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Mohammad M Farahani

from Austin, TX
Age ~81
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Also known as:
Rossva M Farahani, Ross M Farahani, Mohammad A Farahane, Mohamma Farahani, D Farahani, Farahani Ross
Phone and address:
10006 Jupiter Hills Dr, Austin, TX 78747
(480) 686-3535
Related to:
Mariam I Farahani, 43Brian L Dickman, 48James W Farahani, 79Fatemeh Farahani, 77Porizach NajimiFarahani Lara, 45Miriam I FarahaniCyrus R Farahani, 46Jamshid W Farahani, 79Parizad Farahani, 60Zahra M Farahani, 73Tandees J Najimi, 28Mohammad J Najimi, 65Khosrow FarahaniLayla Corene Farahani, 31Cynthia G Farahani, 72
Connected to:
Carlo H Farahany, 89Elham Farahani, 46Farid Farahan, 78Marcia F Farahani, 39Maria E Farahani, 68Saeed G Farahani, 81Ahmad Farahat, 55Omar M Farahat, 28Sherif A Farahat, 59Bejan Farahbakhsh, 51

Mohammad Farahani Phones & Addresses

  • 10006 Jupiter Hills Dr, Austin, TX 78747 (480) 686-3535
  • Buda, TX
  • Phoenix, AZ
  • 2339 Megan St, Chandler, AZ 85224
  • Dallas, TX
  • Santa Ana, CA
  • Plano, TX
  • Maricopa, AZ
  • Galveston, TX

Resumes

Resumes

Mohammad Farahani Photo 1

Mohammad Farahani

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Education:
Azad University (Iau) 2014 - 2016
Masters, Telecommunications, Engineering
Skills:
Research Programming
Matlab
Microwave Transmission
Embedded Systems
Visual Tracking
Linux
Image Processing
C++
C
Mohammad Farahani Photo 2

Bachelor's Degree

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Work:
Bu-Ali Sina University
Bachelor's Degree
Education:
Bu - Ali Sina University
Mohammad Farahani Photo 3

Mohammad Farahani

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Mohammad Farahani Photo 4

Mohammad Farahani

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Mohammad Farahani Photo 5

Mohammad Farahani

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Publications

Us Patents

Stress Sensor For In-Situ Measurement Of Package-Induced Stress In Semiconductor Devices

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US Patent:
8174084, May 8, 2012
Filed:
Sep 19, 2006
Appl. No.:
11/523835
Inventors:
Mohammad M. Farahani - Chandler AZ, US
Vladimir Noveski - Chandler AZ, US
Neha M. Patel - Chandler AZ, US
Nachiket R. Raravikar - Chandler AZ, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 29/84
US Classification:
257417, 257 13, 257E21858, 257E23165, 438 48
Abstract:
A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.

Stress Sensor For In-Situ Measurement Of Package-Induced Stress In Semiconductor Devices

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US Patent:
8586393, Nov 19, 2013
Filed:
Apr 11, 2012
Appl. No.:
13/444786
Inventors:
Mohammad M. Farahani - Chandler AZ, US
Vladimir Noveski - Chandler AZ, US
Neha M. Patel - Chandler AZ, US
Nachiket R. Raravikar - Chandler AZ, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
438 48, 438503, 438680
Abstract:
A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.

Microelectronic Assembly Including Built-In Thermoelectric Cooler And Method Of Fabricating Same

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US Patent:
20060137732, Jun 29, 2006
Filed:
Dec 27, 2004
Appl. No.:
11/024357
Inventors:
Mohammad Farahani - Austin TX, US
Gregory Chrysler - Chandler AZ, US
Kris Frutschy - Phoenix AZ, US
International Classification:
H01L 37/00
H01L 35/30
H01L 35/34
US Classification:
136201000, 136205000
Abstract:
A method for fabricating a microelectronic assembly including a built-in TEC, a microelectronic assembly including a built-in TEC, and a system including the microelectronic assembly. The method includes providing a microelectronic device, and fabricating the TEC directly onto the microelectronic device such that there is no mounting material between the TEC and the microelectronic device.

Offset Solder Bump Method And Apparatus

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US Patent:
20060264021, Nov 23, 2006
Filed:
May 17, 2005
Appl. No.:
11/131828
Inventors:
Mohammad Farahani - Austin TX, US
Priyavadan Patel - Chandler AZ, US
Sriram Muthukumar - Chandler AZ, US
International Classification:
H01L 21/44
H01L 29/40
H01L 23/52
H01L 23/48
US Classification:
438612000, 257779000
Abstract:
An apparatus, method, and system for integrated circuit packaging having an offset solder bump are disclosed herein. A semiconductor substrate has a bond pad and a passivation layer located on an active surface thereof. A solder terminal contacts both the bond pad and passivation layer. A solder bump contacts the solder terminal and is positioned laterally offset from the bond pad.

Deflection Sensor For In-Situ Deflection Measurement In Semiconductor Devices

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US Patent:
20140013855, Jan 16, 2014
Filed:
Sep 19, 2013
Appl. No.:
14/031478
Inventors:
Mohammad M. FARAHANI - Austin TX, US
Vladimir Noveski - Chandler AZ, US
Neha M. Patel - Chandler AZ, US
Nachiket R. Raravikar - Gilbert AZ, US
International Classification:
H01L 21/66
US Classification:
73777, 257 48
Abstract:
A deflection sensor is disclosed herein. The deflection sensor includes a nanotube film adjacent to a substrate, and first and second contacts electrically connectable with the nanotube film. Methods of making and using the deflection sensor are also disclosed.

Elimination Of Voids At The Oxide/Silicon Interface In Trench-Based Structures

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US Patent:
6472270, Oct 29, 2002
Filed:
Mar 6, 2001
Appl. No.:
09/800249
Inventors:
Ross Hartshorn - Austin TX
Mohammad M. Farahani - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 21336
US Classification:
438257, 438424
Abstract:
Various methods of manufacturing, including oxide film manufacturing, are provided. In one aspect, a method of fabricating an oxide film is provided that includes forming a trench in a semiconductor substrate and exposing the substrate to an oxidizing atmosphere containing oxygen but substantially no chlorine. The substrate is heated to react a surface of the trench with the oxidizing atmosphere to form the oxide film thereon. Chlorine induced oxide-silicon interface voids may be eliminated.
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Mohammad M Farahani from Austin, TX, age ~81 Get Report