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Mohsen J Banan

from Wildwood, MO
Age ~64
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Also known as:
Mohsen M Banan, Mohsen Ranan, Moshen Banan, Mohsen Canan
Phone and address:
539 Roaring Fork Dr, Wildwood, MO 63040
(636) 458-5968
Related to:
Lily BananChristine E Banan, 60Erin E Marshall, 39John B Marshall, 65
Connected to:
Mark T Banan, 38Maryam Banan, 75Lili I Banani, 79Jacquieline L Bananto, 68Elmer B Banares, 73Valerie S Banarsee, 63Adam M Banas, 36Amelia A Banas, 43Amy R Banas, 35Anthony Banas, 47

Mohsen Banan Phones & Addresses

  • 539 Roaring Fork Dr, Grover, MO 63040 (636) 458-5968
  • 16406 Bayshore Cove Ct, Grover, MO 63040 (636) 458-5968
  • Wildwood, MO
  • Saint Louis, MO
  • Saint Charles, MO
  • Maricopa, AZ
  • Scottsdale, AZ
  • 539 Roaring Fork Dr, Grover, MO 63040 (314) 606-1203

Work

Position: Building and Grounds Cleaning and Maintenance Occupations

Education

Degree: Bachelor's degree or higher

Emails

m***[email protected]

Resumes

Resumes

Mohsen Banan Photo 1

President, Neda Communications, Inc (Consultant)

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Mohsen Banan Photo 2

Director Of Process And Product Engineer

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Location:
Grover, MO
Industry:
Semiconductors
Work:
Memc Electronic Materials 2003 - Jan 1, 2010
Director - Process and Product Engineering
Memc 2003 - Jan 1, 2010
Director of Process and Product Engineer
Education:
Clarkson University 1987 - 1991
Clarkson University
Doctorates, Doctor of Philosophy, Chemical Engineering
Skills:
Silicon
Semiconductors
Solar
Solar Energy
Product Engineering
Design of Experiments
Failure Analysis
Semiconductor Industry
Spc
Thin Films
Metrology
Cross Functional Team Leadership
Crystal Growth
Cvd
Engineering Management
Lean Manufacturing
Materials
Manufacturing Engineering
Manufacturing
Process Engineering
Pvd
Process Simulation
Photovoltaics
Statistical Process Control
Six Sigma
Product Development
Quality Assurance
Quality Control
R&D
Semiconductor Fabrication
Yield
Mohsen Banan Photo 3

Director, Corp. Suppliers Quality At Sunedison (Former Memc Electronic Materials)

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Position:
Director, Corp. Suppliers Quality at SunEdison (former MEMC Electronic Materials)
Location:
Grover, Missouri
Industry:
Semiconductors
Work:
SunEdison (former MEMC Electronic Materials) since Aug 2012
Director, Corp. Suppliers Quality
MEMC Electronic Materials Sep 2011 - Aug 2012
Director of Quality - Solar Materials Business Units
MEMC Electronic Matierals, Inc. Feb 2010 - Aug 2011
Director of Technical Quality
MEMC Electronic Materials Jul 2003 - Jan 2010
Director - process and product engineering
MEMC Electronic Materials 2001 - 2003
Director of Manufacturing Technology
Education:
Clarkson University
Ph.D., Chemical Engineering

Business Records

Name / Title
Company / Classification
Phones & Addresses
Mohsen Banan
Manager
Memc Electronic Materials Inc
Semiconductors and Related Devices · Semiconductor Devices (Manufac
501 Pearl Dr #8, Saint Peters, MO 63376
(636) 474-5000, (636) 474-5576, (636) 474-5653, (636) 279-5000

Publications

Us Patents

Method For Preparing Molten Silicon Melt From Polycrystalline Silicon Charge

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US Patent:
6454851, Sep 24, 2002
Filed:
Nov 9, 2000
Appl. No.:
09/711198
Inventors:
Robert H. Fuerhoff - St. Charles MO
Mohsen Banan - Grover MO
John D. Holder - St. Louis MO
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
C30B 1526
US Classification:
117 15
Abstract:
A method and apparatus for preparing molten silicon melt from polycrystalline silicon in a crystal pulling apparatus entails loading an amount of polycrystalline silicon loaded into the crucible less than a predetermined total amount of polycrystalline silicon to be melted. The crucible is heated to form a partially melted charge in the crucible having an island of unmelted polycrystalline silicon exposed above an upper surface of melted silicon. Granular polycrystalline silicon is fed from a feeder onto the island of unmelted polycrystalline silicon until the predetermined total amount of polycrystalline silicon has been loaded into the crucible. The position of the island relative to the crucible side wall is electronically determined as granular polycrystalline silicon is fed onto the island. The feed rate at which granular polycrystalline silicon is fed from the feeder onto the island of unmelted polycrystalline silicon is controlled in response to the determined position of the island relative to the crucible side wall.

Crystal Puller For Growing Monocrystalline Silicon Ingots

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US Patent:
6554898, Apr 29, 2003
Filed:
Sep 25, 2002
Appl. No.:
10/254945
Inventors:
Zheng Lu - St. Charles MO
Mohsen Banan - Grover MO
Ying Tao - St. Peters MO
Lee Ferry - St. Charles MO
Carl F. Cherko - St. Charles MO
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
C30B 3500
US Classification:
117217, 117200, 117204, 117208
Abstract:
A crystal puller for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Heat Shield Assembly For Crystal Puller

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US Patent:
6579362, Jun 17, 2003
Filed:
Mar 23, 2001
Appl. No.:
09/815508
Inventors:
Lee W. Ferry - St. Charles MO
Richard G. Schrenker - Chesterfield MO
Mohsen Banan - Grover MO
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
C30B 1520
US Classification:
117208, 117213, 117217
Abstract:
A heat shield assembly for use in a crystal puller has an outer reflector interposed between the ingot and the crucible as the ingot is pulled from the molten source material. A cooling shield is interposed between the ingot and the outer reflector whereby the cooling shield is exposed to heat radiated from the ingot for increasing the rate at which the ingot is cooled, thereby increasing the axial temperature gradient of the ingot. In a further embodiment, an inner shield panel is disposed generally intermediate the cooling shield and the ingot in radially spaced relationship with the cooling shield and is constructed of a material substantially transparent to radiant heat from the ingot.

Silicon Wafers With Stabilized Oxygen Precipitate Nucleation Centers And Process For Making The Same

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US Patent:
6808781, Oct 26, 2004
Filed:
Dec 23, 2002
Appl. No.:
10/328481
Inventors:
Luciano MuleStagno - St. Louis MO
Jeffrey L. Libbert - OFallon MO
Richard J. Phillips - St. Peters MO
Milind Kulkarni - St. Louis MO
Mohsen Banan - Grover MO
Stephen J. Brunkhorst - Chesterfield MO
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
C30B 2906
US Classification:
428 641, 428446, 117 2, 117 3, 117932, 423348
Abstract:
A silicon wafer having a controlled oxygen precipitation behavior such that a denuded zone extending inward from the front surface and oxygen precipitates in the wafer bulk sufficient for intrinsic gettering purposes are ultimately formed. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing such as an epitaxial deposition process while maintaining the ability to dissolve any grown-in nucleation centers.

Low Defect Density Silicon Having A Vacancy-Dominated Core Substantially Free Of Oxidation Induced Stacking Faults

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US Patent:
6846539, Jan 25, 2005
Filed:
Jan 22, 2002
Appl. No.:
10/054629
Inventors:
Chang Bum Kim - St. Louis MO, US
Steven L. Kimbel - St. Charles MO, US
Jeffrey L. Libbert - O'Fallon MO, US
Mohsen Banan - Grover MO, US
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
C30B 2906
H01L 2906
US Classification:
428 641, 428446, 423348, 117928, 117932
Abstract:
The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G, and (iii) a cooling rate of the crystal from solidification to about 750 C. , in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterized in that v, Gand the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.

Method For The Production Of Low Defect Density Silicon

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US Patent:
6858307, Feb 22, 2005
Filed:
Oct 5, 2001
Appl. No.:
09/972608
Inventors:
Vladimir V. Vornokov - Merano, IT
Robert J. Falster - London, GB
Mohsen Banan - Grover MO, US
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
C30B033/02
C30B029/06
US Classification:
428446, 428397, 428401, 117928, 117932, 423348
Abstract:
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325 C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.

Seed Crystals For Pulling Single Crystal Silicon

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US Patent:
6866713, Mar 15, 2005
Filed:
Oct 28, 2002
Appl. No.:
10/281632
Inventors:
Hariprasad Sreedharamurthy - Ballwin MO, US
Mohsen Banan - Grover MO, US
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
C30B015/36
C30B015/00
US Classification:
117 13, 117 35, 117902, 117931, 117932
Abstract:
The present invention provides for a process for preparing a single crystal silicon ingot by the Czochralski method. The process comprises selecting a seed crystal for Czochralski growth wherein the seed crystal comprises vacancy dominated single crystal silicon.

Method For The Production Of Low Defect Density Silicon

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US Patent:
7105050, Sep 12, 2006
Filed:
Feb 16, 2005
Appl. No.:
11/058885
Inventors:
Vladimir V. Voronkov - Merano, IT
Robert J. Falster - London, GB
Mohsen Banan - Grover MO, US
Assignee:
MEMC Electronic Materials, Inc. - St. Peters MO
International Classification:
C30B 15/20
US Classification:
117 20, 117 13, 117 15, 117 19
Abstract:
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325 C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.

Isbn (Books And Publications)

Internetwork Mobility: The CDPD Approach

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Author

Mohsen Banan

ISBN #

0132096935

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Mohsen J Banan from Wildwood, MO, age ~64 Get Report