Orlando Hector Auciello

6422077, Jul 23, 2002

Apr 6, 2000

09/543992

Alan R. Krauss - Naperville IL
Dieter M. Gruen - Downers Grove IL
Michael J. Pellin - Naperville IL
Orlando Auciello - Bolingbrook IL

The University of Chicago - Argonne IL

G01P 1508

7351425, 7351427, 7351436, 73723, 73105

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V /N required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made.

6613601, Sep 2, 2003

May 9, 2002

10/142814

Alan R. Krauss - Naperville IL
Dieter M. Gruen - Downers Grove IL
Michael J. Pellin - Naperville IL
Orlando Auciello - Bolingbrook IL

The University of Chicago - Chicago IL

H01L 2100

438 52, 7386209, 7350415, 7351432

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V /V required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made.

6793849, Sep 21, 2004

Dec 12, 2003

10/398427

Dieter M. Gruen - Downers Grove IL
Alan R. Krauss - late of Naperville IL
Orlando H. Auciello - Bolingbrook IL
John A. Carlisle - Plainfield IL

The University of Chicago - Chicago IL

H01B 104

252502, 117 88, 117929, 423446, 427577, 427585, 427249, 4272497, 4272498

An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10 atoms/cm of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.

6811612, Nov 2, 2004

Nov 8, 2002

10/169879

Dieter M. Gruen - Downers Grove IL
Hans-Gerd Busmann - Bremen, DE
Eva-Maria Meyer - Bremen, DE
Orlando Auciello - Bolingbrook IL
Alan R. Krauss - late of Naperville IL

The University of Chicago - Chicago IL

C30B 2304

117 94, 117 95, 117101, 117104, 117929, 423446, 423445 B

MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron. The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.

7128889, Oct 31, 2006

May 13, 2004

10/845867

John A. Carlisle - Plainfield IL, US
Orlando Auciello - Bolingbrook IL, US
James Birrell - Chicago IL, US

C01B 31/06

423446, 117101

An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0. 35 and less than 0. 85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

7556982, Jul 7, 2009

Jul 15, 2004

10/892736

John A. Carlisle - Plainfield IL, US
Dieter M. Gruen - Downers Grove IL, US
Orlando Auciello - Bolingbrook IL, US
Xingcheng Xiao - Woodridge IL, US

UChicago Argonne, LLC - Chicago IL

H01L 21/00

438105

A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0. 2 microns/hour at a substrate temperature less than about 500 C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10sites/cm, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500 C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0. 2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500 C.

7602105, Oct 13, 2009

Apr 24, 2007

11/789344

Orlando H. Auciello - Bolingbrook IL, US

UChicago Argonne, LLC - Argonne IL

H01L 41/08

310324, 310311, 310328, 310365

A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips. This integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure can be efficiently used to imprint data in the ferroelectric layer for memory storage with high density in the gigabit (Gb) to terabit (Tb) range. An alternative memory media to the ferroelectric layer can be a phase change material that exhibits two orders of magnitude difference in electrical resistance between amorphous and crystalline phases.

7714405, May 11, 2010

Mar 3, 2005

11/073263

Orlando Auciello - Bolingbrook IL, US

UChicago Argonne, LLC - Chicago IL

H01L 39/14

257499

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.