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Norimasa Yoshimizu Phones & Addresses

  • Falls Church, VA
  • San Diego, CA
  • 100 Devon Ave APT 15, Pleasant Hill, CA 94523
  • New Haven, CT
  • Ithaca, NY
  • Claremont, CA

Business Records

Name / Title
Company / Classification
Phones & Addresses
Norimasa Yoshimizu
CEO, President, Chief Executive Officer, Chief Financial Officer
NANOMASON INC
Commercial Physical Research
837 Arnold Dr #310, Martinez, CA 94553
7 Corporate Dr #107, North Haven, CT 06473
PO Box 23122, Concord, CA 94523
100 Devon Ave, Concord, CA 94523
(607) 216-8263, (607) 216-9263

Publications

Us Patents

Optical Grid For High Precision And High Resolution Method Of Wafer-Scale Nanofabrication

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US Patent:
8456650, Jun 4, 2013
Filed:
Sep 9, 2009
Appl. No.:
13/062832
Inventors:
Amit Lal - Ithaca NY, US
Norimasa Yoshimizu - Ithaca NY, US
Assignee:
Cornell University - Ithaca NY
International Classification:
G01B 11/14
US Classification:
356622
Abstract:
A wafer-scale nano-metrology system () for sensing position of a nanofabrication element () when illuminated by a patterned optical projection defining a grid or position measuring gauge includes a frequency stabilized laser emitter () configured to generate a laser emission at a selected frequency, where the laser emission forms a diverging beam configured to illuminate a selected area occupied by a target fabrication object () having a proximal surface. An optical pattern generator () is illuminated by laser () and generates a patterned optical projection grid or gauge for projection upon the target fabrication object (). A movable tool or nanofabrication element () carries an optical sensor array (), and the sensor array detect at least a portion of the optical projection grid, and, in response to that detection, generates grid position data for use in controlling the position of the tool ().

Relay-Connected Semiconductor Transistors

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US Patent:
20070041142, Feb 22, 2007
Filed:
Jul 13, 2006
Appl. No.:
11/485459
Inventors:
Amit Lal - Ithaca NY, US
Shankar Radhakrishnan - Ithaca NY, US
Norimasa Yoshimizu - Ithaca NY, US
International Classification:
H01H 47/00
US Classification:
361207000
Abstract:
A solid-state semiconductor device operable without loss arising from junction-to junction (e.g., source-to-drain) leakage current includes a movable MEMS switch or relay armature structure carrying at least one electrical contact corresponding to a semiconductor device junction. The switch or relay armature is movable from a first position corresponding to a first switch state to a second position corresponding to a second switch state. The semiconductor device also includes an actuation circuit configured to act on the cantilever switch, changing the switch from a first contact-conducting state to a second non-contact-conducting state by physically separating the switch's electrical contact from the semiconductor device junction, thus eliminating the conductive path for leakage current losses.

Methods, Devices, And Systems For Measuring Physical Properties Of Fluid

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US Patent:
20130192349, Aug 1, 2013
Filed:
Jan 15, 2013
Appl. No.:
13/742244
Inventors:
Abhishek Ramkumar - Mountain View CA, US
Norimasa Yoshimizu - Pleasant Hill CA, US
International Classification:
G01N 11/16
G01N 29/02
US Classification:
73 5441, 73 6179
Abstract:
Disclosed herein are devices for measuring, at one or more time points, one or more properties or changes in properties of a fluid sample. The devices may comprise a chamber defining an internal volume of the device suitable for receiving and retaining the fluid sample; a plurality of layers, the plurality comprising at least a first layer below the chamber, at least a second layer above the chamber, and a substrate layer between the first and second layers, wherein: the substrate layer is linked to at least one suspended element located within the chamber; the suspended element is linked to the substrate layer by at least two compliant structures located within the chamber; and the suspended element is configured to oscillate upon application of an actuating signal to at least one electrically conductive path, which runs across at least two of the compliant structures and the suspended element. Related methods and uses are also disclosed.

Methods, Devices, And Systems For Measuring Physical Properties Of Fluid

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US Patent:
20180259437, Sep 13, 2018
Filed:
Jan 17, 2018
Appl. No.:
15/873275
Inventors:
- Pleasant Hill CA, US
Norimasa Yoshimizu - Pleasant Hill CA, US
International Classification:
G01N 11/16
G01N 29/036
G01N 29/02
G01N 33/487
G01N 33/49
Abstract:
Disclosed herein are devices for measuring, at one or more time points, one or more properties or changes in properties of a fluid sample. The devices may comprise a chamber defining an internal volume of the device suitable for receiving and retaining the fluid sample; a plurality of layers, the plurality comprising at least a first layer below the chamber, at least a second layer above the chamber, and a substrate layer between the first and second layers, wherein: the substrate layer is linked to at least one suspended element located within the chamber; the suspended element is linked to the substrate layer by at least two compliant structures located within the chamber; and the suspended element is configured to oscillate upon application of an actuating signal to at least one electrically conductive path, which runs across at least two of the compliant structures and the suspended element. Related methods and uses are also disclosed.

Methods, Devices, And Systems For Measuring Physical Properties Of Fluid

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US Patent:
20170059464, Mar 2, 2017
Filed:
Nov 4, 2016
Appl. No.:
15/343841
Inventors:
- Pleasant Hill CA, US
Norimasa Yoshimizu - Pleasant Hill CA, US
International Classification:
G01N 11/16
G01N 33/49
G01N 29/036
Abstract:
Disclosed herein are devices for measuring, at one or more time points, one or more properties or changes in properties of a fluid sample. The devices may comprise a chamber defining an internal volume of the device suitable for receiving and retaining the fluid sample; a plurality of layers, the plurality comprising at least a first layer below the chamber, at least a second layer above the chamber, and a substrate layer between the first and second layers, wherein: the substrate layer is linked to at least one suspended element located within the chamber; the suspended element is linked to the substrate layer by at least two compliant structures located within the chamber; and the suspended element is configured to oscillate upon application of an actuating signal to at least one electrically conductive path, which runs across at least two of the compliant structures and the suspended element. Related methods and uses are also disclosed.
Norimasa Yoshimizu from Falls Church, VA, age ~43 Get Report