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Moungi G Bawendi

from Cambridge, MA
Age ~64

Moungi Bawendi Phones & Addresses

  • 17 Lowell St, Cambridge, MA 02138 (617) 497-0458 (617) 497-0853
  • Watertown, MA
  • 285 Beacon St, Boston, MA 02116 (617) 375-6011
  • 263 Commonwealth Ave, Boston, MA 02116 (617) 375-6011
  • Somerville, MA
  • Lowell, MA
  • Hillsborough, NJ
  • 17 Lowell St, Cambridge, MA 02138 (617) 497-0458

Work

Company: Massachusetts institute of technology (mit) Position: Keck professor of chemistry

Education

Degree: Graduate or professional degree

Skills

Nanotechnology • Materials Science • Physics • Nanomaterials • Science • Chemistry • Spectroscopy • Characterization • Optics • Matlab • Mathematical Modeling • Statistics • Molecular Biology

Industries

Higher Education

Resumes

Resumes

Moungi Bawendi Photo 1

Keck Professor Of Chemistry

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Location:
77 Massachusetts Ave, Cambridge, MA 02139
Industry:
Higher Education
Work:
Massachusetts Institute of Technology (Mit)
Keck Professor of Chemistry
Skills:
Nanotechnology
Materials Science
Physics
Nanomaterials
Science
Chemistry
Spectroscopy
Characterization
Optics
Matlab
Mathematical Modeling
Statistics
Molecular Biology

Business Records

Name / Title
Company / Classification
Phones & Addresses
Moungi Bawendi
Director
LUMICELL, INC
Mfg Electromedical Equipment
80 William St SUITE 260, Wellesley Hills, MA 02481
1000 Winter St, Waltham, MA 02451
Waltham, MA 02451
(617) 571-0592

Publications

Isbn (Books And Publications)

Physical Chemistry

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Author

Moungi G. Bawendi

ISBN #

0471658022

Us Patents

Water-Soluble Thiol-Capped Nanocrystals

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US Patent:
6426513, Jul 30, 2002
Filed:
Sep 18, 1998
Appl. No.:
09/156457
Inventors:
Moungi G. Bawendi - Boston MA
Frederick V. Mikulec - Somerville MA
Jin-Kyu Lee - Seoul, KR
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 3100
US Classification:
257 13, 257 17
Abstract:
A water soluble semiconductor nanocrystal capable of light emission is provided, including a quantum dot having a selected band gap energy, a layer overcoating the quantum dot, the overcoating layer comprised of a material having a band gap energy greater than that of the quantum dot, and an organic outer layer, the organic layer comprising a compound having the formula, SH(CH ) X, where X is carboxylate or sulfonate. The particle size of the nanocrystal core is in the range of about 12 to about 150 , with a deviation of less than 10% in the core. The coated nanocrystal exhibits photoluminescence having quantum yields of greater than 10% in wate.

Water-Soluble Fluorescent Nanocrystals

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US Patent:
6444143, Sep 3, 2002
Filed:
May 29, 2001
Appl. No.:
09/865513
Inventors:
Moungi G. Bawendi - Boston MA
Frederick V. Mikulec - Somerville MA
Jin-Kyu Lee - Seoul, KR
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
C09K 1100
US Classification:
2523016S, 2523016 R, 2523014 R, 2523014 S, 428690, 428403, 428407
Abstract:
A water soluble semiconductor nanocrystal capable of light emission is provided, including a quantum dot having a selected band gap energy, a layer overcoating the quantum dot, the overcoating layer comprised of a material having a band gap energy greater than that of the quantum dot, and an organic outer layer, the organic layer comprising a compound having a least one linking group for attachment of the compound to the overcoating layer and at least one hydrophilic group space apart from the linking group by a hydrophobic region sufficient to prevent electron charge transfer across the hydrophobic region. The particle size of the nanocrystal core is in the range of about 12 to about 150 , with a deviation of less than 10% in the core. The coated nanocrystal exhibits photoluminescende having quantum yield of greater than 10% in water.

Quantum Dot White And Colored Light Emitting Diodes

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US Patent:
6501091, Dec 31, 2002
Filed:
Oct 7, 1998
Appl. No.:
09/167795
Inventors:
Moungi G. Bawendi - Boston MA
Jason Heine - Lincoln MA
Klavs F. Jensen - Lincoln MA
Jeffrey N. Miller - Los Altos Hills CA
Ronald L. Moon - Atherton CA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
Hewlett-Packard Company - Palo Alto CA
International Classification:
H01L 2906
US Classification:
257 14, 257 89, 257 98, 257100
Abstract:
An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum dots is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the dots themselves, or of a mixture of light emitted from the dots and light emitted from the primary source. The dots desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.

Preparation Of Nanocrystallites

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US Patent:
6576291, Jun 10, 2003
Filed:
Dec 8, 2000
Appl. No.:
09/732013
Inventors:
Moungi Bawendi - Boston MA
Nathan E. Stott - Cambridge MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
B22F 102
US Classification:
427215, 75 1062, 75343, 75362, 75370, 427314, 516 33, 516922
Abstract:
A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.

Semiconductor Nanocrystals For Inventory Control

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US Patent:
6602671, Aug 5, 2003
Filed:
Sep 17, 1999
Appl. No.:
09/397432
Inventors:
Moungi G. Bawendi - Boston MA
Klavs F. Jensen - Lexington MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 2904
US Classification:
435 71, 435DIG 41, 435DIG 48, 435DIG 22, 435DIG 29, 257 64, 257200, 257642, 365103, 365114
Abstract:
A novel encoding system, compositions for use therein and methods for determining the source, location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a collection of one or more sizes of populations of semiconductor nanocrystals having characteristic spectral emissions, to âtrackâ the source or location of an item of interest or to identify a particular item of interest. The semiconductor nanocrystals used in the inventive compositions can be selected to emit a desired wavelength to produce a characteristic spectral emission in narrow spectral widths, and with a symmetric, nearly Gaussian line shape, by changing the composition and size of the semiconductor nanocrystal. Additionally, the intensity of the emission at a particular characteristic wavelength can also be varied, thus enabling the use of binary or higher order encoding schemes.

Tellurium-Containing Nanocrystalline Materials

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US Patent:
6607829, Aug 19, 2003
Filed:
Jul 26, 2000
Appl. No.:
09/625861
Inventors:
Moungi G. Bawendi - Boston MA
Frederic V. Mikulec - San Diego CA
Sungjee Kim - Cambridge MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
B32B 516
US Classification:
428403, 428570, 428686, 438 63, 438 93, 438 97
Abstract:
Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.

Inventory Control

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US Patent:
6617583, Sep 9, 2003
Filed:
Sep 24, 1998
Appl. No.:
09/160458
Inventors:
Moungi G. Bawendi - Boston MA
Klavs F. Jensen - Lincoln MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G01J 124
US Classification:
25037001, 23546201, 435DIG 31, 435DIG 33, 420513, 420525, 420528, 420555, 420556, 420903
Abstract:
A novel encoding system and methods for determining the location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a âbarcodeâ comprising one or more sizes of semiconductor nanocrystals (quantum dots) having characteristic spectral emissions, to either âtrackâ the location of a particular item of interest or to identify a particular item of interest. The semiconductor nanocrystals used in the inventive âbarcodingâ scheme can be tuned to a desired wavelength to produce a characteristic spectral emission in narrow spectral widths, and with a symmetric, nearly Gaussian line shape, by changing the composition and size of the quantum dot. Additionally, the intensity of the emission at a particular characteristic wavelength can also be varied, thus enabling the use of binary or higher order encoding schemes. The information encoded by the quantum dot can be spectroscopically decoded, thus providing the location and/or identity of the particular item or component of interest.

Polarization Label For Measuring 3-Dimensional Orientation

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US Patent:
6696299, Feb 24, 2004
Filed:
May 11, 1999
Appl. No.:
09/310009
Inventors:
Stephen Empedocles - Palo Alto CA
Moungi Bawendi - Boston MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G01N 3700
US Classification:
436 56, 436172, 436164, 422 8205, 422 8208
Abstract:
A photoactive moiety exhibiting an anisotropic transition dipole. The moiety exhibits emission of polarized light in response to energy absorption. In a preferred embodiment, the moiety comprises a particle from the group consisting of a crystalline arrangement of photoactive molecules and a photoactive nanocrystal. The moiety may include a matrix in which photoactive objects exhibiting an anisotropic emission dipole are embedded. The moiety may be photobleached to product the anisotropy and the photoactive objects may have a one dimensional transition dipole in their natural state.

Wikipedia References

Moungi Bawendi Photo 2

Moungi Bawendi

Moungi G Bawendi from Cambridge, MA, age ~64 Get Report