutors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Catenated Phosphorus Materials, Their Preparation And Use, And Semiconductor And Other Devices Employing Them

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US Patent:
45089310, Apr 2, 1985
Filed:
Nov 16, 1982
Appl. No.:
6/442208
Inventors:
Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL
Assignee:
Stauffer Chemical Company - Westport CT
International Classification:
H01L 3106
US Classification:
136255
Abstract:
High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Method Of Manufacturing A Gas Sensor

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US Patent:
42218276, Sep 9, 1980
Filed:
Dec 19, 1978
Appl. No.:
5/970878
Inventors:
John M. Parry - Sudbury MA
Paul Raccah - Chicago IL
Assignee:
The United States of America as represented by the Secretary of the
Interior - Washington DC
International Classification:
G01N 2704
H01C 1300
US Classification:
427125
Abstract:
A system for detecting carbon monoxide, even in the presence of methane, using a catalytic sensor material having a perovskite crystal structure and a composition A. sub. 1-n B. sub. n CO. sub. 3-m where A is a rare earth metal; B is an alkaline metal; C is a metal from the group consisting of cobalt, vanadium and maganese; O is oxygen; n is less than 0. 1; and m is not greater than 0. 5, which material is substantially free of oxides of A, B and C. The method of making the crystalline material involves firing appropriate amounts of mixed salts of A, B and C until substantially converted to the perovskite structure, and then leaching with a caustic to remove the undesired oxides.

Films Of Catenated Phosphorus Materials, Their Preparation And Use, And Semiconductor And Other Devices Employing Them

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US Patent:
48186368, Apr 4, 1989
Filed:
Dec 11, 1984
Appl. No.:
6/680367
Inventors:
Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL
Assignee:
Stauffer Chemical Company - Westport CT
International Classification:
B32B 900
B32B 1300
US Classification:
428704
Abstract:
High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.

Films Of Catenated Phosphorus Materials, Their Preparation And Use, And Semiconductor And Other Devices Employing Them

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US Patent:
50324721, Jul 16, 1991
Filed:
Mar 13, 1989
Appl. No.:
7/322688
Inventors:
Christian G. Michel - Ossining NY
Rozalie Schachter - New York NY
Mark A. Kuck - Upper Montclair NJ
John A. Baumann - Dobbs Ferry NY
Paul M. Raccah - Chicago IL
Assignee:
Stauffer Chemical Company - Westport CT
International Classification:
B32B 904
US Classification:
428704
Abstract:
High phosphorus polyphosphides, namely MP. sub. x, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP. sub. 15 appears to have the best properties and KP. sub. 15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible.
Paul M Raccah from Chicago, ILDeceased Get Report