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Niyaz N Khusnatdinov

from Round Rock, TX
Age ~63
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Also known as:
Niyaz Acworth
Phone and address:
3257 Ranch Park Trl, Round Rock, TX 78681
(512) 388-4922
Related to:
Elina Khusnatdinov, 23
Connected to:
Vanna Khut, 65Saul I Khutaina, 68Nataliya Khutorna, 51Tanya Khutorsky, 52George Khutoryansky, 51Seema Khutti, 45Alexander T Khuu, 54Anh P Khuu, 56Coi Khuu, 63Dee Khuu, 72

Niyaz Khusnatdinov Phones & Addresses

  • 3257 Ranch Park Trl, Round Rock, TX 78681 (512) 388-4922
  • 2801 Wells Branch Pkwy, Austin, TX 78728 (512) 388-4922
  • 11 Davis Rd, Acton, MA 01720 (978) 635-1621
  • 11 Davis Rd #B7, Acton, MA 01720 (978) 635-1621
  • 23 Davis Rd, Acton, MA 01720 (978) 635-1621
  • Adams, MA
  • Boston, MA
  • Cambridge, MA
  • Norwich, VT
  • Hanover, NH

Resumes

Resumes

Niyaz Khusnatdinov Photo 1

Niyaz Khusnatdinov

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Location:
Austin, Texas Area
Industry:
Nanotechnology
Niyaz Khusnatdinov Photo 2

Niyaz Khusnatdinov

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Niyaz Khusnatdinov
Secretary
MIMETEX INC
Eating Place
300 Summer St #72, Boston, MA 02210
2801 Wl Br Pkwy APT 1738, Austin, TX 78728

Publications

Us Patents

Microtextured Antireflective Surfaces With Reduced Diffraction Intensity

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US Patent:
7252869, Aug 7, 2007
Filed:
Nov 1, 2004
Appl. No.:
10/979603
Inventors:
Niyaz Khusnatdinov - Round Rock TX, US
Tanwin Chang - Boston MA, US
International Classification:
B32B 3/30
G02B 5/18
G02B 1/11
US Classification:
428141, 428913, 428220, 428333, 359601, 359575
Abstract:
A microstructured antireflective texture is disclosed comprised of an engineered array of protuberances arranged on a non-periodic lattice. The average distance between said protuberances is in the subwavelength regime of the waveband for which the antireflective effect is desired. The non-periodic arrangement of protuberances acts to suppress blue-green backscattered light that is commonly seen diffracting from antireflective textures that use strictly periodic lattice arrangements. Embodiments of the invention include the randomized square pattern, and the quasicrystal pattern.

Single Phase Fluid Imprint Lithography Method

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US Patent:
8211214, Jul 3, 2012
Filed:
Feb 5, 2008
Appl. No.:
12/026022
Inventors:
Frank Y. Xu - Round Rock TX, US
Niyaz Khusnatdinov - Round Rock TX, US
Assignee:
Molecular Imprints, Inc. - Austin TX
Board of Regents, The University of Texas - Austin TX
International Classification:
B01D 19/00
US Classification:
95246, 95241, 427258, 264 85, 264102, 216 9, 216 52
Abstract:
The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to either the viscous liquid, the substrate, the template, or a combination thereof. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.

Extrusion Reduction In Imprint Lithography

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US Patent:
8361371, Jan 29, 2013
Filed:
Feb 6, 2009
Appl. No.:
12/367079
Inventors:
Niyaz Khusnatdinov - Round Rock TX, US
Christopher Ellis Jones - Austin TX, US
Joseph G. Perez - Austin TX, US
Dwayne L. LaBrake - Cedar Park TX, US
Ian Matthew McMackin - Austin TX, US
Assignee:
Molecular Imprints, Inc. - Austin TX
International Classification:
B28B 1/14
B27N 3/18
B29C 35/08
US Classification:
264319, 264293, 264299, 264330, 264494, 264496, 977887
Abstract:
Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified.

Fluid Dispense Device Calibration

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US Patent:
8480933, Jul 9, 2013
Filed:
Oct 20, 2009
Appl. No.:
12/582041
Inventors:
Van Nguyen Truskett - Austin TX, US
Stephen C. Johnson - Austin TX, US
Niyaz Khusnatdinov - Round Rock TX, US
Logan Simpson - Coupland TX, US
Assignee:
Molecular Imprints, Inc. - Austin TX
International Classification:
B29C 45/76
US Classification:
264 401
Abstract:
Systems and methods for calibrating a dispense head to provide substantially uniform droplets on a substrate are described.

Critical Dimension Control During Template Formation

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US Patent:
8545709, Oct 1, 2013
Filed:
Apr 6, 2012
Appl. No.:
13/441500
Inventors:
Cynthia B. Brooks - Austin TX, US
Dwayne L. LaBrake - Cedar Park TX, US
Niyaz Khusnatdinov - Round Rock TX, US
Michael N. Miller - Austin TX, US
Sidlgata V. Sreenivasan - Austin TX, US
David James Lentz - Leander TX, US
Frank Y. Xu - Round Rock TX, US
Assignee:
Molecular Imprints, Inc. - Austin TX
International Classification:
C03C 15/00
US Classification:
216 41, 216 54, 264319
Abstract:
Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.

Extrusion Reduction In Imprint Lithography

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US Patent:
8641958, Feb 4, 2014
Filed:
Jan 17, 2013
Appl. No.:
13/743772
Inventors:
Niyaz Khusnatdinov - Round Rock TX, US
Christopher Ellis Jones - Austin TX, US
Joseph G. Perez - Gilbert AZ, US
Dwayne L. LaBrake - Cedar Park TX, US
Ian Matthew McMackin - Austin TX, US
Assignee:
Molecular Imprints, Inc. - Austin TX
International Classification:
B28B 1/14
B27N 3/18
B29C 35/08
A01J 21/00
US Classification:
264319, 264293, 264299, 264330, 264494, 264496, 977887
Abstract:
Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified.

Residual Layer Thickness Measurement And Correction

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US Patent:
8647554, Feb 11, 2014
Filed:
Jul 13, 2010
Appl. No.:
12/835009
Inventors:
Christopher Ellis Jones - Austin TX, US
Niyaz Khusnatdinov - Round Rock TX, US
Stephen C. Johnson - Austin TX, US
Philip D. Schumaker - Austin TX, US
Pankaj B. Lad - DeSoto TX, US
Assignee:
Molecular Imprints, Inc. - Austin TX
International Classification:
B27N 3/18
US Classification:
264319, 700110
Abstract:
In nano-imprint lithography it is important to detect thickness non-uniformity of a residual layer formed on a substrate. Such non-uniformity is compensated such that a uniform residual layer may be formed. Compensation is performed by calculating a corrected fluid drop pattern.

Residual Layer Thickness Measurement And Correction

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US Patent:
20070228593, Oct 4, 2007
Filed:
Mar 30, 2007
Appl. No.:
11/694017
Inventors:
Christopher Jones - Austin TX, US
Niyaz Khusnatdinov - Round Rock TX, US
Stephen Johnson - Austin TX, US
Philip Schumaker - Austin TX, US
Pankaj Lad - DeSoto TX, US
Assignee:
MOLECULAR IMPRINTS, INC. - Austin TX
International Classification:
B29C 43/02
US Classification:
264040400, 264319000, 425385000, 425375000, 425141000
Abstract:
In nano-imprint lithography it is important to detect thickness non-uniformity of a residual layer formed on a substrate. Such non-uniformity is compensated such that a uniform residual layer may be formed. Compensation is performed by calculating a corrected fluid drop pattern.
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Niyaz N Khusnatdinov from Round Rock, TX, age ~63 Get Report