Search

Navneet Masaun Phones & Addresses

  • 239 Amethyst Way, Franklin Park, NJ 08823
  • Hillsborough, NJ
  • 5603 Oaks Blvd, North Brunswick, NJ 08902 (732) 247-3880
  • Kendall Park, NJ
  • Somerset, NJ
  • N Brunswick, NJ

Work

Company: Utc aerospace systems Aug 1, 2016 Position: Manager of manufacturing engineering

Education

Degree: Master of Business Administration, Masters School / High School: Rutgers Business School 2015 to 2017 Specialities: Finance

Skills

Semiconductors • Engineering Management • Design of Experiments • R&D • Continuous Improvement • Process Engineering • Manufacturing • Six Sigma • Lean Manufacturing • Product Development • Program Management • Spc • Testing • Engineering • Process Simulation • Systems Engineering • Research and Development • Metrology • Cross Functional Team Leadership • Root Cause Analysis • Electronics • Failure Analysis • Product Management • Team Leadership • Project Management • Management • Leadership • Process Improvement

Industries

Aviation & Aerospace

Resumes

Resumes

Navneet Masaun Photo 1

Manager Of Manufacturing Engineering

View page
Location:
239 Amethyst Way, Franklin Park, NJ 08823
Industry:
Aviation & Aerospace
Work:
Utc Aerospace Systems
Manager of Manufacturing Engineering

Utc Aerospace Systems Jul 2012 - Jul 2016
Program Manager

Utc Aerospace Systems Dec 2014 - Jul 2016
Manager of Programs

Goodrich Oct 2005 - Jul 2012
Technical Program Manager

Sensors Unlimited Nov 2001 - Oct 2005
Epitaxial Growth Engineer
Education:
Rutgers Business School 2015 - 2017
Master of Business Administration, Masters, Finance
Rutgers University Sep 1992 - May 1996
Bachelors, Bachelor of Science, Chemical Engineering
Skills:
Semiconductors
Engineering Management
Design of Experiments
R&D
Continuous Improvement
Process Engineering
Manufacturing
Six Sigma
Lean Manufacturing
Product Development
Program Management
Spc
Testing
Engineering
Process Simulation
Systems Engineering
Research and Development
Metrology
Cross Functional Team Leadership
Root Cause Analysis
Electronics
Failure Analysis
Product Management
Team Leadership
Project Management
Management
Leadership
Process Improvement

Publications

Us Patents

Low Noise Hybridized Detector Using Charge Transfer

View page
US Patent:
20160035783, Feb 4, 2016
Filed:
Jul 6, 2015
Appl. No.:
14/792065
Inventors:
- Princeton NJ, US
Navneet Masaun - Franklin Park NJ, US
International Classification:
H01L 27/146
H01L 31/0304
H01L 29/205
H01L 29/45
H01L 29/49
H01L 31/109
H01L 31/18
Abstract:
A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.
Navneet G Masaun from Franklin Park, NJ, age ~49 Get Report