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Pamela M Visintin

from Charleston, SC
Age ~47
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Related to:
Paul M Martin, 77Leo A MartinKerry A Martin, 75Stevie Monroy, 43Miguel Monroy, 73Angelica Love, 54Ana Monroy, 51Robert Monroy, 53
Connected to:
Frank D Visintini, 59Priscilla C Visintine, 67Christine M Visita, 38Jay T Visitacion, 50Joel L Visitacion, 59Travis Visitew, 42Kendra A Visker, 41Miles B Visker, 76Roelof Viskil, 34Maggie Viskniskki, 51

Pamela Visintin Phones & Addresses

  • 439 Sanders Farm Ln, Charleston, SC 29492
  • Wando, SC
  • Red Hook, NY
  • Danbury, CT
  • 100 Rock Haven Rd, Carrboro, NC 27510 (919) 918-7851 (919) 918-7997 (919) 933-1612
  • Lafayette Hill, PA
  • New Paltz, NY

Work

Company: Sun chemical Oct 2017 Position: Manager of high performance pigments technology

Education

Degree: Doctorates, Doctor of Philosophy School / High School: University of North Carolina at Chapel Hill 2000 to 2004 Specialities: Chemistry

Skills

Chemistry • R&D • Materials Science • Analytical Chemistry • Polymers • Spectroscopy • Design of Experiments • Characterization • Uv/Vis • Product Development • Six Sigma • Manufacturing • Polymer Chemistry • Nanotechnology • Organic Chemistry • Materials

Industries

Chemicals

Resumes

Resumes

Pamela Visintin Photo 1

Manager Of High Performance Pigments Technology

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Location:
Charleston, SC
Industry:
Chemicals
Work:
Sun Chemical
Manager of High Performance Pigments Technology
Sun Chemical
R and D Scientist
Entegris Nov 2004 - Dec 2007
R and D Scientist and Engineer
Education:
University of North Carolina at Chapel Hill 2000 - 2004
Doctorates, Doctor of Philosophy, Chemistry Ursinus College 1996 - 2000
Bachelors, Bachelor of Science, Chemistry
Skills:
Chemistry
R&D
Materials Science
Analytical Chemistry
Polymers
Spectroscopy
Design of Experiments
Characterization
Uv/Vis
Product Development
Six Sigma
Manufacturing
Polymer Chemistry
Nanotechnology
Organic Chemistry
Materials

Publications

Us Patents

Formulations For Cleaning Ion-Implanted Photoresist Layers From Microelectronic Devices

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US Patent:
8114220, Feb 14, 2012
Filed:
Apr 14, 2006
Appl. No.:
11/911616
Inventors:
Pamela M. Visintin - Red Hook NY, US
Michael B. Korzenski - Danbury CT, US
Thomas H. Baum - New Fairfield CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
B08B 3/04
C11D 1/00
C11D 3/28
C11D 3/26
US Classification:
134 12, 134 13, 510175, 510176, 510245, 510255, 510258, 510264, 510477, 510488, 510499, 510500, 510504, 510505, 510506
Abstract:
A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.

Composition And Method For Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon

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US Patent:
8642526, Feb 4, 2014
Filed:
May 9, 2011
Appl. No.:
13/103536
Inventors:
Pamela M. Visintin - North Charleston SC, US
Ping Jiang - Danbury CT, US
Michael B. Korzenski - Danbury CT, US
Mackenzie King - Southbury CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
G03F 7/42
US Classification:
510175, 510176, 252 791, 252 793, 134 13
Abstract:
A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Metal Chelation In Carbon Dioxide

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US Patent:
20040175948, Sep 9, 2004
Filed:
Oct 10, 2003
Appl. No.:
10/683049
Inventors:
Joseph DeSimone - Chapel Hill NC, US
Pamela Visintin - Carrboro NC, US
Ginger Denison - Durham NC, US
Carol Bessel - Norristown PA, US
Cynthia Schauer - Carrboro NC, US
Stephen Gross - Chapel Hill NC, US
Assignee:
The University of North Carolina at Chapel Hill
International Classification:
H01L021/302
H01L021/461
US Classification:
438/690000
Abstract:
Chemical mechanical polishing compositions including a carbon dioxide-based solvent, an oxidizing agent, and a chelating agent are formed and used with CMP processes and systems. Methods for determining the endpoint of a CMP process are also provided.

Removal Of High-Dose Ion-Implanted Photoresist Using Self-Assembled Monolayers In Solvent Systems

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US Patent:
20070251551, Nov 1, 2007
Filed:
Oct 25, 2006
Appl. No.:
11/552808
Inventors:
Michael Korzenski - Danbury CT, US
Pamela Visintin - Red Hook NY, US
Thomas Baum - Fairfield CT, US
International Classification:
C23G 1/02
US Classification:
134041000, 510109000
Abstract:
A method and self assembled monolayer (SAM)-containing compositions for removing bulk and hardened photoresist material from microelectronic devices have been developed. The SAM-containing composition includes at least one solvent, at least one catalyst, at least one SAM component, and optionally a surfactant. The SAM-containing compositions effectively remove the hardened photoresist material while simultaneously passivating the underlying silicon-containing layer(s) in a one step process.

Formulations For Cleaning Memory Device Structures

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US Patent:
20080125342, May 29, 2008
Filed:
Nov 6, 2007
Appl. No.:
11/935838
Inventors:
Pamela M. Visintin - Red Hook NY, US
Michael B. Korzenski - Danbury CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C11D 3/02
C11D 3/08
C11D 3/06
C11D 3/28
C11D 3/43
C11D 1/00
US Classification:
510175
Abstract:
A removal composition and process for removing silicon-containing layers from a microelectronic device having said layers thereon. The removal composition selectively removes layers including, but not limited to, silicon oxide, plasma enhanced tetraethyl orthosilicate (P-TEOS), borophosphosilicate glass (BPSG), plasma enhanced oxide (PEOX), high density plasma oxide (HDP), phosphosilicate glass (PSG), spin-on-dielectrics (SOD), thermal oxide, updoped silicate glass, sacrificial oxides, silicon-containing organic polymers, silicon-containing hybrid organic/inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), hemispherical grain (HSQ), carbon-doped oxide (CDO) glass, and combinations thereof, relative to lower electrode, device substrate, and/or etch stop layer materials.

Composition And Method For Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon

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US Patent:
20080261847, Oct 23, 2008
Filed:
Nov 9, 2006
Appl. No.:
12/093290
Inventors:
Pamela M. Visintin - North Charleston SC, US
Ping Jiang - Danbury CT, US
Michael B. Korzenski - Danbury CT, US
Mackenzie King - Southbury CT, US
Assignee:
ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT
International Classification:
G03F 7/42
C11D 7/32
US Classification:
510176, 510175
Abstract:
A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Apparatus And Method For Supercritical Fluid Removal Or Deposition Processes

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US Patent:
20080271991, Nov 6, 2008
Filed:
Apr 17, 2006
Appl. No.:
11/911615
Inventors:
Michael B. Korzenski - Danbury CT, US
Eliodor G. Ghenciu - King of Prussia PA, US
Chongying Xu - New Milford CT, US
Thomas H. Baum - New Fairfield CT, US
Pamela M. Visintin - Red Hook NY, US
Assignee:
Advanced Technology Materials , Inc. - Danbury CT
International Classification:
C23C 14/00
US Classification:
20419232, 20429833
Abstract:
A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably includes a dynamic mixer to ensure homogeneous mixing of the SCF and other chemical components.

Dense Fluid Compositions For Removal Of Hardened Photoresist, Post-Etch Residue And/Or Bottom Anti-Reflective Coating

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US Patent:
20090192065, Jul 30, 2009
Filed:
Jun 16, 2006
Appl. No.:
11/917654
Inventors:
Michael B. Korzenski - Danbury CT, US
Pamela M. Visintin - North Charleston SC, US
Thomas H. Baum - New Fairfield CT, US
David W. Minsek - New Milford CT, US
Chongying Xu - New Milford CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
G03F 7/42
US Classification:
510176, 510175
Abstract:
A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device.
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Pamela M Visintin from Charleston, SC, age ~47 Get Report