Nitin Kumar

7680117, Mar 16, 2010

Mar 30, 2007

11/694738

Nitin Kumar - Fremont CA, US
Fritz Budiyanto - Sunnyvale CA, US

Juniper Networks, Inc. - Sunnyvale CA

H04L 12/28
H04L 12/56

370392

A method may include receiving a packet associated with a flow of packets, the packet including a destination address; selecting one of a plurality of memory banks, the selected memory bank being associated with the flow of packets, wherein each of the plurality of memory banks stores the same next-hop information for forwarding the packet to the destination address; accessing, in the selected memory bank, the next-hop information for forwarding the packet to the destination address; and forwarding the packet to the destination address based on the next-hop information.

7704789, Apr 27, 2010

Feb 5, 2007

11/702967

Nitin Kumar - Menlo Park CA, US
Jinhong Tong - Santa Clara CA, US
Chi-I Lang - Sunnyvale CA, US
Tony Chiang - Campbell CA, US

Intermolecular, Inc. - San Jose CA

H01L 21/00

438104, 438171, 438678, 257 4

Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

7785172, Aug 31, 2010

Aug 14, 2007

11/838653

Peter Satitpunwaycha - Sunnyvale CA, US
Richard Endo - San Carlos CA, US
Zachary Fresco - Santa Clara CA, US
Nitin Kumar - Menlo Park CA, US

Intermolecular, Inc. - San Jose CA

B24B 49/00
B24B 1/00

451 8, 451 51, 451287, 451291

Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

7972897, Jul 5, 2011

Feb 5, 2007

11/702966

Nitin Kumar - Menlo Park CA, US
Chi-I Lang - Sunnyvale CA, US
Tony Chiang - Campbell CA, US
Jinhong Tong - Santa Clara CA, US

Intermolecular, Inc. - San Jose CA

H01L 21/00

438104, 438171, 438678

Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

8014317, Sep 6, 2011

Aug 21, 2008

12/195686

Kaushik Ghosh - Sunnyvale CA, US
Kireeti Kompella - Los Altos CA, US
Siva Gaggara - Sunnyvale CA, US
Nitin Kumar - Fremont CA, US
Steven Lin - Cupertino CA, US

Juniper Networks, Inc. - Sunnyvale CA

H04L 12/28
H04L 12/56
G06F 15/173

370254, 370392, 37039531, 709242

A route for a data unit through a network may be defined based on a number of next hops. Exemplary embodiments described herein may implement a router forwarding table as a chained list of references to next hops. In one implementation, a device includes a forwarding table that includes: a first table configured to store, for each of a plurality of routes for data units in a network, a chain of links to next hops for the routes; and a second table configured to store the next hops. The device also includes a forwarding engine configured to assemble the next hops for the data units based on using the chain of links in the first table to retrieve the next hops in the second table and to forward the data units in the network based on the assembled next hops.

8077726, Dec 13, 2011

Feb 24, 2009

12/391859

Nitin Kumar - Fremont CA, US
Alex Baban - San Jose CA, US

Juniper Networks, Inc. - Sunnyvale CA

H04L 12/56

37039531, 370401

Techniques are described for maintaining a forwarding information base (FIB) within a packet-forwarding engine (PFE) of a router, and programming a packet-forwarding integrated circuit (IC) with a hardware version of the FIB. Entries of the hardware version identify primary forwarding next hops and backup forwarding next hops for the LSPs, wherein the packet-forwarding IC includes a control logic module and internal selector block configured to produce a value indicating a state of the first physical link. The selector block outputs one of the primary forwarding next hop and the backup forwarding next hop of the entries for forwarding the MPLS packets based on the value in response to the packet-processing engine addressing one of the entries of the FIB for the LSPs. Packets are forwarded with the PFE to the one of the primary forwarding next hop and the backup forwarding next hop output by the selector block.

8097878, Jan 17, 2012

Mar 5, 2007

11/714326

Nitin Kumar - Menlo Park CA, US
Jinhong Tong - Santa Clara CA, US
Chi-I Lang - Sunnyvale CA, US
Tony Chiang - Campbell CA, US
Prashant B. Phatak - San Jose CA, US

Intermolecular, Inc. - San Jose CA

H01L 29/12
H01L 29/02

257 43, 257 2, 257 4, 257E29002, 257E29068

Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

8254270, Aug 28, 2012

Jan 7, 2010

12/683656

Nitin Kumar - Fremont CA, US
Alex Baban - San Jose CA, US
Alok Khambatkone - Santa Clara CA, US

Juniper Networks, Inc. - Sunnyvale CA

H04L 12/28
H04J 14/00
H04B 10/08

370241, 370392, 370401, 398 1

A network device provides a selector list that includes indices of child nexthops associated with the network device, where each of the child nexthops is associated with a corresponding child link provided in an aggregated bundle of child links. The network device also receives an indication of a failure of a child link in the aggregated bundle of child links, and removes, from the selector list, an index of a child nexthop associated with the failed child link. The network device further receives probabilities associated with the child links of the aggregated bundle of child links. Each of the probabilities indicates a probability of a packet exiting the network device on a child link. The network device also creates a distribution table based on the probabilities associated with the child links, and rearranges values provided in the distribution table.