Ningli Liu

20140008350, Jan 9, 2014

Jun 29, 2013

13/931863

Paul Becker - San Carlos CA, US
Fuhua Ling - Milpitas CA, US
Ningli Liu - Cupertino CA, US
Lawrence Joseph White - Newark CA, US
Louis Peter Martin, II - San Ramon CA, US
Scott Murray Finlayson - Belleville, CA
James Francis Beres - San Mateo CA, US
Marcus Kleinehanding - Brussels, BE

PENTAIR THERMAL MANAGEMENT LLC - Menlo Park CA

H05B 3/02

219553, 29611

A mineral insulated heating cable for a heat tracing system. The heating cable includes a sheath having at least a first, and optionally a second layer, wherein the thermal conductivity of the second layer is greater than a thermal conductivity of the first layer. In addition, the first and second layers are in intimate thermal contact. The heating cable also includes a least one heating conductor for generating heat and a dielectric layer located within the sheath for electrically insulating the heating, conductor, wherein the sheath, heating conductor and dielectric layer form a heating section. In addition, the heating cable includes a conduit for receiving the heating section. Further, the heating cable includes a cold lead section and a hot-cold joint for connecting the heating and cold lead sections. In addition, a high emissivity coating may be formed on the first layer.

20190021138, Jan 17, 2019

Sep 11, 2018

16/128344

- Schaffhausen, CH
Fuhua Ling - Milpitas CA, US
Ningli Liu - Cupertino CA, US
Lawrence Joseph White - Newark CA, US
Louis Peter Martin, II - San Ramon CA, US
Scott Murray Finlayson - Belleville, CA
James Francis Beres - Incline Village NV, US
Marcus Kleinehanding - Brussels, BE

H05B 3/02
H05B 3/56
H05B 3/08
H05B 3/50

A mineral insulated heating cable for a heat tracing system. The heating cable includes a sheath having at least a first, and optionally a second layer, wherein the thermal conductivity of the second layer is greater than a thermal conductivity of the first layer. In addition, the first and second layers are in intimate thermal contact. The heating cable also includes at least one heating conductor for generating heat and a dielectric layer located within the sheath for electrically insulating the heating conductor, wherein the sheath, heating conductor and dielectric layer form a heating section. In addition, the heating cable includes a conduit for receiving the heating section. Further, the heating cable includes a cold lead section and a hot-cold joint for connecting the heating and cold lead sections. In addition, a high emissivity coating may be formed on the first layer.

20180080125, Mar 22, 2018

Nov 27, 2017

15/822551

- Santa Clara CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Yihong CHEN - San Jose CA, US
Abhijit Basu MALLICK - Fremont CA, US
Oscar LOPEZ - San Jose CA, US
Ningli LIU - Sunnyvale CA, US

C23C 16/455
H01J 37/32
C23C 16/458
C23C 16/509

Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

20170278682, Sep 28, 2017

Mar 20, 2017

15/463020

- Santa Clara CA, US
Jianhua ZHOU - Campbell CA, US
Ningli LIU - Cupertino CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US

H01J 37/32
C23C 16/46
C30B 23/06
C30B 25/12
C30B 25/10
C23C 14/50
C23C 16/458

Embodiments of the present disclosure generally relate to a substrate support assembly in a semiconductor processing chamber. The semiconductor processing chamber may be a PECVD chamber including a substrate support assembly having a substrate support and a stem coupled to the substrate support. An RF electrode is embedded in the substrate support and a rod is coupled to the RF electrode. The rod is made of titanium (Ti) or of nickel (Ni) coated with gold (Au), silver (Ag), aluminum (Al), or copper (Cu). The rod made of Ti or of Ni coated with Au, Ag, Al or Cu has a reduced electrical resistivity and increased skin depth, which minimizes heat generation as RF current travels through the rod.

20150376788, Dec 31, 2015

Aug 26, 2014

14/468665

- Santa Clara CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Yihong CHEN - San Jose CA, US
Abhijit Basu MALLICK - Fremont CA, US
Oscar LOPEZ - San Jose CA, US
Ningli LIU - Cupertino CA, US

C23C 16/455
C23C 16/40
C23C 16/46
C23C 16/458
C23C 16/505

Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

20150221480, Aug 6, 2015

Jan 21, 2015

14/601274

- Santa Clara CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Jianhua ZHOU - Campbell CA, US
Ningli LIU - Cupertino CA, US
Yihong CHEN - San Jose CA, US
Abhijit Basu MALLICK - Fremont CA, US
Sudhir R. GONDHALEKAR - Pleasanton CA, US

H01J 37/32
C09D 1/00

In one embodiment, a processing chamber is disclosed wherein at least one surface of the processing chamber has a coating comprising SiYMgAlO, wherein v ranges from about 0.0196 to 0.2951, w ranges from about 0.0131 to 0.1569, x ranges from about 0.0164 to 0.0784, y ranges from about 0.0197 to 0.1569, z ranges from about 0.5882 to 0.6557, and v+w+x+y+z=1.

20150167160, Jun 18, 2015

May 5, 2014

14/270216

- Santa Clara CA, US
Shaunak MUKHERJEE - Santa Clara CA, US
Amit CHATTERJEE - Cupertino CA, US
Pramit MANNA - Santa Clara CA, US
Abhijit Basu MALLICK - Fremont CA, US
Ningli LIU - Cupertino CA, US
Jianhua ZHOU - Campbell CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Mukund SRINIVASAN - Fremont CA, US

C23C 16/452

One or more precursor gases, such as one or more silicon-containing gases, which may be one or more organosilicon and/or tetraalkyl orthosilicate gases, are introduced into a processing chamber and exposed to radicals. Dielectric films deposited using the techniques disclosed herein may contain silicon. The deposited films may exhibit few defects, low shrinkage, and high etch selectivity, mechanical stability, and thermal stability. The deposition conditions can be very mild, so damage to the substrate and the as-deposited films from UV radiation and ion bombardment is minimal or nonexistent.